Impact of Substrate on Structure and Electrical Properties in Pb-based Ferroelectric Thin Films PDF Download
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Author: Nagarajan Valanoor
Publisher:
ISBN:
Category : Ferroelectric thin films
Languages : en
Pages : 246
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Book Description
Author: Nagarajan Valanoor
Publisher:
ISBN:
Category : Ferroelectric thin films
Languages : en
Pages : 246
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Book Description
Author: Carlos Paz de Araujo
Publisher: Taylor & Francis US
ISBN: 9782884491976
Category : Science
Languages : en
Pages : 598
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Book Description
The impetus for the rapid development of thin film technology, relative to that of bulk materials, is its application to a variety of microelectronic products. Many of the characteristics of thin film ferroelectric materials are utilized in the development of these products - namely, their nonvolatile memory and piezoelectric, pyroelectric, and electro-optic properties. It is befitting, therefore, that the first of a set of three complementary books with the general title Integrated Ferroelectric Devices and Technologies focuses on the synthesis of thin film ferroelectric materials and their basic properties. Because it is a basic introduction to the chemistry, materials science, processing, and physics of the materials from which integrated ferroelectrics are made, newcomers to this field as well as veterans will find this book self-contained and invaluable in acquiring the diverse elements requisite to success in their work in this area. It is directed at electronic engineers and physicists as well as process and system engineers, ceramicists, and chemists involved in the research, design, development, manufacturing, and utilization of thin film ferroelectric materials.
Author: R. W. Schwartz
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 610
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Book Description
This book, the eighth in a popular series from MRS, features the latest technical information on ferroelectric thin films from an international mix of academia, industry and government organizations. Recent results for DRAM and FERAM devices, as well as enhancements in material performance for these applications, are presented. Significant advances in understanding leakage current, frequency dependence of the coercive field, hydrogen annealing effects, piezoelectric constants, and domain switching responses are highlighted. The development of ferroelectric thin films for piezoelectric applications are also reviewed, as are improved film-fabrication procedures including chemical vapor deposition and chemical solution deposition. Topics include: BST thin films and DRAM; integration and electrodes; Bi-based thin-film ferroelectrics; Pb-based thin-film ferroelectrics; fundamental properties of thin-film ferroelectrics; ferroelectric gate materials and devices; and piezoelectric, pyro-electric and capacitor devices and novel processing strategies.
Author: Eugene Machlin
Publisher: Elsevier
ISBN: 0080460402
Category : Technology & Engineering
Languages : en
Pages : 268
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Book Description
The subject matter of thin-films – which play a key role in microelectronics – divides naturally into two headings: the processing / structure relationship, and the structure / properties relationship. Part II of 'Materials Science in Microelectronics' focuses on the latter of these relationships, examining the effect of structure on the following: •Electrical properties•Magnetic properties•Optical properties•Mechanical properties•Mass transport properties•Interface and junction properties•Defects and properties - Captures the importance of thin films to microelectronic development - Examines the cause / effect relationship of structure on thin film properties
Author: Jun Ouyang
Publisher: Elsevier
ISBN: 0128138572
Category : Technology & Engineering
Languages : en
Pages : 388
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Book Description
Nanostructures in Ferroelectric Films for Energy Applications: Grains, Domains, Interfaces and Engineering Methods presents methods of engineering nanostructures in ferroelectric films to improve their performance in energy harvesting and conversion and storage. Ferroelectric films, which have broad applications, including the emerging energy technology, usually consist of nanoscale inhomogeneities. For polycrystalline films, the size and distribution of nano-grains determines the macroscopic properties, especially the field-induced polarization response. For epitaxial films, the energy of internal long-range electric and elastic fields during their growth are minimized by formation of self-assembled nano-domains. This book is an accessible reference for both instructors in academia and R&D professionals. - Provides the necessary components for the systematic study of the structure-property relationship in ferroelectric thin film materials using case studies in energy applications - Written by leading experts in the research areas of piezoelectrics, electrocalorics, ferroelectric dielectrics (especially in capacitive energy storage), ferroelectric domains, and ferroelectric-Si technology - Includes a well balanced mix of theoretical design and simulation, materials processing and integration, and dedicated characterization methods of the involved nanostructures
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
The purpose of this research has been to demonstrate the possibility of integrating piezoelectric, dielectric and ferroelectric- lead and barium based oxide thin films and PVDF polymer on flexible metal substrates for microelectronic applications. Investigations on the key processing parameters and properties relationship for lead zirconate titanate (PZT, 52D 8) and barium zirconate titanate (BZT, 35D 5) based thin films on Cu foils were performed and studied. The impact of the oxygen partial pressure on the electrical properties of PZT and BZT thin films during processing has been explored, and demonstrated that high quality films and interfaces can be achieved through control of the pO2 within a window predicted by thermodynamic stability considerations. It should be noted that the high temperature processing of barium based ferroelectric oxides can be processed on Cu foils in a wider window of pO2 compared to that of processing lead based ferroelectric oxides. Also, the high volatile nature of lead makes the processing of lead based ferroelectric oxides difficult. Considering these issues, this work shows the processing technique undertaken to achieve high quality barium and lead based oxide thin films on Cu foils. The demonstration has broad implications, opening up the possibility of the use of low cost, high conductivity copper electrodes for a range of Pb-based and Ba-based perovskite materials, including PZT films in embedded printed circuit board applications for capacitors, varactors, and sensors; multilayer PZT piezoelectric stacks; and multilayer lead magnesium niobate-lead titanate-based dielectric and electrostrictive devices. In the case of ferroelectric PZT films on Cu foil, the capacitors do not fatigue upon repeated switching like those with Pt noble metal electrodes. Instead they appear to be fatigue-resistant like ferroelectric capacitors with oxide electrodes. This may have implications for ferroelectric nonvolatile memories. The eff.
Author:
Publisher:
ISBN:
Category : Ferroelectric thin films
Languages : en
Pages : 746
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Book Description
Author: Seshu B. Desu
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 480
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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Author: Uwe Schroeder
Publisher: Woodhead Publishing
ISBN: 0081024312
Category : Technology & Engineering
Languages : en
Pages : 572
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Book Description
Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are also extensively discussed in the book, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more. Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HFO2 and standard ferroelectric materials. Finally, HfO2 based devices are summarized. - Explores all aspects of the structural and electrical properties of HfO2, including processes, modelling and implementation into semiconductor devices - Considers potential applications including FeCaps, FeFETs, NCFETs, FTJs and more - Provides comparison of an emerging ferroelectric material to conventional ferroelectric materials with insights to the problems of downscaling that conventional ferroelectrics face
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 20
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Book Description
For PZT films deposited on Pt coated substrates, remanent polarization is a monotonic function of thermal expansion of the substrate, a result of 90° domain formation occurring as the film is cooled through the transformation temperature. PZT film stress in the vicinity of the Curie point controls 90° domain assemblages within the film. PZT films under tension at the transformation temperature area-domain oriented; whereas, films under compression at the transformation temperature are c-domain oriented. From XRD electrical switching of 90° domains is severely limited. Thus, formation of these 90° domains in vicinity of the Curie point is dominant in determination of PZT film dielectric properties. Chemically prepared PZT thin films with random crystallite orientation, but preferential a-domain orientation, have low remanent polarization (24 [mu]C/cm2) and high dielectric constant (1000). Conversely, PZT films of similar crystalline orientation, but of preferential c-domain orientation, have large remanent polarizations (37 [mu]C/cm2) and low dielectric constants (700). This is consistent with single-crystal properties of tetragonally distorted, simple perovksite ferroelectrics. Further, for our films that grain size - 90° domain relationships appear similar to those in the bulk. The effect of grain size on 90° domain formation and electrical properties are discussed.
