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Author: FERRY
Publisher: IOP Publishing Limited
ISBN: 9780750339452
Category : Technology & Engineering
Languages : en
Pages : 350
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Book Description
This research and reference text provides up-to-date coverage of the latest research on hot carriers in semiconductors, with a focus on the background, theoretical approaches, measurements and physical understanding required to engage with the field. Pitched at an introductory level, it equips researchers transitioning from optics to fully understand the role of hot carriers in semiconductors, and is a core text for graduate courses in hot carrier phenomena.
Author: FERRY
Publisher: IOP Publishing Limited
ISBN: 9780750339452
Category : Technology & Engineering
Languages : en
Pages : 350
Get Book Here
Book Description
This research and reference text provides up-to-date coverage of the latest research on hot carriers in semiconductors, with a focus on the background, theoretical approaches, measurements and physical understanding required to engage with the field. Pitched at an introductory level, it equips researchers transitioning from optics to fully understand the role of hot carriers in semiconductors, and is a core text for graduate courses in hot carrier phenomena.
Author: Karl Hess
Publisher: Springer
ISBN: 9781461380351
Category : Science
Languages : en
Pages : 0
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Book Description
This volume contains invited and contributed papers of the Ninth International Conference on Hot Carriers in Semiconductors (HCIS-9), held July 3 I-August 4, 1995 in Chicago, Illinois. In all, the conference featured 15 invited oral presentations, 60 contributed oral presentations, and 105 poster presentations, and an international contingent of 170 scientists. As in recent conferences, the main themes of the conference were related to nonlinear transport in semiconductor heterojunctions and included Bloch oscillations, laser diode structures, and femtosecond spectroscopy. Interesting questions related to nonlinear transport, size quantization, and intersubband scattering were addressed that are relevant to the new quantum cascade laser. Many lectures were geared toward quantum wires and dots and toward nanostructures and mesoscopic systems in general. It is expected that such research will open new horizons to nonlinear transport studies. An attempt was made by the program committee to increase the number of presen tations related directly to devices. The richness of nonlocal hot electron effects that were discussed as a result, in our opinion, suggests that future conferences should further encourage reports on such device research. On behalf of the Program and International Advisory Committees, we thank the participants, who made the conference a successful and pleasant experience, and the support of the Army Research Office, the Office of Naval Research, and the Beckman Institute of the University of Illinois at Urbana-Champaign. We are also indebted to Mrs. Sara Starkey and Mrs.
Author: L. Reggiani
Publisher: Springer Science & Business Media
ISBN: 3540388494
Category : Technology & Engineering
Languages : en
Pages : 288
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Book Description
Hot-Electron Transport in Semiconductors (Topics in Applied Physics).
Author: Chin Sen Ting
Publisher: World Scientific
ISBN: 9789810210083
Category : Science
Languages : en
Pages : 336
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Book Description
This review volume is based primarily on the balance equation approach developed since 1984. It provides a simple and analytical description about hot electron transport, particularly, in semiconductors with higher carrier density where the carrier-carrier collision is much stronger than the single particle scattering. The steady state and time-dependent hot electron transport, thermal noise, hot phonon effect, the memory effect, and other related subjects of charge carriers under strong electric fields are reviewed. The application of Zubarev's nonequilibrium statistical operator to hot electron transport and its equivalence to the balance equation method are also presented. For semiconductors with very low carrier density, the problem can be regarded as a single carrier transport which will be treated non-perturbatively by the nonequilibrium Green's function technique and the path integral theory. The last part of this book consists of a chapter on the dynamic conductivity and the shot noise suppression of a double-carrier resonant tunneling system.
Author: Karl Hess
Publisher: Springer Science & Business Media
ISBN: 1461304016
Category : Science
Languages : en
Pages : 575
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Book Description
This volume contains invited and contributed papers of the Ninth International Conference on Hot Carriers in Semiconductors (HCIS-9), held July 3 I-August 4, 1995 in Chicago, Illinois. In all, the conference featured 15 invited oral presentations, 60 contributed oral presentations, and 105 poster presentations, and an international contingent of 170 scientists. As in recent conferences, the main themes of the conference were related to nonlinear transport in semiconductor heterojunctions and included Bloch oscillations, laser diode structures, and femtosecond spectroscopy. Interesting questions related to nonlinear transport, size quantization, and intersubband scattering were addressed that are relevant to the new quantum cascade laser. Many lectures were geared toward quantum wires and dots and toward nanostructures and mesoscopic systems in general. It is expected that such research will open new horizons to nonlinear transport studies. An attempt was made by the program committee to increase the number of presen tations related directly to devices. The richness of nonlocal hot electron effects that were discussed as a result, in our opinion, suggests that future conferences should further encourage reports on such device research. On behalf of the Program and International Advisory Committees, we thank the participants, who made the conference a successful and pleasant experience, and the support of the Army Research Office, the Office of Naval Research, and the Beckman Institute of the University of Illinois at Urbana-Champaign. We are also indebted to Mrs. Sara Starkey and Mrs.
Author: J. Shah
Publisher: Elsevier
ISBN: 148328686X
Category : Technology & Engineering
Languages : en
Pages : 532
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Book Description
A comprehensive account of the latest developments in the rapidly expanding area of Semiconductor Technology. Main topics covered include real space transfer/heterostructures, ultrafast studies, optical studies, transport theory, devices, ballistic transport, scattering processes and hot phonons, tunnelling, far infrared and magnetic field studies and impact ionization/noise/chaos. Other aspects include the use of femtosecond lasers in investigating transient hot carrier effects on femtosecond timescales, magnetotransport and carrier-carrier interactions.
Author: Jagdeep Shah
Publisher: Elsevier
ISBN: 0080925707
Category : Science
Languages : en
Pages : 525
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Book Description
Nonequilibrium hot charge carriers play a crucial role in the physics and technology of semiconductor nanostructure devices. This book, one of the first on the topic, discusses fundamental aspects of hot carriers in quasi-two-dimensional systems and the impact of these carriers on semiconductor devices. The work will provide scientists and device engineers with an authoritative review of the most exciting recent developments in this rapidly moving field. It should be read by all those who wish to learn the fundamentals of contemporary ultra-small, ultra-fast semiconductor devices. - Topics covered include - Reduced dimensionality and quantum wells - Carrier-phonon interactions and hot phonons - Femtosecond optical studies of hot carrier - Ballistic transport - Submicron and resonant tunneling devices
Author: Juras Pozela
Publisher: Springer Science & Business Media
ISBN: 1489912428
Category : Science
Languages : en
Pages : 351
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Book Description
This book examines the physical principles behind the operation of high-speed transistors operating at frequencies above 10 GHz and having switching times less than 100 psec. If the 1970s cannot be remembered for the opportunities for creating and extensively using transistors operating at such high speeds, then, the situation has changed radically because of rapid progress in sub micrometer technology for manufacturing transistors and integrated circuits from GaAs and other semiconductor materials and the powerful influx of new physical concepts. Not only have transistors having switching speeds of 50-100 psec operating in the 10-20 GHz region been created in recent years, but the possibilities for manufacturing transistors operating one to two orders of magnitude faster have been revealed. As superhigh-speed transistors have been created, many of the most important areas of technology such as communications, computing technology, television, radar, and the manufacture of scientific, industrial, and medical equipment have qualitatively changed. Microwave transistors operating at millimeter wavelengths make it possible to produce compact and highly efficient equipment for communications and radar technology. Transistors with switching speeds better than 10-100 psec make it possible to increase the speed of microprocessors and other computer components to tens of billions of operations per second and thereby solve one of the most pressing problems of modern electronics - increasing the speed of digital information processing.
Author: David K. Ferry
Publisher: Springer Science & Business Media
ISBN: 1468436384
Category : Technology & Engineering
Languages : en
Pages : 620
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Book Description
The area of high field transport in semiconductors has been of interest since the early studies of dielectric breakdown in various materials. It really emerged as a sub-discipline of semiconductor physics in the early 1960's, following the discovery of substantial deviations from Ohm's law at high electric fields. Since that time, it has become a major area of importance in solid state electronics as semiconductor devices have operated at higher frequencies and higher powers. It has become apparent since the Modena Conference on Hot Electrons in 1973, that the area of hot electrons has ex tended weIl beyond the concept of semi-classical electrons (or holes) in homogeneous semiconductor materials. This was exemplified by the broad range of papers presented at the International Conference on Hot Electrons in Semiconductors, held in Denton, Texas, in 1977. Hot electron physics has progressed from a limited phenomeno logical science to a full-fledged experimental and precision theo retical science. The conceptual base and subsequent applications have been widened and underpinned by the development of ab initio nonlinear quantum transport theory which complements and identifies the limitations of the traditional semi-classical Boltzmann-Bloch picture. Such diverse areas as large polarons, pico-second laser excitation, quantum magneto-transport, sub-three dimensional systems, and of course device dynamics all have been shown to be strongly interactive with more classical hot electron pictures.
Author: Hiroshi Miyasaka
Publisher: Springer Nature
ISBN: 981155451X
Category : Science
Languages : en
Pages : 586
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Book Description
This book compiles the accomplishments of the recent research project on photochemistry “Photosynergetics”, supported by the Ministry of Education, Culture, Sports, Science and Technology of Japan, aiming to develop and elucidate new methods and molecules leading to advanced utilization of photo-energies. Topics include photochemical responses induced by multiple excitation, multiphoton absorption, strong modulation of electronic states, developments of new photofunctional molecules, mesoscopic actuations induced by photoexcitation, and novel photoresponses in molecules and molecular assemblies. The authors stress that these approaches based on the synergetic interaction among many photons and many molecules enable the expansion of the accessibility to specific electronic states. As well, they explain how the development of reaction sequences and molecules/molecular assemblies ensure “additivity” and “integration” without loss of the photon energy, leading to new photoresponsive assemblies in meso- and macroscopic scales.
