Author: Jone Fang Chen
Publisher:
ISBN:
Category :
Languages : en
Pages : 242

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Author: Yusuf Leblebici
Publisher: Springer Science & Business Media
ISBN: 1461532507
Category : Technology & Engineering
Languages : en
Pages : 223

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Book Description
As the complexity and the density of VLSI chips increase with shrinking design rules, the evaluation of long-term reliability of MOS VLSI circuits is becoming an important problem. The assessment and improvement of reliability on the circuit level should be based on both the failure mode analysis and the basic understanding of the physical failure mechanisms observed in integrated circuits. Hot-carrier induced degrada tion of MOS transistor characteristics is one of the primary mechanisms affecting the long-term reliability of MOS VLSI circuits. It is likely to become even more important in future generation chips, since the down ward scaling of transistor dimensions without proportional scaling of the operating voltage aggravates this problem. A thorough understanding of the physical mechanisms leading to hot-carrier related degradation of MOS transistors is a prerequisite for accurate circuit reliability evaluation. It is also being recognized that important reliability concerns other than the post-manufacture reliability qualification need to be addressed rigorously early in the design phase. The development and use of accurate reliability simulation tools are therefore crucial for early assessment and improvement of circuit reliability : Once the long-term reliability of the circuit is estimated through simulation, the results can be compared with predetermined reliability specifications or limits. If the predicted reliability does not satisfy the requirements, appropriate design modifications may be carried out to improve the resistance of the devices to degradation.

Author: Wenjie Jiang
Publisher:
ISBN:
Category :
Languages : en
Pages : 218

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Author: Khandker Nazrul Quader
Publisher:
ISBN:
Category :
Languages : en
Pages : 368

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Author: Cheng Wang
Publisher: Springer Science & Business Media
ISBN: 1468485474
Category : Science
Languages : en
Pages : 345

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Book Description
As device dimensions decrease, hot-carrier effects, which are due mainly to the presence of a high electric field inside the device, are becoming a major design concern. On the one hand, the detrimental effects-such as transconductance degradation and threshold shift-need to be minimized or, if possible, avoided altogether. On the other hand, performance such as the programming efficiency of nonvolatile memories or the carrier velocity inside the devices-need to be maintained or improved through the use of submicron technologies, even in the presence of a reduced power supply. As a result, one of the major challenges facing MOS design engineers today is to harness the hot-carrier effects so that, without sacrificing product performance, degradation can be kept to a minimum and a reli able design obtained. To accomplish this, the physical mechanisms re sponsible for the degradations should first be experimentally identified and characterized. With adequate models thus obtained, steps can be taken to optimize the design, so that an adequate level of quality assur ance in device or circuit performance can be achieved. This book ad dresses these hot-carrier design issues for MOS devices and circuits, and is used primarily as a professional guide for process development engi neers, device engineers, and circuit designers who are interested in the latest developments in hot-carrier degradation modeling and hot-carrier reliability design techniques. It may also be considered as a reference book for graduate students who have some research interests in this excit ing, yet sometime controversial, field.

Author: Vei-Han Chan
Publisher:
ISBN:
Category :
Languages : en
Pages : 148

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Author: Tibor Grasser
Publisher: Springer
ISBN: 3319089943
Category : Technology & Engineering
Languages : en
Pages : 518

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Book Description
This book provides readers with a variety of tools to address the challenges posed by hot carrier degradation, one of today’s most complicated reliability issues in semiconductor devices. Coverage includes an explanation of carrier transport within devices and book-keeping of how they acquire energy (“become hot”), interaction of an ensemble of colder and hotter carriers with defect precursors, which eventually leads to the creation of a defect, and a description of how these defects interact with the device, degrading its performance.

Author: Elie Maricau
Publisher: Springer Science & Business Media
ISBN: 1461461634
Category : Technology & Engineering
Languages : en
Pages : 208

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Book Description
This book focuses on modeling, simulation and analysis of analog circuit aging. First, all important nanometer CMOS physical effects resulting in circuit unreliability are reviewed. Then, transistor aging compact models for circuit simulation are discussed and several methods for efficient circuit reliability simulation are explained and compared. Ultimately, the impact of transistor aging on analog circuits is studied. Aging-resilient and aging-immune circuits are identified and the impact of technology scaling is discussed. The models and simulation techniques described in the book are intended as an aid for device engineers, circuit designers and the EDA community to understand and to mitigate the impact of aging effects on nanometer CMOS ICs.

Author: Eiji Takeda
Publisher: Elsevier
ISBN: 0080926223
Category : Technology & Engineering
Languages : en
Pages : 329

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Book Description
The exploding number of uses for ultrafast, ultrasmall integrated circuits has increased the importance of hot-carrier effects in manufacturing as well as for other technological applications. They are rapidly movingout of the research lab and into the real world. This book is derived from Dr. Takedas book in Japanese, Hot-Carrier Effects, (published in 1987 by Nikkei Business Publishers). However, the new book is much more than a translation. Takedas original work was a starting point for developing this much more complete and fundamental text on this increasingly important topic. The new work encompasses not only all the latest research and discoveries made in the fast-paced area of hot carriers, but also includes the basics of MOS devices, and the practical considerations related to hot carriers. Chapter one itself is a comprehensive review of MOS device physics which allows a reader with little background in MOS devices to pick up a sufficient amount of information to be able to follow the rest of the book The book is written to allow the reader to learn about MOS Device Reliability in a relatively short amount of time, making the texts detailed treatment of hot-carrier effects especially useful and instructive to both researchers and others with varyingamounts of experience in the field The logical organization of the book begins by discussing known principles, then progresses to empirical information and, finally, to practical solutions Provides the most complete review of device degradation mechanisms as well as drain engineering methods Contains the most extensive reference list on the subject

Author: Gürsel Düzenli
Publisher:
ISBN:
Category :
Languages : en
Pages :

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Book Description
The down-scaling of device dimensions in CMOS technology will improve performance and packing density for VLSI (Very Large Scale Integration) circuits, but it will negatively effect the quaIity of the circuits. Integrated circuits (ICs) are basically classified according to the electrical function they perform. Integrated circuits performing nominally the same function, however, do not necessarily perform it equally well. The concept of quality is used to express how well the required function is performed. An operational amplifier is of higher quality İf it has a higher gain, wider frequency bandwidth, etc. These characteristics can be regarded as conformance figures. The conformance is, however, only one side of the quality. On the other side is the issue of how Iong the device or circuit will exhibit the initial performance figures. The concept of reliabillty is used to express this time dimension of the quality . Measurement and presentation of the conformance figures are straightforward; any conformance parameter can be measured directly and its value expressed. The situation is, however, different from determination and presentation of the reliability. The reliabilİty depends, in principle, on application conditions, which means it is not possible to establish an exact and unique reliability figure for a given device or IC. In addition, the reliability, determination itself, regardless of the application conditions used, cannot be made by direct measurements. This is mainly because of practical constraints. Theoretically, it is possible to determine the mean time to failure directly if a corresponding number of device or ICs are exposed to working conditions and times to failure of each of them are recorded. This is, however, practically meaningless; such a test would last for tens of years, and by the time the data are collected nobody would be interested in them. That is why accelerated tests have to be applied to obtain the results in a reasonable time of 1 or 2 months. The failures in ICs can be classified in at least three different ways: according to failure modes, according to failure mechanisms, and according to failure causes. The failure mode is the observed result of a failure, such as an open circuit, short circuit, or parameter degradation. The failure mechanism is the phyical, chemical, or other process that results in a failure. Finally , the failure cause is a circumstance during design, production, testing, or operation that initates or contributes to a failure mechanism. The focus of this study is the modeling of parameter degradation reliability of p- MOS and n-MOS transistors due to the hot-carriers under analog operation. Hot- carrier failure cause can initiate the electron/holetrapping/generation and/or interface trap creation mechanism leading to changes of oxide charge and trap densities during device operation. A lot of efforts have been devoted to study the mechanisms due to the hot-carrier and modeling the device degradation due to these effects. However , these modelings are often performed on digital applications. Analog applications differ from digital ones by a number of points. Analog circuit reliability prediction has to take analog circuit design variables such as channel length, biasing conditions, and circuit topography into consideration. In order to achieve highest possible speed, smallest area and smallest power consumption usually L=Lmin are chosen for digital applications. However, for nearly all-analog applications this choice is inadequate. In order to improve matching and noise behavior, channel lengths usually need to be chosen several times Lmin. For those greater lengths also the small-signal parameters especially the drain conductance, are largely improved. However, because analog circuits usually use long-channel devices, the influence of hot-carrier effects on analog circuit performance has been believed to be minimal and, as a result, has been mostly overlooked. Therefore, the most important device parameters in these two application fields do not coincide. For example, power supply scaling for analog circuİts will not likely be as aggressive as for digital circuits, because submicron devices are necessary for high speed applications. However , the operation of analog circuits is sensitive to device parameter variations. Furthermore, device parameter variations depend on the specific application of a given analog circuit. The proposed models combines the advantages of the parameter fitting method and so-called AId model. The essence of the model is the translation of the physical W,mechanisms leading to degradation into the MOSFET model equations correct place via an empirical description. Because of the correct place of the empirical description in the MOSFET model equations the parameter extraction will be as simple as that of the so-called LlIo model. The empirical description was found from different degradations and fresh devices, so the accuracy is as high as that of the parameter fitting method. Furthermore, the general structure of the empirical description is independent of the process technology. Therefore, it does not impose a much higher requirement on device engineer . Another important feature of the proposed models is the prediction of the device lifetime at real life. This is an important feature because most of the developed degradation models are not able to predict the device lifetime. Therefore, several extrapolation laws to calculate the Iifetime have been developed. But, most of the developed lifetime prediction models are developed for digital applications. However, when the same lifetime prediction models are applied to analog applications, gross lifetime prediction error results. This is because the stress conditions are totally different in analog applications compared to digital applications. The proposed model includes a hot-carrier degradation model and a lifetime prediction model as a single model suitable for analog applications. The accuracy of the presented models has been verified with experimental data.