Hot-carrier Reliability of Bipolar Transistors and Circuits

Hot-carrier Reliability of Bipolar Transistors and Circuits PDF Author: James David Burnett
Publisher:
ISBN:
Category :
Languages : en
Pages : 288

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Hot-carrier Reliability of Bipolar Transistors and Circuits

Hot-carrier Reliability of Bipolar Transistors and Circuits PDF Author: James David Burnett
Publisher:
ISBN:
Category :
Languages : en
Pages : 288

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Book Description


Hot-carrier Reliability of Bipolar Transistors and Circuits

Hot-carrier Reliability of Bipolar Transistors and Circuits PDF Author: Burnett James
Publisher:
ISBN:
Category :
Languages : en
Pages : 316

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Hot-Carrier Reliability of MOS VLSI Circuits

Hot-Carrier Reliability of MOS VLSI Circuits PDF Author: Yusuf Leblebici
Publisher: Springer Science & Business Media
ISBN: 1461532507
Category : Technology & Engineering
Languages : en
Pages : 223

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Book Description
As the complexity and the density of VLSI chips increase with shrinking design rules, the evaluation of long-term reliability of MOS VLSI circuits is becoming an important problem. The assessment and improvement of reliability on the circuit level should be based on both the failure mode analysis and the basic understanding of the physical failure mechanisms observed in integrated circuits. Hot-carrier induced degrada tion of MOS transistor characteristics is one of the primary mechanisms affecting the long-term reliability of MOS VLSI circuits. It is likely to become even more important in future generation chips, since the down ward scaling of transistor dimensions without proportional scaling of the operating voltage aggravates this problem. A thorough understanding of the physical mechanisms leading to hot-carrier related degradation of MOS transistors is a prerequisite for accurate circuit reliability evaluation. It is also being recognized that important reliability concerns other than the post-manufacture reliability qualification need to be addressed rigorously early in the design phase. The development and use of accurate reliability simulation tools are therefore crucial for early assessment and improvement of circuit reliability : Once the long-term reliability of the circuit is estimated through simulation, the results can be compared with predetermined reliability specifications or limits. If the predicted reliability does not satisfy the requirements, appropriate design modifications may be carried out to improve the resistance of the devices to degradation.

Hot Carrier Degradation in Semiconductor Devices

Hot Carrier Degradation in Semiconductor Devices PDF Author: Tibor Grasser
Publisher: Springer
ISBN: 3319089943
Category : Technology & Engineering
Languages : en
Pages : 518

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Book Description
This book provides readers with a variety of tools to address the challenges posed by hot carrier degradation, one of today’s most complicated reliability issues in semiconductor devices. Coverage includes an explanation of carrier transport within devices and book-keeping of how they acquire energy (“become hot”), interaction of an ensemble of colder and hotter carriers with defect precursors, which eventually leads to the creation of a defect, and a description of how these defects interact with the device, degrading its performance.

Oxide Reliability

Oxide Reliability PDF Author: D. J. Dumin
Publisher: World Scientific
ISBN: 9789810248420
Category : Technology & Engineering
Languages : en
Pages : 292

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Book Description
Presents in summary the state of our knowledge of oxide reliability.

Hot-carrier Reliability of Integrated Circuits

Hot-carrier Reliability of Integrated Circuits PDF Author: Khandker Nazrul Quader
Publisher:
ISBN:
Category :
Languages : en
Pages : 368

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Hot Carrier Effects in self-aligned bipolar transistors

Hot Carrier Effects in self-aligned bipolar transistors PDF Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :

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High-Frequency Bipolar Transistors

High-Frequency Bipolar Transistors PDF Author: Michael Reisch
Publisher: Springer Science & Business Media
ISBN: 364255900X
Category : Technology & Engineering
Languages : en
Pages : 671

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Book Description
This modern book-length treatment gives a detailed presentation of high-frequency bipolar transistors in silicon or silicon-germanium technology, with particular emphasis placed on today's advanced compact models and their physical foundations.

Hot-Carrier Effects in MOS Devices

Hot-Carrier Effects in MOS Devices PDF Author: Eiji Takeda
Publisher: Academic Press
ISBN: 0126822409
Category : Juvenile Nonfiction
Languages : en
Pages : 329

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Book Description
The exploding number of uses for ultrafast, ultrasmall integrated circuits has increased the importance of hot-carrier effects in manufacturing as well as for other technological applications. They are rapidly movingout of the research lab and into the real world. This book is derived from Dr. Takedas book in Japanese, Hot-Carrier Effects, (published in 1987 by Nikkei Business Publishers). However, the new book is much more than a translation. Takedas original work was a starting point for developing this much more complete and fundamental text on this increasingly important topic. The new work encompasses not only all the latest research and discoveries made in the fast-paced area of hot carriers, but also includes the basics of MOS devices, and the practical considerations related to hot carriers. Chapter one itself is a comprehensive review of MOS device physics which allows a reader with little background in MOS devices to pick up a sufficient amount of information to be able to follow the rest of the book The book is written to allow the reader to learn about MOS Device Reliability in a relatively short amount of time, making the texts detailed treatment of hot-carrier effects especially useful and instructive to both researchers and others with varyingamounts of experience in the field The logical organization of the book begins by discussing known principles, then progresses to empirical information and, finally, to practical solutions Provides the most complete review of device degradation mechanisms as well as drain engineering methods Contains the most extensive reference list on the subject

Reliability of Silicon Bipolar Junction Transistors in Integrated Circuits

Reliability of Silicon Bipolar Junction Transistors in Integrated Circuits PDF Author: Michael S. Carroll
Publisher:
ISBN:
Category :
Languages : en
Pages : 506

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Book Description
The reliability of silicon bipolar junction transistors in integrated circuits is investigated. The decrease in the common-emitter current during bipolar transistor operation in BiCMOS circuits is analyzed and modeled. The current gain degradation during reverse-bias stress of the emitter-base junction is found to be the result of interface trap generation at the oxide/silicon interface and charging of the oxide layer near the emitter-base junction perimeter by energetic electrons and holes to increase the base current. A model for interface trap generation based on the rupture of weak impurity bonds by hot carriers is presented to explain the meaured kinetics of the increase in interface trap density. A surface electron channel after heavy reverse-bias stress is shown to exist over the quasi-neutral base from positive oxide charging. The stress voltage thresholds for positive oxide charging are also measured and analyzed. Accelerated reverse emitter-bias stress methodologies are presented which allow for more rapid and accurate determination of bipolar transistor time-to-failure at low power supply voltages. Hot holes are found to be the primary cause of interface trap generation for low stress voltages. Significant transistor degradation is measured for stress voltages as low as 2.5V, indicating bipolar transistor reliability will remain an important concern in the future. The base current relaxation transient following reverse emitter-base bias stress is analyzed and attributed to a decrease of trapped positive charge in the oxide layer near the emitter-base junction perimeter. The trapped holes in the oxide are modeled to tunnel from oxide traps to the silicon valence band during base current relaxation. The relaxation transient is found to occur after a certain delay time. The effects of Ib relaxation are also found to decrease at low stress voltages. The bipolar transistor reliability during operation at high current densities in the forward-active mode is investigated. an increase in the current gain is found at moderate forward emitter-base bias, and this phenomenon is attributed to the passivation of polysilicon/.crystalline-silicon interface traps in the emitter by atomic hydrogen. A model is presented which explains the measured results in both n/p/n and p/n/p transistors.