High Temperature Studies of Thin Film Aluminum Nitride and Piezoelectric Characterization of Mesa Structures PDF Download
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Author:
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Category : Microelectromechanical systems
Languages : en
Pages :
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Author:
Publisher:
ISBN:
Category : Microelectromechanical systems
Languages : en
Pages :
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Book Description
Author:
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Category :
Languages : en
Pages :
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A Rapid Thermal Annealing (RTA) system was used to anneal sputtered and MOVPE grown Aluminum Nitride (AlN) thin films at temperatures up to 1000°C in ambient and controlled environments. According to Energy Dispersive X-Ray Analysis (EDAX), the films annealed in an ambient environment rapidly oxidize after five minutes at 1000°C. Below 1000°C the films oxidized linearly as a function of annealing temperature which is consistent with what has been reported in literature [1]. Laser Doppler Vibrometry (LDV) was used to measure the piezoelectric coefficient, d33, of these films. Films annealed in an ambient environment had a weak piezoelectric response indicating that oxidation on the surface of the film reduces the value of d33. A high temperature furnace has been built that is capable of taking in-situ measurements of the piezoelectric response of AlN films. In-situ d33 measurements are recorded up to 300°C for both sputtered and MOVPE-grown AlN thin films. The measured piezoelectric response appears to increase with temperature up to 300°C possibly due to stress in the film.
Author: Srikar Vengallatore
Publisher: Cambridge University Press
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 272
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Microelectromechanical systems (MEMS) have transitioned from a technology niche to a role of major industrial significance. The worldwide market for MEMS is now approximately $10 billion, and the total value of systems enabled by MEMS is several orders of magnitude higher than this figure. As the market has grown, the material and process sets have broadened and departed from their semiconductor roots. In addition to engineering materials, there is now great interest in integrating multifunctional nanomaterials, smart materials and biomaterials within MEMS/NEMS to enhance functionality, performance and reliability. The opportunities created by this integration have generated a vibrant research community working on new materials and processes. This book reflects the breadth of topics currently under investigation in the field. Novel materials and accompanying processes are discussed, as are more conventional materials and processes. Consistent themes are the need for accurate material property assessment at the relevant length scales and for suitable metrology tools to support the introduction of new materials.
Author: Rajan Sharad Naik
Publisher:
ISBN:
Category :
Languages : en
Pages : 14
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Author: Gustavo Sanchez Mathon
Publisher:
ISBN:
Category :
Languages : en
Pages : 432
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Polycrystalline aluminum nitride thin films were produced with a microwave-plasma enhanced chemical vapor deposition technique. The plasma-injector distance, the substrate temperature and the RF bias were the main variables which allowed achieving this objective. At the time, it was possible to control the preferential orientation as 0001 or 1010, both interesting for piezoelectric applications. The growth mechanisms that conducted to film microstructure development under different process conditions were explained, enriched by the comparison with a physical vapor deposition sputtering technique. The obtained films were characterized in their piezoelectric performance, including the construction of surface acoustic wave devices and bulk acoustic wave devices. Adequate piezoelectric response and acoustic velocities were obtained for 0001 oriented films, while 1010 oriented films did not show piezoelectric response under the configurations essayed. An extensive analysis was done in order to explain these behaviors.
Author: Yvonne Afriyie
Publisher:
ISBN:
Category : Electronic dissertations
Languages : en
Pages : 66
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Aluminum is an ideal metal for solution-processed oxide dielectrics because it can form polymerized hydroxo networks in aqueous solution and dense amorphous oxide dielectrics by vacuum methods. Atomic layer deposition (ALD) is one of the traditional vacuum methods for thin film deposition, however, ALD is not the most economically feasible method for thin film fabrication due to high operational cost and limitations in large surface-area applications. Solution deposition is a more economical deposition method which is more cost-saving and ideal for large surface area thin film fabrication. The behavior of the solution-solid structural conversion remains an enigma; thus, this research seeks to understand the structural transformation of thin films from solution to solid in order to fabricate films with optimal properties.Aluminum oxide (AlxOy) thin films prepared from aqueous solution-deposited cluster precursors have been proposed for use in devices such as high-k dielectrics in solar cell materials. The films are fabricated with different aluminum-derived precursors, spin-coated on a substrate and annealed at a range of temperatures. The low temperature range of these films are amorphous, therefore lack long range order. Solid-state nuclear magnetic resonance (ssNMR) can be used to determine the amorphous structure of these materials. Herein, a combination of X-ray diffraction (XRD), and NMR techniques are used to elucidate the transformation of these thin films as they are annealed to high temperatures.
Author: Cynthia Kornegay Waters
Publisher:
ISBN:
Category : Aluminum nitride
Languages : en
Pages : 336
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Investigates the hardnesses, elastic moduli, and fracture mechanic properties of aluminum nitride and titanium nitride thin film multilayers when deposited in various thicknesses on silicon. Utilized pulsed laser deposition to grow the thin films.
Author: Agne Zukauskaite
Publisher: Mdpi AG
ISBN: 9783036563671
Category : Science
Languages : en
Pages : 0
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Book Description
Recently, aluminium scandium nitride (AlScN) emerged as a material with superior properties compared to aluminium nitride (AlN). Substituting Al with Sc in AlN leads to a dramatic increase in the piezoelectric coefficient as well as in electromechanical coupling. This discovery finally allowed us to overcome the limitations of AlN thin films in various piezoelectric applications while still enabling us to benefit from all of the advantages of the parent material system, such as a high temperature stability, CMOS compatibility, and good mechanical properties. Potential applications include RF filters (bulk acoustic wave (BAW) or surface acoustic wave (SAW) resonators), energy harvesting, sensing applications, and infra-red detectors. The recent progress in MOCVD- and MBE-grown AlScN has led to high-frequency and -power electronics, (high-electron-mobility transistors (HEMTs)). AlScN is the first wurtzite III-nitride where ferroelectric switching was observed, allowing for many new possible applications in semiconductor memories additionally, it enables the additional functionality of switching to applications where piezoelectric materials are already in use. This Special Issue was very successful in covering all of the main aspects of AlScN research, including its growth, the fundamental and application-relevant properties, and device fabrication and characterization. We can see that AlScN technology is mature enough to be utilized in wafer-level material development and complicated devices, but there is still much to discover in terms of deposition process control, anisotropy, and, in particular, ferroelectric behavior.
Author: Katayun Barmak
Publisher:
ISBN:
Category : Polycrystals
Languages : en
Pages : 806
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Author:
Publisher:
ISBN:
Category : Thin films
Languages : en
Pages : 818
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