High Purity Liquid-phase Epitaxial Indium Phosphide for Microwave Devices PDF Download
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Author: Kwan-To Ip
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 318
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Book Description
Author: Kwan-To Ip
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 318
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Book Description
Author: Lester F. Eastman
Publisher:
ISBN:
Category :
Languages : en
Pages : 8
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Book Description
This investigation covers an effort directed at the problem of obtaining Indium phosphide, by liquid phase epitaxy, for use in high-electric-field applications such as in microwave electron devices. It covers the area of determining the growth rate, the area of obtaining high purity, the area of alloyed contacts, and the determination of high-field properties. It is concluded that multiple-layer InP can be grown predictably and repeatably by liquid phase epitaxy using a multiple-well boat with the substrate on the bottom of the melt. It is also concluded that the density of total ionized impurities is the major remaining problem preventing the use of liquid phase epitaxial InP in microwave device applications. It also appears that carbon, as well as silicon, may contribute substantially to this impurity density.
Author: R. J. Malik
Publisher:
ISBN:
Category : Indium phosphide
Languages : en
Pages : 214
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Book Description
Author: Sunil Bhaskar Phatak
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 270
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Book Description
Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 1056
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Book Description
Author: James D. Oliver
Publisher:
ISBN:
Category : Indium phosphide
Languages : en
Pages : 372
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Book Description
Author: Lester F. Eastman
Publisher:
ISBN:
Category :
Languages : en
Pages : 7
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Book Description
Progress in the understanding of preparation and properties of InP material has been made in the following main areas. First in the area of liquid phase epitaxial growth a breakthrough has been made in the understanding of parameters required for the preparation of high purity material. By secondary ion mass spectrometry the single most important residual donor impurity in layers was found to be silicon. Seocnd, there is a dynamic production of volatile SiO which contaminates the melt from the walls of the growth tube. Calculations of the thermodynamics of these systems showed that the silicon content could be reduced by baking a lower and lower temperatures.
Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 1148
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Book Description
Author: Osamu Wada
Publisher: Wiley-Interscience
ISBN:
Category : Science
Languages : en
Pages : 616
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Book Description
A comprehensive guide to current techniques, applications, and trends in InP-based technologies. Introducing one of the hottest technologies in the semiconductor industry, this collection of articles by international leading experts covers the state of the art of indium phosphide (InP)-based materials and devices. From current industry practices to cutting-edge developments to promising research trends, each chapter describes a particular aspect of the technology, giving scientists and engineers the necessary information, including physical principles and technical know-how, to design, apply, and troubleshoot these high-performance, low-cost components for diverse systems-TDM and WDM optical systems or microwave and millimeter-wave systems. The advantages and challenges still to overcome of InP-based semiconductors as compared with the more mature GaAs technology are also thoroughly reviewed. Presented in an easy-to-understand tutorial style, with topics cross-referenced between chapters, InP-Based Materials and Devices features more than 1,500 references as well as 365 figures and tables. Key topics include: * Basic materials physics involved in a wide range of InP-based compounds. * Growth of high-purity bulk and heterostructure epitaxy, including MOCVD, MBE, and GS-MBE. * Hetero-interface control and dry process techniques for device fabrication. * High-performance heterojunction-FETs and HEMTs as well as HBTs for high-speed IC and MMIC applications. * Lasers, amplifiers, and modulators as well as photodiodes and receivers for high-speed and WDM networks. * Optoelectronic integration and packing for functional, low-cost modules.
Author: Peter Capper
Publisher: Wiley-Interscience
ISBN:
Category : Science
Languages : en
Pages : 472
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Book Description
Liquid-Phase Epitaxy (LPE) is a technique used in the bulk growth of crystals, typically in semiconductor manufacturing, whereby the crystal is grown from a rich solution of the semiconductor onto a substrate in layers, each of which is formed by supersaturation or cooling. At least 50% of growth in the optoelectronics area is currently focussed on LPE. This book covers the bulk growth of semiconductors, i.e. silicon, gallium arsenide, cadmium mercury telluride, indium phosphide, indium antimonide, gallium nitride, cadmium zinc telluride, a range of wide-bandgap II-VI compounds, diamond and silicon carbide, and a wide range of oxides/fluorides (including sapphire and quartz) that are used in many industrial applications. A separate chapter is devoted to the fascinating field of growth in various forms of microgravity, an activity that is approximately 30-years old and which has revealed many interesting features, some of which have been very surprising to experimenters and theoreticians alike. Covers the most important materials within the field The contributors come from a wide variety of countries and include both academics and industrialists, to give a balanced treatment Builds-on an established series known in the community Highly pertinent to current and future developments in telecommunications and computer-processing industries.
