High Purity Epitaxial Indium Phosphide Grown by the Hydride Technique PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download High Purity Epitaxial Indium Phosphide Grown by the Hydride Technique PDF full book. Access full book title High Purity Epitaxial Indium Phosphide Grown by the Hydride Technique by Thomas John Roth. Download full books in PDF and EPUB format.
Author: Thomas John Roth
Publisher:
ISBN:
Category :
Languages : en
Pages : 92
Get Book Here
Book Description
Author: Thomas John Roth
Publisher:
ISBN:
Category :
Languages : en
Pages : 92
Get Book Here
Book Description
Author: Robert K. Willardson
Publisher:
ISBN:
Category : Crystal growth
Languages : en
Pages : 432
Get Book Here
Book Description
Annotation Scientists from France, Japan, and the US summarize the advances in direct synthesis, in large crystal growth with low dislocation densities, and in epitaxial layer growth. They provide a description of substrate preparation and evaluation, and methods for the reduction of dislocations and measurement of stoichiometric defects. Topics include the state of the art in liquid encapsulated Czochralski (LEC), growth of dislocation-free InP, epitaxial InP grown by the hydride vapor phase process, commercial production of InP single crystals and substrates, and the use of low pressure MOCVD to prepare epitaxial layers of InP, GaInAs and GaInP heterostructures on InP substrates. Annotation(c) 2003 Book News, Inc., Portland, OR (booknews.com).
Author: Thomas E. Erstfeld
Publisher:
ISBN:
Category :
Languages : en
Pages : 22
Get Book Here
Book Description
A procedure was devised for the growing of high purity InP by the vapor phase epitaxy (VPE)-hydride method. A continuous in situ each with HCl of the InP substrate and the epitaxial layer under growth was developed in the VPE-hydride reactor. A study of the effect of the continuous in situ etch of HCl on the growth rates and properties of epitaxial layers prepared by the vapor phase epitaxy-hydride technique is reported. Growth rates were determined as a function of the following variables. HCl flow rates in the mixing and source zones, PH3 flow rates, and mixing zone temperatures. Epitaxial InP structures with good morphology were obtained when the continuous HCl etch was varied between 0.8 and 1.5 cc/min. The average values (77 K) of the carrier concentrations and mobilities were 1.3 x 10 to the 15th powre/cc and 23,000 sq cm/V/sec, respectively. The study indicates that the continuous in situ HCl etch improves the quality of the epitaxial InP layers.
Author: Sunil Bhaskar Phatak
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 270
Get Book Here
Book Description
Author: Mark John McCollum
Publisher:
ISBN:
Category :
Languages : en
Pages : 98
Get Book Here
Book Description
Author:
Publisher: Academic Press
ISBN: 0080864376
Category : Science
Languages : en
Pages : 457
Get Book Here
Book Description
Newly developed semiconductor microstructures can now guide light and electrons resulting in important consequences for state-of-the-art electronic and photonic devices. This volume introduces a new generation of epitaxial microstructures. Special emphasis has been given to atomic control during growth and the interrelationship between the atomic arrangements and the properties of the structures. - Atomic-level control of semiconductor microstructures - Molecular beam epitaxy, metal-organic chemical vapor deposition - Quantum wells and quantum wires - Lasers, photon(IR)detectors, heterostructure transistors
Author: V. G. Keramidas
Publisher:
ISBN:
Category : Crystal growth
Languages : en
Pages : 314
Get Book Here
Book Description
Author: R. J. Malik
Publisher:
ISBN:
Category : Indium phosphide
Languages : en
Pages : 214
Get Book Here
Book Description
Author:
Publisher: Academic Press
ISBN: 0080864384
Category : Technology & Engineering
Languages : en
Pages : 481
Get Book Here
Book Description
Volume 41 includes an in-depth review of the most important, high-speed switches made with heterojunction technology. This volume is aimed at the graduate student or working researcher who needs a broad overview andan introduction to current literature. - The first complete review of InP-based HFETs and complementary HFETs, which promise very low power and high speed - Offers a complete, three-chapter review of resonant tunneling - Provides an emphasis on circuits as well as devices
Author: Lester F. Eastman
Publisher:
ISBN:
Category :
Languages : en
Pages : 8
Get Book Here
Book Description
This investigation covers an effort directed at the problem of obtaining Indium phosphide, by liquid phase epitaxy, for use in high-electric-field applications such as in microwave electron devices. It covers the area of determining the growth rate, the area of obtaining high purity, the area of alloyed contacts, and the determination of high-field properties. It is concluded that multiple-layer InP can be grown predictably and repeatably by liquid phase epitaxy using a multiple-well boat with the substrate on the bottom of the melt. It is also concluded that the density of total ionized impurities is the major remaining problem preventing the use of liquid phase epitaxial InP in microwave device applications. It also appears that carbon, as well as silicon, may contribute substantially to this impurity density.
