Author: Gottfried Landwehr
Publisher: Springer Science & Business Media
ISBN: 3642838103
Category : Technology & Engineering
Languages : en
Pages : 666
Book Description
This volume contains contributions presented at the International Conference "The Application of High Magnetic Fields in Semiconductor Physics", which was held at the University of Wiirzburg from August 22 to 26, 1988. In the tradition of previous Wiirzburg meetings on the subject - the first conference was held in 1972 - only invited papers were presented orally. All 42 lecturers were asked to review their subject to some extent so that this book gives a good overview of the present state of the respective topic. A look at the contents shows that the subjects which have been treated at previous conferences have not lost their relevance. On the contrary, the application of high magnetic fields to semiconductors has grown substantially during the recent past. For the elucidation of the electronic band structure of semicon ductors high magnetic fields are still an indispensable tool. The investigation of two-dimensional electronic systems especially is frequently connected with the use of high magnetic fields. The reason for this is that a high B-field adds angular momentum quantization to the boundary quantization present in het erostructures and superlattices. A glance at the contributions shows that the majority deal with 2D properties. Special emphasis was on the integral and fractional quantum Hall effect. Very recent results related to the observation of a fraction with an even denbminator were presented. It became obvious that the polarization of the different fractional Landau levels is more complicated than originally anticipated.
High Magnetic Fields in Semiconductor Physics II
Author: Gottfried Landwehr
Publisher: Springer Science & Business Media
ISBN: 3642838103
Category : Technology & Engineering
Languages : en
Pages : 666
Book Description
This volume contains contributions presented at the International Conference "The Application of High Magnetic Fields in Semiconductor Physics", which was held at the University of Wiirzburg from August 22 to 26, 1988. In the tradition of previous Wiirzburg meetings on the subject - the first conference was held in 1972 - only invited papers were presented orally. All 42 lecturers were asked to review their subject to some extent so that this book gives a good overview of the present state of the respective topic. A look at the contents shows that the subjects which have been treated at previous conferences have not lost their relevance. On the contrary, the application of high magnetic fields to semiconductors has grown substantially during the recent past. For the elucidation of the electronic band structure of semicon ductors high magnetic fields are still an indispensable tool. The investigation of two-dimensional electronic systems especially is frequently connected with the use of high magnetic fields. The reason for this is that a high B-field adds angular momentum quantization to the boundary quantization present in het erostructures and superlattices. A glance at the contributions shows that the majority deal with 2D properties. Special emphasis was on the integral and fractional quantum Hall effect. Very recent results related to the observation of a fraction with an even denbminator were presented. It became obvious that the polarization of the different fractional Landau levels is more complicated than originally anticipated.
Publisher: Springer Science & Business Media
ISBN: 3642838103
Category : Technology & Engineering
Languages : en
Pages : 666
Book Description
This volume contains contributions presented at the International Conference "The Application of High Magnetic Fields in Semiconductor Physics", which was held at the University of Wiirzburg from August 22 to 26, 1988. In the tradition of previous Wiirzburg meetings on the subject - the first conference was held in 1972 - only invited papers were presented orally. All 42 lecturers were asked to review their subject to some extent so that this book gives a good overview of the present state of the respective topic. A look at the contents shows that the subjects which have been treated at previous conferences have not lost their relevance. On the contrary, the application of high magnetic fields to semiconductors has grown substantially during the recent past. For the elucidation of the electronic band structure of semicon ductors high magnetic fields are still an indispensable tool. The investigation of two-dimensional electronic systems especially is frequently connected with the use of high magnetic fields. The reason for this is that a high B-field adds angular momentum quantization to the boundary quantization present in het erostructures and superlattices. A glance at the contributions shows that the majority deal with 2D properties. Special emphasis was on the integral and fractional quantum Hall effect. Very recent results related to the observation of a fraction with an even denbminator were presented. It became obvious that the polarization of the different fractional Landau levels is more complicated than originally anticipated.
High Magnetic Fields in Semiconductor Physics III
Author: Gottfried Landwehr
Publisher: Springer Science & Business Media
ISBN: 3642844081
Category : Technology & Engineering
Languages : en
Pages : 699
Book Description
High magnetic fields have, for a long time, been an important tool in the investigation of the electronic structure of semiconductors. In recent yearsstudies of heterostructures and superlattices have predominated, and this emphasis is reflected in these proceedings. The contributions concentrate on experiments using transport and optical methods, but recent theoretical developments are also covered. Special attention is paid to the quantum Hall effect, including the problem of edge currents, the influence of contacts, and Wigner condensation in the fractional quantum Hall effect regime. The 27 invited contributions by renowned expertsprovide an excellent survey of the field that is complemented by numerous contributed papers.
Publisher: Springer Science & Business Media
ISBN: 3642844081
Category : Technology & Engineering
Languages : en
Pages : 699
Book Description
High magnetic fields have, for a long time, been an important tool in the investigation of the electronic structure of semiconductors. In recent yearsstudies of heterostructures and superlattices have predominated, and this emphasis is reflected in these proceedings. The contributions concentrate on experiments using transport and optical methods, but recent theoretical developments are also covered. Special attention is paid to the quantum Hall effect, including the problem of edge currents, the influence of contacts, and Wigner condensation in the fractional quantum Hall effect regime. The 27 invited contributions by renowned expertsprovide an excellent survey of the field that is complemented by numerous contributed papers.
High Magnetic Fields
Author: Fritz Herlach
Publisher: World Scientific
ISBN: 9812774882
Category : Science
Languages : en
Pages : 321
Book Description
This three-volume book provides a comprehensive review of experiments in very strong magnetic fields that can only be generated with very special magnets. The first volume is entirely devoted to the technology of laboratory magnets: permanent, superconducting, high-power water-cooled and hybrid; pulsed magnets, both nondestructive and destructive (megagauss fields). Volumes 2 and 3 contain reviews of the different areas of research where strong magnetic fields are an essential research tool. These volumes deal primarily with solid-state physics; other research areas covered are biological systems, chemistry, atomic and molecular physics, nuclear resonance, plasma physics and astrophysics (including QED).
Publisher: World Scientific
ISBN: 9812774882
Category : Science
Languages : en
Pages : 321
Book Description
This three-volume book provides a comprehensive review of experiments in very strong magnetic fields that can only be generated with very special magnets. The first volume is entirely devoted to the technology of laboratory magnets: permanent, superconducting, high-power water-cooled and hybrid; pulsed magnets, both nondestructive and destructive (megagauss fields). Volumes 2 and 3 contain reviews of the different areas of research where strong magnetic fields are an essential research tool. These volumes deal primarily with solid-state physics; other research areas covered are biological systems, chemistry, atomic and molecular physics, nuclear resonance, plasma physics and astrophysics (including QED).
High Magnetic Fields: Science And Technology (In 3 Volumes) - Vol. 2
Author: Fritz Herlach
Publisher: World Scientific
ISBN: 9814490547
Category : Science
Languages : en
Pages : 281
Book Description
This three-volume book provides a comprehensive review of experiments in very strong magnetic fields that can only be generated with very special magnets. The first volume is entirely devoted to the technology of laboratory magnets: permanent, superconducting, high-power water-cooled and hybrid; pulsed magnets, both nondestructive and destructive (megagauss fields). Volumes 2 and 3 contain reviews of the different areas of research where strong magnetic fields are an essential research tool. These volumes deal primarily with solid-state physics; other research areas covered are biological systems, chemistry, atomic and molecular physics, nuclear resonance, plasma physics and astrophysics (including QED).
Publisher: World Scientific
ISBN: 9814490547
Category : Science
Languages : en
Pages : 281
Book Description
This three-volume book provides a comprehensive review of experiments in very strong magnetic fields that can only be generated with very special magnets. The first volume is entirely devoted to the technology of laboratory magnets: permanent, superconducting, high-power water-cooled and hybrid; pulsed magnets, both nondestructive and destructive (megagauss fields). Volumes 2 and 3 contain reviews of the different areas of research where strong magnetic fields are an essential research tool. These volumes deal primarily with solid-state physics; other research areas covered are biological systems, chemistry, atomic and molecular physics, nuclear resonance, plasma physics and astrophysics (including QED).
Narrow Gap Semiconductors - Proceedings Of The Eighth International Conference
Author: Sue-chu Shen
Publisher: World Scientific
ISBN: 9814545325
Category :
Languages : en
Pages : 494
Book Description
Contents:Materials and Related Physics: Magnetic Field and Dimensionality Induced Population Effects in HgSe and HgSe:Fe (O Portugall et al)Growth and in Situ Scanning Tunneling Microscopy Studies of IV–VI Semiconductors (Abstract) (G Springholz)Detectors and Arrays: China's Satellite Project for Earth Observation and Infrared Detection (D-B Kuang)Recent Progress in Quantum Well Infrared Photodetectors and Focal Plane Arrays for LWIR Imaging Applications (S S Li)Infrared Lasers: Mid-Infrared Resonant-Cavity-Based Devices: Of Detectors and Emitters (J Bleuse et al)W Lasers for the Mid-IR (J R Meyer et al)Devices and Related Physics: Optoelectronic Devices from Indium Aluminium Antimonide and Mercury Cadmium Telluride (T Ashley)Three-Terminal Superconductor–Semiconductor Devices (H Takayanagi & T Akazaki)Physics: Coherent Anti-Stokes Raman Scattering in Diluted Magnetic IV–VI Epilayers and Superlattices (H Pascher et al)High Field Cyclotron Resonance in GaSb and Effective Mass at the Γ and L-Points (H Arimoto et al)Quantum Dots: Growth and Characterization of InAs Quantum Dots (N N Ledentsov)Self-Assembled InAs Quantum Boxes: Growth, Intrinsic Properties, Potential Applications (Abstract) (J M Gérard)and other papers Readership: Researchers in the field of semiconductors.
Publisher: World Scientific
ISBN: 9814545325
Category :
Languages : en
Pages : 494
Book Description
Contents:Materials and Related Physics: Magnetic Field and Dimensionality Induced Population Effects in HgSe and HgSe:Fe (O Portugall et al)Growth and in Situ Scanning Tunneling Microscopy Studies of IV–VI Semiconductors (Abstract) (G Springholz)Detectors and Arrays: China's Satellite Project for Earth Observation and Infrared Detection (D-B Kuang)Recent Progress in Quantum Well Infrared Photodetectors and Focal Plane Arrays for LWIR Imaging Applications (S S Li)Infrared Lasers: Mid-Infrared Resonant-Cavity-Based Devices: Of Detectors and Emitters (J Bleuse et al)W Lasers for the Mid-IR (J R Meyer et al)Devices and Related Physics: Optoelectronic Devices from Indium Aluminium Antimonide and Mercury Cadmium Telluride (T Ashley)Three-Terminal Superconductor–Semiconductor Devices (H Takayanagi & T Akazaki)Physics: Coherent Anti-Stokes Raman Scattering in Diluted Magnetic IV–VI Epilayers and Superlattices (H Pascher et al)High Field Cyclotron Resonance in GaSb and Effective Mass at the Γ and L-Points (H Arimoto et al)Quantum Dots: Growth and Characterization of InAs Quantum Dots (N N Ledentsov)Self-Assembled InAs Quantum Boxes: Growth, Intrinsic Properties, Potential Applications (Abstract) (J M Gérard)and other papers Readership: Researchers in the field of semiconductors.
Granular Nanoelectronics
Author: David K. Ferry
Publisher: Springer Science & Business Media
ISBN: 1489936890
Category : Science
Languages : en
Pages : 584
Book Description
The technological means now exists for approaching the fundamentallimiting scales of solid state electronics in which a single carrier can, in principle, represent a single bit in an information flow. In this light, the prospect of chemically, or biologically, engineered molccular-scale structures which might support information processing functions has enticed workers for many years. The one common factor in all suggested molecular switches, ranging from the experimentally feasible proton-tunneling structure, to natural systems such as the micro-tubule, is that each proposed structure deals with individual information carrying entities. Whereas this future molecular electronics faces enormous technical challenges, the same Iimit is already appearing in existing semiconducting quantum wires and small tunneling structures, both superconducting and normal meta! devices, in which the motion of a single eh arge through the tunneling barrier can produce a sufficient voltage change to cut-off further tunneling current. We may compare the above situation with today's Si microelectronics, where each bit is encoded as a very !arge number, not necessarily fixed, of electrons within acharge pulse. The associated reservoirs and sinks of charge carriers may be profitably tapped and manipulated to proviele macro-currents which can be readily amplified or curtailed. On the other band, modern semiconductor ULSI has progressed by adopting a linear scaling principle to the down-sizing of individual semiconductor devices.
Publisher: Springer Science & Business Media
ISBN: 1489936890
Category : Science
Languages : en
Pages : 584
Book Description
The technological means now exists for approaching the fundamentallimiting scales of solid state electronics in which a single carrier can, in principle, represent a single bit in an information flow. In this light, the prospect of chemically, or biologically, engineered molccular-scale structures which might support information processing functions has enticed workers for many years. The one common factor in all suggested molecular switches, ranging from the experimentally feasible proton-tunneling structure, to natural systems such as the micro-tubule, is that each proposed structure deals with individual information carrying entities. Whereas this future molecular electronics faces enormous technical challenges, the same Iimit is already appearing in existing semiconducting quantum wires and small tunneling structures, both superconducting and normal meta! devices, in which the motion of a single eh arge through the tunneling barrier can produce a sufficient voltage change to cut-off further tunneling current. We may compare the above situation with today's Si microelectronics, where each bit is encoded as a very !arge number, not necessarily fixed, of electrons within acharge pulse. The associated reservoirs and sinks of charge carriers may be profitably tapped and manipulated to proviele macro-currents which can be readily amplified or curtailed. On the other band, modern semiconductor ULSI has progressed by adopting a linear scaling principle to the down-sizing of individual semiconductor devices.
Organic Superconductors
Author: Takehiko Ishiguro
Publisher: Springer Science & Business Media
ISBN: 3642582621
Category : Technology & Engineering
Languages : en
Pages : 533
Book Description
Organic Superconductors is an introduction to organic conductors and superconductors and a review of the current status of the field. First, organic conductors are described, then the structures and electronic properties of organic superconductors are discussed, illustrated with examples of typical compounds. The book deals in detail with theories of the mechanism of superconductivity, and more briefly with spin-density waves. The design, principle, and synthesis of organic superconductors are also described. This second edition covers the research activities of the last few years.
Publisher: Springer Science & Business Media
ISBN: 3642582621
Category : Technology & Engineering
Languages : en
Pages : 533
Book Description
Organic Superconductors is an introduction to organic conductors and superconductors and a review of the current status of the field. First, organic conductors are described, then the structures and electronic properties of organic superconductors are discussed, illustrated with examples of typical compounds. The book deals in detail with theories of the mechanism of superconductivity, and more briefly with spin-density waves. The design, principle, and synthesis of organic superconductors are also described. This second edition covers the research activities of the last few years.
Structural Analysis of Point Defects in Solids
Author: Johann-Martin Spaeth
Publisher: Springer Science & Business Media
ISBN: 3642844057
Category : Science
Languages : en
Pages : 376
Book Description
Strutural Analysis of Point Defects in Solids introduces the principles and techniques of modern electron paramagnetic resonance (EPR) spectroscopy essentialfor applications to the determination of microscopic defect structures. Investigations of the microscopic and electronic structure, and also correlations with the magnetic propertiesof solids, require various multiple magnetic resonance methods, such as ENDOR and optically detected EPR or ENDOR. This book discusses experimental, technological and theoretical aspects of these techniques comprehensively, from a practical viewpoint, with many illustrative examples taken from semiconductors and other solids. The nonspecialist is informed about the potential of the different methods, while the researcher faced with the task of determining defect structures isprovided with the necessary tools, together with much information on computer-aided methods of data analysis and the principles of modern spectrometer design.
Publisher: Springer Science & Business Media
ISBN: 3642844057
Category : Science
Languages : en
Pages : 376
Book Description
Strutural Analysis of Point Defects in Solids introduces the principles and techniques of modern electron paramagnetic resonance (EPR) spectroscopy essentialfor applications to the determination of microscopic defect structures. Investigations of the microscopic and electronic structure, and also correlations with the magnetic propertiesof solids, require various multiple magnetic resonance methods, such as ENDOR and optically detected EPR or ENDOR. This book discusses experimental, technological and theoretical aspects of these techniques comprehensively, from a practical viewpoint, with many illustrative examples taken from semiconductors and other solids. The nonspecialist is informed about the potential of the different methods, while the researcher faced with the task of determining defect structures isprovided with the necessary tools, together with much information on computer-aided methods of data analysis and the principles of modern spectrometer design.
High Magnetic Fields: Science And Technology (In 3 Volumes) - Vol. 3
Author: Fritz Herlach
Publisher: World Scientific
ISBN: 9814490555
Category : Science
Languages : en
Pages : 321
Book Description
This three-volume book provides a comprehensive review of experiments in very strong magnetic fields that can only be generated with very special magnets. The first volume is entirely devoted to the technology of laboratory magnets: permanent, superconducting, high-power water-cooled and hybrid; pulsed magnets, both nondestructive and destructive (megagauss fields). Volumes 2 and 3 contain reviews of the different areas of research where strong magnetic fields are an essential research tool. These volumes deal primarily with solid-state physics; other research areas covered are biological systems, chemistry, atomic and molecular physics, nuclear resonance, plasma physics and astrophysics (including QED).
Publisher: World Scientific
ISBN: 9814490555
Category : Science
Languages : en
Pages : 321
Book Description
This three-volume book provides a comprehensive review of experiments in very strong magnetic fields that can only be generated with very special magnets. The first volume is entirely devoted to the technology of laboratory magnets: permanent, superconducting, high-power water-cooled and hybrid; pulsed magnets, both nondestructive and destructive (megagauss fields). Volumes 2 and 3 contain reviews of the different areas of research where strong magnetic fields are an essential research tool. These volumes deal primarily with solid-state physics; other research areas covered are biological systems, chemistry, atomic and molecular physics, nuclear resonance, plasma physics and astrophysics (including QED).
Elementary Processes in Excitations and Reactions on Solid Surfaces
Author: Ayao Okiji
Publisher: Springer Science & Business Media
ISBN: 3642611850
Category : Science
Languages : en
Pages : 250
Book Description
Elementary Processes in Excitations and Reactions on Solid Surfaces explores the fundamental nature of dynamics on solid surfaces. Attempts are made to reveal various aspects of elementary processes in excitations and reactions on solid surfaces by recent theoretical and experimental developments of the subjects such as molecular beams interacting with surfaces, ion beam scattering, laser-induced dynamical processes, electronically induced dynamical processes, and optical properties of solid surfaces. This volume is devided into three parts. Part I is concerned mainly with the rich reaction dynamics on potential-energy surfaces. Part II is devoted to the interplay of excitations. In Part III, new and rapidly developing methods are introduced.
Publisher: Springer Science & Business Media
ISBN: 3642611850
Category : Science
Languages : en
Pages : 250
Book Description
Elementary Processes in Excitations and Reactions on Solid Surfaces explores the fundamental nature of dynamics on solid surfaces. Attempts are made to reveal various aspects of elementary processes in excitations and reactions on solid surfaces by recent theoretical and experimental developments of the subjects such as molecular beams interacting with surfaces, ion beam scattering, laser-induced dynamical processes, electronically induced dynamical processes, and optical properties of solid surfaces. This volume is devided into three parts. Part I is concerned mainly with the rich reaction dynamics on potential-energy surfaces. Part II is devoted to the interplay of excitations. In Part III, new and rapidly developing methods are introduced.