Author: Guoliang Zhou
Publisher:
ISBN:
Category :
Languages : en
Pages : 424

Get Book Here

Book Description

Author: W. K. Liu
Publisher: World Scientific
ISBN: 9789810233907
Category : Technology & Engineering
Languages : en
Pages : 708

Get Book Here

Book Description
Heteroepitaxial films are commonplace among today's electronic and photonic devices. The realization of new and better devices relies on the refinement of epitaxial techniques and improved understanding of the physics underlying epitaxial growth. This book provides an up-to-date report on a wide range of materials systems. The first half reviews metallic and dielectric thin films, including chapters on metals, rare earths, metal-oxide layers, fluorides, and high-c superconductors. The second half covers semiconductor systems, reviewing developments in group-IV, arsenide, phosphide, antimonide, nitride, II-VI and IV-VI heteroepitaxy. Topics important to several systems are covered in chapters on atomic processes, ordering and growth dynamics.

Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :

Get Book Here

Book Description
The crystallographic orientation of a metal affects its surface energy and structure, and has profound implications for surface chemical reactions and interface engineering, which are important in areas ranging from optoelectronic device fabrication to catalysis. However, it can be very difficult and expensive to manufacture, orient, and cut single crystal metals along different crystallographic orientations, especially in the case of precious metals. One approach is to grow thin metal films epitaxially on dielectric substrates. In this work, we report on growth of Pt and Au films on MgO single crystal substrates of (100) and (110) surface orientation for use as epitaxial templates for thin film photovoltaic devices. We develop bias-assisted sputtering for deposition of oriented Pt and Au films with sub-nanometer roughness. We show that biasing the substrate decreases the substrate temperature necessary to achieve epitaxial orientation, with temperature reduction from 600 to 350 °C for Au, and from 750 to 550 °C for Pt, without use of transition metal seed layers. Additionally, this temperature can be further reduced by reducing the growth rate. Biased deposition with varying substrate bias power and working pressure also enables control of the film morphology and surface roughness.

Author: Andreas Jamnig
Publisher: Linköping University Electronic Press
ISBN: 9179298206
Category :
Languages : en
Pages : 108

Get Book Here

Book Description
Vapor-based growth of thin metal films with controlled morphology on weakly-interacting substrates (WIS), including oxides and van der Waals materials, is essential for the fabrication of multifunctional metal contacts in a wide array of optoelectronic devices. Achieving this entails a great challenge, since weak film/substrate interactions yield a pronounced and uncontrolled 3D morphology. Moreover, the far-from-equilibrium nature of vapor-based film growth often leads to generation of mechanical stress, which may further compromise device reliability and functionality. The objectives of this thesis are related to metal film growth on WIS and seek to: (i) contribute to the understanding of atomic-scale processes that control film morphological evolution; (ii) elucidate the dynamic competition between nanoscale processes that govern film stress generation and evolution; and (iii) develop methodologies for manipulating and controlling nanoscale film morphology between 2D and 3D. Investigations focus on magnetron sputter-deposited Ag and Cu films on SiO2 and amorphous carbon (a-C) substrates. Research is conducted by strategically combining of in situ and real-time film growth monitoring, ex situ chemical and (micro)-structural analysis, optical modelling, and deterministic growth simulations. In the first part, the scaling behavior of characteristic morphological transition thicknesses (i.e., percolation and continuous film formation thickness) during growth of Ag and Cu films on a-C are established as function of deposition rate and temperature. These data are interpreted using a theoretical framework based on the droplet growth theory and the kinetic freezing model for island coalescence, from which the diffusion rates of film forming species during Ag and Cu growth are estimated. By combining experimental data with ab initio molecular dynamics simulations, diffusion of multiatomic clusters, rather than monomers, is identified as the rate-limiting structure-forming process. In the second part, the effect of minority metallic or gaseous species (Cu, N2, O2) on Ag film morphological evolution on SiO2 is studied. By employing in situ spectroscopic ellipsometry, it is found that addition of minority species at the film growth front promotes 2D morphology, but also yields an increased continuous-layer resistivity. Ex situ analyses show that 2D morphology is favored because minority species hinder the rate of coalescence completion. Hence, a novel growth manipulation strategy is compiled in which minority species are deployed with high temporal precision to selectively target specific film growth stages and achieve 2D morphology, while retaining opto-electronic properties of pure Ag films. In the third part, the evolution of stress during Ag and Cu film growth on a-C and its dependence on growth kinetics (as determined by deposition rate, substrate temperature) is systematically investigated. A general trend toward smaller compressive stress magnitudes with increasing temperature/deposition rate is found, related to increasing grain size/decreasing adatom diffusion length. Exception to this trend is found for Cu films, in which oxygen incorporation from the residual growth atmosphere at low deposition rates inhibits adatom diffusivity and decreases the magnitude of compressive stress. The effect of N2 on stress type and magnitude in Ag films is also studied. While Ag grown in N2-free atmosphere exhibits a typical compressive-tensile-compressive stress evolution as function of thickness, addition of a few percent of N2 yields to a stress turnaround from compressive to tensile stress after film continuity which is attributed to giant grain growth and film roughening. The overall results of the thesis provide the foundation to: (i) determine diffusion rates over a wide range of WIS film/substrates systems; (ii) design non-invasive strategies for multifunctional contacts in optoelectronic devices; (iii) complete important missing pieces in the fundamental understanding of stress, which can be used to expand theoretical descriptions for predicting and tuning stress magnitude. La morphologie de films minces métalliques polycristallins élaborés par condensation d’une phase vapeur sur des substrats à faible interaction (SFI) possède un caractère 3D intrinsèque. De plus, la nature hors équilibre de la croissance du film depuis une phase vapeur conduit souvent à la génération de contraintes mécaniques, ce qui peut compromettre davantage la fiabilité et la fonctionnalité des dispositifs optoélectroniques. Les objectifs de cette thèse sont liés à la croissance de films métalliques sur SFI et visent à: (i) contribuer à une meilleure compréhension des processus à l'échelle atomique qui contrôlent l'évolution morphologique des films; (ii) élucider les processus dynamiques qui régissent la génération et l'évolution des contraintes en cours de croissance; et (iii) développer des méthodologies pour manipuler et contrôler la morphologie des films à l'échelle nanométrique. L’originalité de l’approche mise en œuvre consiste à suivre la croissance des films in situ et en temps réel par couplage de plusieurs diagnostics, complété par des analyses microstructurales ex situ. Les grandeurs mesurées sont confrontées à des modèles optiques et des simulations atomistiques. La première partie est consacrée à une étude de comportement d’échelonnement des épaisseurs de transition morphologiques caractéristiques, à savoir la percolation et la continuité du film, lors de la croissance de films polycristallins d'Ag et de Cu sur carbone amorphe (a-C). Ces grandeurs sont examinées de façon systématique en fonction de la vitesse de dépôt et de la température du substrat, et interprétées dans le cadre de la théorie de la croissance de gouttelettes suivant un modèle cinétique décrivant la coalescence d’îlots, à partir duquel les coefficients de diffusion des espèces métalliques sont estimés. En confrontant les données expérimentales à des simulations par dynamique moléculaire ab initio, la diffusion de clusters multiatomiques est identifiée comme l’étape limitante le processus de croissance. Dans la seconde partie, l’incorporation, et l’impact sur la morphologie, d’espèces métalliques ou gazeuses minoritaires (Cu, N2, O2) lors de la croissance de film Ag sur SiO2 est étudié. A partir de mesures ellipsométriques in situ, on constate que l'addition d'espèces minoritaires favorise une morphologie 2D, entravant le taux d'achèvement de la coalescence, mais donne également une résistivité accrue de la couche continue. Par conséquent, une stratégie de manipulation de la croissance est proposée dans laquelle des espèces minoritaires sont déployées avec une grande précision temporelle pour cibler sélectivement des stades de croissance de film spécifiques et obtenir une morphologie 2D, tout en conservant les propriétés optoélectroniques des films d’Ag pur. Dans la troisième partie, l'évolution des contraintes résiduelles lors de la croissance des films d'Ag et de Cu sur a-C et leur dépendance à la cinétique de croissance est systématiquement étudiée. On observe une tendance générale vers des amplitudes de contrainte de compression plus faibles avec une augmentation de la température/vitesse de dépôt, liée à l'augmentation de la taille des grains/à la diminution de la longueur de diffusion des adatomes. Également, l’ajout dans le plasma de N2 sur le type et l'amplitude des contraintes dans les films d'Ag est étudié. L'ajout de quelques pourcents de N2 en phase gaz donne lieu à un renversement de la contrainte de compression et une évolution en tension au-delà de la continuité du film. Cet effet est attribué à une croissance anormale des grains géants et le développement de rugosité de surface. L’ensemble des résultats obtenus dans cette thèse fournissent les bases pour: (i) déterminer les coefficients de diffusion sur une large gamme de systèmes films/SFI; (ii) concevoir des stratégies non invasives pour les contacts multifonctionnels dans les dispositifs optoélectroniques; (iii) apporter des éléments de compréhension à l’origine du développement de contrainte, qui permettent de prédire et contrôler le niveau de contrainte intrinsèque à la croissance de films minces polycristallins.

Author: Matthew Pelliccione
Publisher: Springer Science & Business Media
ISBN: 0387751092
Category : Technology & Engineering
Languages : en
Pages : 206

Get Book Here

Book Description
The focus of this book is on modeling and simulations used in research on the morphological evolution during film growth. The authors emphasize the detailed mathematical formulation of the problem. The book will enable readers themselves to set up a computational program to investigate specific topics of interest in thin film deposition. It will benefit those working in any discipline that requires an understanding of thin film growth processes.

Author: Amy W K Liu
Publisher: World Scientific
ISBN: 9814496405
Category : Technology & Engineering
Languages : en
Pages : 706

Get Book Here

Book Description
Heteroepitaxial films are commonplace among today's electronic and photonic devices. The realization of new and better devices relies on the refinement of epitaxial techniques and improved understanding of the physics underlying epitaxial growth. This book provides an up-to-date report on a wide range of materials systems. The first half reviews metallic and dielectric thin films, including chapters on metals, rare earths, metal-oxide layers, fluorides, and high-Tc superconductors. The second half covers semiconductor systems, reviewing developments in group-IV, arsenide, phosphide, antimonide, nitride, II-VI and IV-VI heteroepitaxy. Topics important to several systems are covered in chapters on atomic processes, ordering and growth dynamics.

Author: Andrew J. Francis
Publisher:
ISBN:
Category :
Languages : en
Pages : 0

Get Book Here

Book Description

Author: Jung-Hoon Choi
Publisher:
ISBN:
Category :
Languages : en
Pages : 168

Get Book Here

Book Description

Author: Paul Cameron McIntyre
Publisher:
ISBN:
Category :
Languages : en
Pages : 354

Get Book Here

Book Description

Author: Michael J. Aziz
Publisher: Mrs Proceedings
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 448

Get Book Here

Book Description
"The papers compiled in this volume were presented in Symposium W, 'Morphological and Compositional Evolution of Thin Films, ' held December 2-5 at the 2002 MRS Fall Meeting in Boston Massachusetts. They are organized in the order that they were presented."--P. xiii.