Growth of Highly Ga-doped ZnO Transparent Conductor and Its Applications PDF Download
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Languages : en
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Languages : en
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Author: Robin Charis Scott
Publisher:
ISBN:
Category : Pulsed laser deposition
Languages : en
Pages : 176
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Transparent conductive oxides (TCOs) are used as electrodes for a number of optoelectronic devices including solar cells. Because of its superior transparent and conductive properties, indium (In) tin (Sn) oxide (ITO) has long been at the forefront for TCO research activities and high-volume product applications. However, given the limited supply of In and potential toxicity of Sn-based compounds, attention has shifted to alternative TCOs like ZnO doped with group-III elements such as Ga and Al. Employing a variety of deposition techniques, many research groups are striving to achieve resistivities below 1E-4 ohm-cm with transmittance approaching the theoretical limit over a wide spectral range.
Author: David Levy
Publisher: John Wiley & Sons
ISBN: 3527342079
Category : Technology & Engineering
Languages : en
Pages : 390
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Edited by well-known pioneers in the field, this handbook and ready reference provides a comprehensive overview of transparent conductive materials with a strong application focus. Following an introduction to the materials and recent developments, subsequent chapters discuss the synthesis and characterization as well as the deposition techniques that are commonly used for energy harvesting and light emitting applications. Finally, the book concludes with a look at future technological advances. All-encompassing and up-to-date, this interdisciplinary text runs the gamut from chemistry and materials science to engineering, from academia to industry, and from fundamental challenges to readily available applications.
Author: Klaus Ellmer
Publisher: Springer Science & Business Media
ISBN: 3540736123
Category : Science
Languages : en
Pages : 453
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Book Description
Zinc oxide (ZnO) belongs to the class of transparent conducting oxides that can be used as transparent electrodes in electronic devices or heated windows. In this book the material properties of, the deposition technologies for, and applications of zinc oxide in thin film solar cells are described in a comprehensive manner. Structural, morphological, optical and electronic properties of ZnO are treated in this review.
Author: Salim Ziani
Publisher: Springer Nature
ISBN: 9819747767
Category :
Languages : en
Pages : 504
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Book Description
![Proceedings of the Tenth International Workshop on the Physics of Semiconductor Devices : (December 14 - 18, 1999) [New Delhi]. 2(2000) PDF](https://books.google.com/books/content/images/frontcover/pf-1NymFEscC?fife=w80-h100)
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Publisher: Allied Publishers
ISBN: 9788170239987
Category :
Languages : en
Pages : 800
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Author: Huiyong Liu
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages :
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This dissertation presents an investigation of the properties, especially the electrical properties, of doped ZnO films grown by plasma-assisted molecular beam epitaxy (MBE) under different conditions. The interest in investigating ZnO films is motivated by the potential of ZnO to replace the currently dominant ITO in industries as n-type transparent electrodes and the difficulty in achieving reliable and reproducible p-type ZnO. On the one hand, n-type ZnO heavily doped with Al or Ga (AZO or GZO) is the most promising to replace ITO due to the low cost, abundant material resources, non-toxicity, high conductivity, and high transparency. On the other hand, ZnO doped with a large-size-mismatched element of Sb (SZO) or co-doped with N and Te exhibits the possibility of achieving p-type ZnO. In this dissertation, the effects of MBE growth parameters on the properties of GZO have been investigated in detail. The ratio of oxygen to metal (Zn+Ga) was found to be critical in affecting the structural, electrical, and optical properties of GZO layers as revealed by x-ray diffraction (XRD), transmission electron microscopy (TEM), Hall measurement, photoluminescence (PL), and transmittance measurements. Highly conductive (~2×10-4 [omega]-cm) and transparent GZO films (> 90% in the visible spectral range) were achieved by MBE under metal-rich conditions (reactive oxygen to incorporated Zn ratio 1). The highly conductive and transparent GZO layers grown under optimized conditions were applied as p-side transparent electrodes in InGaN-LEDs, which exhibited many advantages over the traditional thin semi-transparent Ni/Au electrodes. The surface morphologies of GaN templates were demonstrated to be important in affecting the structural and electrical properties of GZO layers. In those highly conductive and transparent GZO layers with high-quality crystalline structures, studies revealed ionized impurity scattering being the dominant mechanism limiting the mobility in the temperature range of 15-330 K, while polar optical phonon scattering being the mechanism responsible for the temperature-dependence for T150 K. The majority Sb ions were found to reside on Zn sites instead of O sites for lower Sb concentrations (~0.1 at.%), which can lead to a high electron concentration of above 1019 cm-3 along with a high electron mobility of 110 cm2/V-s at room temperature. The reduction in electron concentration and mobility for higher Sb concentrations (~1 at.%) was caused by the deterioration of the crystalline quality. ZnO co-doped with N and Te was also studied and the advantages of the co-doping technique and problems in achieving p-type conductivity are discussed.
Author: Joseph M. Marshall
Publisher: Springer Science & Business Media
ISBN: 9401006326
Category : Technology & Engineering
Languages : en
Pages : 361
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Book Description
The primary objective of this NATO Advanced Study Institute (ASI) was to present an up-to-date overview of various current areas of interest in the field of photovoltaic and related photoactive materials. This is a wide-ranging subject area, of significant commercial and environmental interest, and involves major contributions from the disciplines of physics, chemistry, materials, electrical and instrumentation engineering, commercial realisation etc. Therefore, we sought to adopt an inter disciplinary approach, bringing together recognised experts in the various fields while retaining a level of treatment accessible to those active in specific individual areas of research and development. The lecture programme commenced with overviews of the present relevance and historical development of the subject area, plus an introduction to various underlying physical principles of importance to the materials and devices to be addressed in later lectures. Building upon this, the ASI then progressed to more detailed aspects of the subject area. We were also fortunately able to obtain a contribution from Thierry Langlois d'Estaintot of the European Commission Directorate, describing present and future EC support for activities in this field. In addition, poster sessions were held throughout the meeting, to allow participants to present and discuss their current activities. These were supported by what proved to be very effective feedback sessions (special thanks to Martin Stutzmann), prior to which groups of participants enthusiastically met (often in the bar) to identify and agree topics of common interest.
Author: Stuart Irvine
Publisher: John Wiley & Sons
ISBN: 1119313015
Category : Technology & Engineering
Languages : en
Pages : 582
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Book Description
Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).
Author: Weilie Zhou
Publisher: Springer Science & Business Media
ISBN: 1441998225
Category : Technology & Engineering
Languages : en
Pages : 550
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Book Description
Devices built from three-dimensional nanoarchitectures offer a number of advantages over those based on thin-film technology, such as larger surface area to enhance the sensitivity of sensors, to collect more sunlight to improve the efficiency of solar cells, and to supply higher density emitters for increased resolution in flat panel displays. Three-dimensional nanoscale assembly has already been used to generate many prototypes of devices and sensors, including piezoelectric nanogenerators based on ZnO nanowire arrays, photovoltaic devices based on silicon nanowire array p-n junctions, and highly sensitive gas sensors based on metal oxide nanowire arrays among others. Three-Dimensional Nanoarchitectures: Designing Next-Generation Devices describes state-of-the-art synthesis, integration, and design strategies used to create three-dimensional nanoarchitectures for functional nanodevice applications. With a focus on synthesis and fabrication methods for three-dimensional nanostructure assembly and construction, coverage includes resonators, nanophotonics, sensors, supercapacitors, solar cells, and more. This book is an essential reference for a broad audience of researchers in materials science, chemistry, physics, and electrical engineering who want the latest information on synthesis routes and assembly methods. Schematics of device integration and mechanisms as well as plots of measurement data are included.
