Growth of Boron Single Crystals PDF Download
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Author: Allen George Shinn
Publisher:
ISBN:
Category : Boron
Languages : en
Pages : 26
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Book Description
Author: Allen George Shinn
Publisher:
ISBN:
Category : Boron
Languages : en
Pages : 26
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Book Description
Author: S. B. Austerman
Publisher:
ISBN:
Category : Beryllium crystals
Languages : en
Pages : 34
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Book Description
Author: Vadim Glebovsky
Publisher: BoD – Books on Demand
ISBN: 1839626747
Category : Science
Languages : en
Pages : 126
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Book Description
In this book, a variety of topics related to crystal growth is extensively discussed. The topics encompass the physics of growing single crystals of different functional materials, single-crystalline thin films, and even the features of crystallization of biofats and oils. It is intended to provide information on advancements in technologies for crystal growth to physicists, researches, as well as engineers working with single-crystalline functional materials.
Author: Joseph Paul Sitarik
Publisher:
ISBN:
Category : Boron
Languages : en
Pages : 66
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Book Description
Author: William Donald Lawson
Publisher:
ISBN:
Category : Crystal growth
Languages : en
Pages : 284
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Book Description
Author: Hans J. Scheel
Publisher: John Wiley & Sons
ISBN: 0470491108
Category : Science
Languages : en
Pages : 695
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Book Description
This volume deals with the technologies of crystal fabrication, of crystal machining, and of epilayer production and is the first book on industrial and scientific aspects of crystal and layer production. The major industrial crystals are treated: Si, GaAs, GaP, InP, CdTe, sapphire, oxide and halide scintillator crystals, crystals for optical, piezoelectric and microwave applications and more. Contains 29 contributions from leading crystal technologists covering the following topics: * General aspects of crystal growth technology * Silicon * Compound semiconductors * Oxides and halides * Crystal machining * Epitaxy and layer deposition Scientific and technological problems of production and machining of industrial crystals are discussed by top experts, most of them from the major growth industries and crystal growth centers. In addition, it will be useful for the users of crystals, for teachers and graduate students in materials sciences, in electronic and other functional materials, chemical and metallurgical engineering, micro-and optoelectronics including nanotechnology, mechanical engineering and precision-machining, microtechnology, and in solid-state sciences.
Author: F. A. HALDEN
Publisher:
ISBN:
Category :
Languages : en
Pages : 1
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Book Description
Author: George V. Karas
Publisher: Nova Publishers
ISBN: 9781594545399
Category : Science
Languages : en
Pages : 170
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Book Description
New Developments In Crystal Growth
Author: Jiahan Li
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
While hexagonal boron nitride (hBN) in polycrystalline form has met demand for its mechanical, chemical, and thermal applications, its new electronic, optoelectronic, and nanophotonic applications required single crystals with low residual impurity concentrations. Grain boundaries and impurities need to be minimized, as they degrade the properties of hBN that are important for these new applications. The present study was undertaken to develop large area, high quality hBN single crystals at low cost, and with control over its boron isotope concentrations. Furthermore, a preliminary study was undertaken to determine if the properties of hBN could be advantageously altered by irradiation. In this study, four processes to grow and manipulate the properties of hBN single crystals were developed. First, high-quality hBN crystals were grown from an iron metal flux. The quality of crystals produced by this novel, low cost and high purity solvent was equivalent to the best reported in the literature, as verified by Raman spectroscopy, photoluminescence, defect density assessment, and current-voltage measurements. Second, hBN crystals were grown via temperature gradient method with iron-chromium flux. This method has the potential to produce larger, higher quality crystals than the slow cooling method. The maximum crystal domain size was up to 4 mm. Both in- and out-plane thermal conductivity was significantly higher than the hBN grown by slow cooling, indicating improved crystallinity. Third, monoisotopic boron hBN (h10BN and h11BN) was grown from both Fe and Fe-Cr fluxes. Raman and photoluminescence spectra show the quality of crystal grown from Fe and Fe-Cr fluxes was comparable. Fourth, neutron transmutation doping was studied as a possible method of altering the electrical and optical properties of hBN single crystals. Raman spectroscopy, photoluminescence, and electron paramagnetic resonance spectroscopies established that the effects of neutron irradiation were more pronounced on h10BN than h11BN. Together, these studies demonstrate the versatility of methods available to produce high quality hBN single crystal with specific properties.
Author: A. D. Kiffer
Publisher:
ISBN:
Category : Borides
Languages : en
Pages : 32
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Book Description
