Growth, Fabrication, and Device Characterization of InGaAs Channel GaAs-based Heterostructure Field Effect Transistors PDF Download
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Author: Barbara E. Landini
Publisher:
ISBN:
Category : Field-effect transistors
Languages : en
Pages : 440
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Book Description
Author: Barbara E. Landini
Publisher:
ISBN:
Category : Field-effect transistors
Languages : en
Pages : 440
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Book Description
Author: Albert G. Baca
Publisher: IET
ISBN: 9780863413537
Category : Technology & Engineering
Languages : en
Pages : 372
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Book Description
This book provides fundamental and practical information on all aspects of GaAs processing and gives pragmatic advice on cleaning and passivation, wet and dry etching and photolithography. Other topics covered include device performance for HBTs (Heterojunction Bipolar Transistors) and FETs (Field Effect Transistors), how these relate to processing choices, and special processing issues such as wet oxidation, which are especially important in optoelectronic devices. This book is suitable for both new and practising engineers.
Author: Svetlana Linetsky
Publisher:
ISBN:
Category :
Languages : en
Pages : 262
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Book Description
Author: Umesh Kumar Mishra
Publisher:
ISBN:
Category : Field-effect transistors
Languages : en
Pages : 446
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Book Description
Author: Daniel Gerard Ballegeer
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
InP-based heterostructure field effect transistors (HFETs) have, over the past several years, demonstrated microwave performance capabilities superior to those of GaAs-based and Si-based transistors. In particular, InGaAs/InAlAs modulation-doped field effect transistors (MODFETs) have exhibited world-record unity current gain frequencies ($fsb{t}$s) as well as extremely high power cutoff frequencies ($fsb{rm max}$s) and have, therefore, become the optimum devices for small-signal applications at high frequencies, particularly in low-noise applications. Despite these strengths, InP-based HFETs have inherent weaknesses which limit their capabilities for large-signal, high output power applications. Due to a combination of the poor Schottky characteristics of InAlAs, which is often the material in contact with the metal gate, and the small bandgap of InGaAs, which is the material often used for the channel, the devices typically have lower breakdown voltages than their GaAs counterparts. However, because of the phenomenally high values of $fsb{t}$ and $fsb{rm max}$ obtainable for these devices, there has been a growing desire to overcome these weaknesses in order that the devices can be used for high-power applications at microwave frequencies. The subject of this work is the investigation of the possibility of designing InP-based HFETs for use as high-power devices. The emphasis is not on obtaining a world-record high frequency power device; instead, the focus is on the critical issues involved when designing the devices for high power applications. Hence, the goal is to obtain an in-depth understanding of the internal physics of the FETs when they are operating as power devices, and in so doing, attempt to arrive at designs and techniques which will overcome some of the limitations of InP-based HFETs.
Author: Ioannis Kymissis
Publisher: Springer Science & Business Media
ISBN: 0387921346
Category : Technology & Engineering
Languages : en
Pages : 156
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Book Description
Organic Field Effect Transistors presents the state of the art in organic field effect transistors (OFETs), with a particular focus on the materials and techniques useful for making integrated circuits. The monograph begins with some general background on organic semiconductors, discusses the types of organic semiconductor materials suitable for making field effect transistors, the fabrication processes used to make integrated Circuits, and appropriate methods for measurement and modeling. Organic Field Effect Transistors is written as a basic introduction to the subject for practitioners. It will also be of interest to researchers looking for references and techniques that are not part of their subject area or routine. A synthetic organic chemist, for example, who is interested in making OFETs may use the book more as a device design and characterization reference. A thin film processing electrical engineer, on the other hand, may be interested in the book to learn about what types of electron carrying organic semiconductors may be worth trying and learning more about organic semiconductor physics.
Author:
Publisher:
ISBN:
Category : Chemistry
Languages : en
Pages : 2540
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Book Description
Author: C. Y. Chang
Publisher: John Wiley & Sons
ISBN: 9780471856412
Category : Technology & Engineering
Languages : en
Pages : 632
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Book Description
The performance of high-speed semiconductor devices—the genius driving digital computers, advanced electronic systems for digital signal processing, telecommunication systems, and optoelectronics—is inextricably linked to the unique physical and electrical properties of gallium arsenide. Once viewed as a novel alternative to silicon, gallium arsenide has swiftly moved into the forefront of the leading high-tech industries as an irreplaceable material in component fabrication. GaAs High-Speed Devices provides a comprehensive, state-of-the-science look at the phenomenally expansive range of engineering devices gallium arsenide has made possible—as well as the fabrication methods, operating principles, device models, novel device designs, and the material properties and physics of GaAs that are so keenly integral to their success. In a clear five-part format, the book systematically examines each of these aspects of GaAs device technology, forming the first authoritative study to consider so many important aspects at once and in such detail. Beginning with chapter 2 of part one, the book discusses such basic subjects as gallium arsenide materials and crystal properties, electron energy band structures, hole and electron transport, crystal growth of GaAs from the melt and defect density analysis. Part two describes the fabrication process of gallium arsenide devices and integrated circuits, shedding light, in chapter 3, on epitaxial growth processes, molecular beam epitaxy, and metal organic chemical vapor deposition techniques. Chapter 4 provides an introduction to wafer cleaning techniques and environment control, wet etching methods and chemicals, and dry etching systems, including reactive ion etching, focused ion beam, and laser assisted methods. Chapter 5 provides a clear overview of photolithography and nonoptical lithography techniques that include electron beam, x-ray, and ion beam lithography systems. The advances in fabrication techniques described in previous chapters necessitate an examination of low-dimension device physics, which is carried on in detail in chapter 6 of part three. Part four includes a discussion of innovative device design and operating principles which deepens and elaborates the ideas introduced in chapter 1. Key areas such as metal-semiconductor contact systems, Schottky Barrier and ohmic contact formation and reliability studies are examined in chapter 7. A detailed discussion of metal semiconductor field-effect transistors, the fabrication technology, and models and parameter extraction for device analyses occurs in chapter 8. The fifth part of the book progresses to an up-to-date discussion of heterostructure field-effect (HEMT in chapter 9), potential-effect (HBT in chapter 10), and quantum-effect devices (chapters 11 and 12), all of which are certain to have a major impact on high-speed integrated circuits and optoelectronic integrated circuit (OEIC) applications. Every facet of GaAs device technology is placed firmly in a historical context, allowing readers to see instantly the significant developmental changes that have shaped it. Featuring a look at devices still under development and device structures not yet found in the literature, GaAs High-Speed Devices also provides a valuable glimpse into the newest innovations at the center of the latest GaAs technology. An essential text for electrical engineers, materials scientists, physicists, and students, GaAs High-Speed Devices offers the first comprehensive and up-to-date look at these formidable 21st century tools. The unique physical and electrical properties of gallium arsenide has revolutionized the hardware essential to digital computers, advanced electronic systems for digital signal processing, telecommunication systems, and optoelectronics. GaAs High-Speed Devices provides the first fully comprehensive look at the enormous range of engineering devices gallium arsenide has made possible as well as the backbone of the technology—ication methods, operating principles, and the materials properties and physics of GaAs—device models and novel device designs. Featuring a clear, six-part format, the book covers: GaAs materials and crystal properties Fabrication processes of GaAs devices and integrated circuits Electron beam, x-ray, and ion beam lithography systems Metal-semiconductor contact systems Heterostructure field-effect, potential-effect, and quantum-effect devices GaAs Microwave Monolithic Integrated Circuits and Digital Integrated Circuits In addition, this comprehensive volume places every facet of the technology in an historical context and gives readers an unusual glimpse at devices still under development and device structures not yet found in the literature.
Author: Klaus Heime
Publisher: Wiley-Blackwell
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 240
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Book Description
Author: Donald W. Schulte
Publisher:
ISBN:
Category : Modulation-doped field-effect transistors
Languages : en
Pages : 114
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Book Description
This thesis reports on the growth and characterization of p-type pseudomorphic A1GaAs /InGaAs /GaAs modulation doped field effect transistor (MODFET) structures. A series of different p-type MODFET structures were grown with a systematic variation of the indium mole fraction and quantum well width of the InGaAs channel region. Extensive characterization of these samples using van der Pauw Hall and photoluminescence measurements showed clear trends in carrier mobility and quantum well quality with respect to the structure of the InGaAs region. From this an optimal indium mole fraction and quantum well width were obtained. Subsequent to material characterization, MODFET devices were fabricated and characterized. The measured DC device performance was reasonable and suggests that high quality p-type MODFETS should be obtainable with a properly optimized device structure and fabrication process.
