Metalorganic Vapor Phase Epitaxy (MOVPE)

Metalorganic Vapor Phase Epitaxy (MOVPE) PDF Author: Stuart Irvine
Publisher: John Wiley & Sons
ISBN: 1119313015
Category : Technology & Engineering
Languages : en
Pages : 582

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Book Description
Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).

Metalorganic Vapor Phase Epitaxy (MOVPE)

Metalorganic Vapor Phase Epitaxy (MOVPE) PDF Author: Stuart Irvine
Publisher: John Wiley & Sons
ISBN: 1119313015
Category : Technology & Engineering
Languages : en
Pages : 582

Get Book Here

Book Description
Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).

Metalorganic Vapor Phase Epitaxy (MOVPE)

Metalorganic Vapor Phase Epitaxy (MOVPE) PDF Author: Stuart Irvine
Publisher: John Wiley & Sons
ISBN: 111931304X
Category : Technology & Engineering
Languages : en
Pages : 586

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Book Description
Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).

Handbook of Zinc Oxide and Related Materials

Handbook of Zinc Oxide and Related Materials PDF Author: Zhe Chuan Feng
Publisher: Taylor & Francis
ISBN: 143985582X
Category : Science
Languages : en
Pages : 992

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Book Description
Through their application in energy-efficient and environmentally friendly devices, zinc oxide (ZnO) and related classes of wide gap semiconductors, including GaN and SiC, are revolutionizing numerous areas, from lighting, energy conversion, photovoltaics, and communications to biotechnology, imaging, and medicine. With an emphasis on engineering a

Nanosensors for Smart Cities

Nanosensors for Smart Cities PDF Author: Baoguo Han
Publisher: Elsevier
ISBN: 0128199237
Category : Technology & Engineering
Languages : en
Pages : 588

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Book Description
Nanosensors for Smart Cities covers the fundamental design concepts and emerging applications of nanosensors for the creation of smart city infrastructures. Examples of major applications include logistics management, where nanosensors could be used in active transport tracking devices for smart tracking and tracing, and in agri-food productions, where nanosensors are used in nanochips for identity, and food inspection, and smart storage. This book is essential reading for researchers working in the field of advanced sensors technology, smart city technology and nanotechnology, and stakeholders involved in city management. Nanomaterials based sensors (nanosensors) can offer many advantages over their microcounterparts, including lower power consumption, high sensitivity, lower concentration of analytes, and smaller interaction distance between object and sensor. With the support of artificial intelligence (AI) tools, such as fuzzy logic, genetic algorithms, neural networks, and ambient-intelligence, sensor systems are becoming smarter. - Provides information on the fabrication and fundamental design concepts of nanosensors for intelligent systems - Explores how nanosensors are being used to better monitor and maintain infrastructure services, including street lighting, traffic management and pollution control - Assesses the challenges for creating nanomaterials-enhanced sensors for mass-market consumer products

Semiconductor Nanostructures for Optoelectronic Devices

Semiconductor Nanostructures for Optoelectronic Devices PDF Author: Gyu-Chul Yi
Publisher: Springer Science & Business Media
ISBN: 3642224806
Category : Technology & Engineering
Languages : en
Pages : 347

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Book Description
This book presents the fabrication of optoelectronic nanodevices. The structures considered are nanowires, nanorods, hybrid semiconductor nanostructures, wide bandgap nanostructures for visible light emitters and graphene. The device applications of these structures are broadly explained. The book deals also with the characterization of semiconductor nanostructures. It appeals to researchers and graduate students.

Compound Semiconductors 2001

Compound Semiconductors 2001 PDF Author: Y Arakawa
Publisher: CRC Press
ISBN: 9780750308564
Category : Science
Languages : en
Pages : 908

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Book Description
An international perspective on recent research, Compound Semiconductors 2001 provides an overview of important developments in III-V compound semiconductors, such as GaAs, InP, and GaN; II-VI compounds, such as ZnSe and CdTe; and IV-IV compounds, such as SiC and SiGe. The book contains 139 papers arranged in chapters on electronic devices, optical devices, magnetic materials, novel systems, quantum transport, optical characterization, quantum nanostructures, and material growth and characterization. The content encompasses the development of optical and electronic devices based on nitride semiconductors as well as the steady advances in traditional topics like III-V-based electronic and optical devices, growth and processing, and characterization. The book also includes novel research trends in quantum structures, such as quantum wires and dots, and spintronics, which are very promising for future developments in nanotechnology. As the primary forum for research into these materials and their device applications, this resource is an essential reference for researchers working on compound semiconductors in semiconductor physics, device physics, materials science, chemistry, and electronic and electrical engineering.

Dissertation Abstracts International

Dissertation Abstracts International PDF Author:
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 884

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Book Description


Heteroepitaxy of Semiconductors

Heteroepitaxy of Semiconductors PDF Author: John E. Ayers
Publisher: CRC Press
ISBN: 1315355175
Category : Technology & Engineering
Languages : en
Pages : 794

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Book Description
In the past ten years, heteroepitaxy has continued to increase in importance with the explosive growth of the electronics industry and the development of a myriad of heteroepitaxial devices for solid state lighting, green energy, displays, communications, and digital computing. Our ever-growing understanding of the basic physics and chemistry underlying heteroepitaxy, especially lattice relaxation and dislocation dynamic, has enabled an ever-increasing emphasis on metamorphic devices. To reflect this focus, two all-new chapters have been included in this new edition. One chapter addresses metamorphic buffer layers, and the other covers metamorphic devices. The remaining seven chapters have been revised extensively with new material on crystal symmetry and relationships, III-nitride materials, lattice relaxation physics and models, in-situ characterization, and reciprocal space maps.

Advances in Nanomaterials

Advances in Nanomaterials PDF Author: Mushahid Husain
Publisher: Springer
ISBN: 8132226682
Category : Technology & Engineering
Languages : en
Pages : 439

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Book Description
This book provides a review of the latest research findings and key applications in the field of nanomaterials. The book contains twelve chapters on different aspects of nanomaterials. It begins with key fundamental concepts to aid readers new to the discipline of nanomaterials, and then moves to the different types of nanomaterials studied. The book includes chapters based on the applications of nanomaterials for nano-biotechnology and solar energy. Overall, the book comprises chapters on a variety of topics on nanomaterials from expert authors across the globe. This book will appeal to researchers and professional alike, and may also be used as a reference for courses in nanomaterials.

Comprehensive Semiconductor Science and Technology

Comprehensive Semiconductor Science and Technology PDF Author:
Publisher: Newnes
ISBN: 0080932282
Category : Science
Languages : en
Pages : 3572

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Book Description
Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts