Growth and Characterization of III-V Nitride Thin Films PDF Download
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Author: Zlatko Sitar
Publisher:
ISBN:
Category :
Languages : en
Pages : 326
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Author: Zlatko Sitar
Publisher:
ISBN:
Category :
Languages : en
Pages : 326
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Book Description
Author: 雨樵·林
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Author: Çağla Özgit-Akgün
Publisher: LAP Lambert Academic Publishing
ISBN: 9783659208232
Category :
Languages : en
Pages : 180
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Book Description
III-nitride compound semiconductors (AlN, GaN, InN) and their alloys have emerged as versatile and high-performance materials for a wide range of electronic and optoelectronic device applications. Although high quality III-nitride thin films can be grown at high temperatures (>1000 C) with significant rates, deposition of these films on temperature-sensitive device layers and substrates necessitates the adaptation of low-temperature methods such as atomic layer deposition (ALD). When compared to other low-temperature thin film deposition techniques, ALD stands out with its self-limiting growth mechanism, which enables the deposition of highly uniform and conformal thin films with sub-angstrom thickness control. These unique characteristics make ALD a powerful method especially for depositing films on nanostructured templates, as well as preparing alloy thin films with well-defined compositions. This monograph reports on the development of low-temperature ( 200 C) plasma-assisted ALD processes for III-nitrides, and presents detailed characterization results for the deposited thin films and fabricated nanostructures."
Author: Elizabeth Ann Apen
Publisher:
ISBN:
Category :
Languages : en
Pages : 348
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Author: Anthony Michael Patterson
Publisher:
ISBN:
Category :
Languages : en
Pages : 1681
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Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Zirconium nitride (ZrN) thin films were deposited by reactive dc magnetron sputtering to assess the effects of processing conditions upon film properties. Processing conditions and parameters were optimized to generate films of completely oriented (111) ZrN on silicon to be used as buffer layers for the growth of gallium nitride A single and double Langmuir probe were used to determine trends in electron temperature, ion density, ionization fraction, and floating potential during reactive sputtering of zirconium in argon and nitrogen. Reactive gas concentration, deposition pressure, deposition temperature, cathode current, film thickness and substrate orientation were investigated as variable processing conditions. Four-point probe, scanning electron microscopy (SEM), transmission electron microscopy (TEM), Raman spectroscopy, and x-ray diffraction (XRD) were used to characterize thin films produced. The optimum growth conditions for the (111) oriented growth of ZrN, for this work, were found to occur during reactive magnetron sputtering at a deposition temperature of 500 & deg;C, a constant cathode current of 0.5 ampere, a deposition pressure of 15 mTorr, a reactive nitrogen gas concentration of 4% in argon, deposited on (111) oriented silicon, with a thickness on the order of 600 nanometers. Gallium nitride was then deposited on films of ZrN to assess the crystallinity of films produced. The lattice mismatch between (111) oriented ZrN and c-axis oriented GaN was calculated at 1.6%. Microscopic evaluation showed the films to be of columnar structure with dense grains and smooth surfaces. A change in preferred orientation was noticed as a function of increasing film thickness and cathode current and was determined to be due to an increase in ion channeling and bombardment energy.
Author: Michael J. Paisley
Publisher:
ISBN:
Category :
Languages : en
Pages : 294
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Author: Edward T. Yu
Publisher: CRC Press
ISBN: 1000715957
Category : Technology & Engineering
Languages : en
Pages : 715
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Book Description
The concepts in this book will provide a comprehensive overview of the current state for a broad range of nitride semiconductor devices, as well as a detailed introduction to selected materials and processing issues of general relevance for these applications. This compilation is very timely given the level of interest and the current stage of research in nitride semiconductor materials and device applications. This volume consists of chapters written by a number of leading researchers in nitride materials and device technology addressing Ohmic and Schottky contacts, AIGalnN multiple quantum well laser diodes, nitride vertical cavity emitting lasers, and ultraviolet photodetectors. This unique volume provides a comprehensive review and introduction to application and devices based on GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers.
Author: Durvasulu Chandrasekhar
Publisher:
ISBN:
Category : Nitrides
Languages : en
Pages : 120
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Book Description
Author: Fernando A. Ponce
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 1290
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