Growth and Characterization of Heteroepitaxial Zinc Oxide Thin Films by Organometallic Vapor Phase Epitaxy PDF Download
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Author: Pierre Souletie
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Languages : en
Pages :
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Author: Pierre Souletie
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Category :
Languages : en
Pages :
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Author: Timothy Patrick Smith
Publisher:
ISBN:
Category : Metalorganic chemical vapor deposition
Languages : en
Pages : 410
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Author: Stuart Irvine
Publisher: John Wiley & Sons
ISBN: 1119313015
Category : Technology & Engineering
Languages : en
Pages : 582
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Book Description
Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).
Author:
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Category :
Languages : en
Pages :
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ZnO thin films were produced on GaN(0001) epilayers and ZnO(0001) substrates utilizing an iterative process requiring a structured low temperature (480 & deg;C) layer followed by a high temperature (800 & deg;C) densification step to create approximately 200 nm of contiguous film. This process is subsequently repeated to achieve thicker films with each iteration producing approximately 200 nm of dense film. Diethylzinc was used as the zinc source, UHP oxygen (O2) as the oxygen source, and UHP argon as both the carrier and diluent gas. Nitrous (N2O) and nitric oxide (NO2) were also used both as potential oxygen sources in the pure state as well as mixed with oxygen in the chamber and for nitrogen doping of the growing film. Major impurities of C, H, and N were incorporated into the films with the majority of the incorporation occurring during the low temperature step. Films grown using N2O + O2 contained an average of 5 x 1017 cm-3 atomic nitrogen while films using NO2 + O2 had an average nitrogen concentrations of 9 x 1019 cm-3. Needle microstructures were observed for low temperature layers using O2 and N2O + O2, while networked structures formed when using NO2 + O2. The surface of the densified films contained hexagonal pits that increased in number and depth with an increase in film thickness. Triple-axis XRD measurements indicated that the crystal structure of the films mimic the underlying substrates. A comparative analysis of undoped and N-doped films using capacitance voltage and photoluminescence measurements showed that the N-doped films were more insulating than the undoped films and the incorporation of nitrogen decreases the amount of excitonic peaks observed in the PL spectra. The 3.367 eV ionized donor bound exciton becomes dominant in N-doped films relative to the 3.361 eV donor bound exciton that dominates the undoped films. A preliminary inductively coupled plasma etching study determined that the smoothest sidewalls and surfaces were obtained using an.
Author: Chennupati Jagadish
Publisher: Elsevier
ISBN: 0080464033
Category : Science
Languages : en
Pages : 600
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Book Description
With an in-depth exploration of the following topics, this book covers the broad uses of zinc oxide within the fields of materials science and engineering: - Recent advances in bulk , thin film and nanowire growth of ZnO (including MBE, MOCVD and PLD), - The characterization of the resulting material (including the related ternary systems ZgMgO and ZnCdO), - Improvements in device processing modules (including ion implantation for doping and isolation ,Ohmic and Schottky contacts , wet and dry etching), - The role of impurities and defects on materials properties - Applications of ZnO in UV light emitters/detectors, gas, biological and chemical-sensing, transparent electronics, spintronics and thin film
Author: Jonathan Mark Pierce
Publisher:
ISBN:
Category :
Languages : en
Pages : 60
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Keywords: epitaxial, ZnO, doping, thin films.
![Growth and Characterization of Electrodeposited Zinc Sulphide and Chemical Vapour Atomic Layer Deposited Zinc Oxide, Sulphide, and Oxysulphide Thin Films [microform] PDF](https://books.google.com/books/content/images/frontcover/al5-AAAACAAJ?fife=w80-h100)
Author: Sanders, Brian Wayne
Publisher: National Library of Canada = Bibliothèque nationale du Canada
ISBN: 9780315762718
Category : Electroluminescent display systems
Languages : en
Pages : 181
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Author:
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 1420
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Author: Tammy Ben-Yaacov
Publisher:
ISBN: 9781124365916
Category :
Languages : en
Pages : 236
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In summary, this thesis describes the growth of ZnO(0001) films by MOCVD, the progress in developing ZnO material with excellent surface morphology, high crystal quality, and controllable n-type doping, as well as its application to GaN-based optoelectronic devices as a p-contact material.
Author: Paolo Mele
Publisher:
ISBN: 9781536160864
Category : Zinc oxide thin films
Languages : en
Pages : 0
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Book Description
Zinc oxide (ZnO) is an n-type semiconductor with versatile applications such as optical devices in ultraviolet region, piezoelectric transducers, transparent electrode for solar cells and gas sensors. This book "ZnO Thin Films: Properties, Performance and Applications" gives a deep insight in the intriguing science of zinc oxide thin films. It is devoted to cover the most recent advances and reviews the state of the art of ZnO thin films applications involving energy harvesting, microelectronics, magnetic devices, photocatalysis, photovoltaics, optics, thermoelectricity, piezoelectricity, electrochemistry, temperature sensing. It serves as a fundamental information source on the techniques and methodologies involved in zinc oxide thin films growth, characterization, post-deposition plasma treatments and device processing. This book will be invaluable to the experts to consolidate their knowledge and provide insight and inspiration to beginners wishing to learn about zinc oxide thin films.
