Growth and Characterization of Barium Strontium Titanate (BST) Thin Films PDF Download
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Author: Gregory Shuster
Publisher:
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Languages : en
Pages : 55
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Author: Gregory Shuster
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ISBN:
Category :
Languages : en
Pages : 55
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Author: Pradeep Jana
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Category :
Languages : en
Pages : 188
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Author: Anuranjan Srivastava
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Category :
Languages : en
Pages : 132
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Author: Supriya Ashok Ketkar
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Category :
Languages : en
Pages :
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Barium Strontium Titanate (BST) based ferroelectric thin film devices have been popular over the last decade due to their versatile applications in tunable microwave devices such as delay lines, resonators, phase shifters, and varactors. BST thin films are promising candidates due to their high dielectric constant, tunability and low dielectric loss. Dielectric-tunable properties of BST films deposited by different deposition techniques have been reported which study the effects of factors, such as oxygen vacancies, film thickness, grain size, Ba/Sr ratio, etc. Researchers have also studied doping concentrations, high temperature annealing and multilayer structures to attain higher tunability and lower loss. The aim of this investigation was to study material properties of Barium Strontium Titanate from a comprehensive point of view to establish relations between various growth techniques and the film physical and electrical properties. The primary goal of this investigation was to synthesize and characterize RF magnetron sputtered Barium Strontium Titanate (Ba1-xSrxTiO3), thin film structures and compare their properties with BST thin films deposited by sol-gel method with the aim of determining relationships between the oxide deposition parameters, the film structure, and the electric field dependence. In order to achieve higher thickness and ease of fabrication, and faster turn around time, a [grave]stacked' deposition process was adopted, wherein a thin film (around 200nm) of BST was first deposited by RF magnetron sputtering process followed by a sol-gel deposition process to achieve higher thickness. The investigation intends to bridge the knowledge gap associated with the dependence of thickness variation with respect to the tunability of the films. The film structures obtained using the three different deposition methods were also compared with respect to their analytical and electrical properties.
Author: D. O'Neill
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Category :
Languages : en
Pages :
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Author: Shylaja Katakam
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Category :
Languages : en
Pages : 156
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Author: Xiaoyuan Zhou
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Category : Barium compounds
Languages : en
Pages : 334
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Author: Kyle Marshall McNicholas
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Category :
Languages : en
Pages : 60
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Abstract: In this study Ba0.5Sr0.5TiO3 (BST) thin films were grown on (100) oriented SrTiO3 (STO) substrates using molecular beam epitaxy. The BST films were produced under varying conditions with substrate temperature ranging from 700 °C to 900 °C, nominal oxygen background pressures ranging from ~0 Torr to 1E-6 Torr, and with an oxygen environment ranging from a 200 W plasma to an ambient O2 atmosphere. The films were analyzed using a multitude of techniques including depth resolved cathodoluminescence spectroscopy (DRCLS) surface photovoltage spectroscopy (SPS), atomic force microscopy (AFM), and x-ray diffraction (XRD). The DRCLS spectra obtained from the films display well-resolved emissions at 1.9 eV, 2.1 eV, 2.26 eV, 2.95 eV, and 3.5 eV. Surface photovoltage spectroscopy results correlate well with the emissions observed in the DRCLS and allow for the assignment of the positions of these defect states within the BST band gap. Furthermore, several trends are observed correlating the nature of the 2.9 eV emission to an oxygen related defect.
Author: Costas G. Fountzoulas
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ISBN:
Category :
Languages : en
Pages : 6
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Ferroelectrics are multicomponent materials with a wealth of interesting and useful properties, such as piezoelectricity. The dielectric constant of the BSTO ferroelectrics can be changed by applying an electric field. Variable dielectric constant results in a change in phase velocity in the device allowing it to be tuned in real time for a particular application. The microstructure of the film influences the electronic properties which in turn influences the performance of the film. Ba(0.6)Sr(0.4)Ti(1-y)(A(3+), B(5+))(y)O3 thin films, of nominal thickness of 0.65 micrometer, were synthesized initially at substrate temperatures of 400 deg C, and subsequently annealed to 750 deg C, on LaAlO3 (100) substrates, previously coated with LaSrCoO conductive buffer layer, using the pulsed laser deposition technique. The microstructural and physical characteristics of the post-annealed thin films have been studied using x-ray diffraction, scanning electron microscopy, and nano indentation and are reported. Results of capacitance measurements are used to obtain dielectric constant and tunability in the paraelectric (T>Tc) regime.
Author: Danielle Marie Tahan
Publisher:
ISBN:
Category :
Languages : en
Pages : 352
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