Gallium Arsenide Phosphide Injection Laser Diodes PDF Download
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Author: Carl J. Magee
Publisher:
ISBN:
Category : Diodes
Languages : en
Pages : 236
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Author: Carl J. Magee
Publisher:
ISBN:
Category : Diodes
Languages : en
Pages : 236
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Author:
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ISBN:
Category : Lasers
Languages : en
Pages : 304
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Author: Alan G. Thompson
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Category :
Languages : en
Pages : 76
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The indium arsenide-phosphide alloy system has been studied. Indium arsenide and indium phosphide compounds were prepared by pulling and directional freezing respectively. The InP ingots were characterized for distribution coefficients and electrical properties. Ingots of InAs(1-x)P(x) were pulled by two modifications of the Czochralski technique--an all-quartz sealed system and pulling through a liquid encapsulant. The two methods are compared and the latter found to be superior for these alloys. Electrical, X-ray and mass spectrometric measurements were made on the alloy ingots. Laser diodes were fabricated in a similar manner to those reported on previously, with power outputs up to 0.5W at 1.06 micrometer with better than 1% efficiency being obtained under pulsed conditions close to 100K. Amplification of the 1.06 micrometer emission from an InAs(1-x)P(x) laser diode was demonstrated in a Nd-doped glass fiber, showing a system gain of 50,000. (Author).
Author: Carl James Magee
Publisher:
ISBN:
Category : Gallium arsenide
Languages : en
Pages : 172
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Category : Nuclear energy
Languages : en
Pages : 938
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Author: Albert H. Marshall
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Category :
Languages : en
Pages : 32
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This technical report describes the application of a semiconductor, gallium-arsenide injection laser diode to quick-kill weapon fire simulation. In some combat situations, the ability to fire quickly, without sighting, is a valuable asset to the combat soldier. This quick-kill trainer uses a gallium-arsenide, semiconductor laser diode transmitter system and a receiver mounted on a target to train riflemen for quick-kill firing techniques. However, the described system can be easily applied to pistol and other small arms training. The system consists of inexpensive components. The transmitter is completely contained in a mockup M-16 rifle. A narrow collimated beam of laser pulses in the near-infrared region of the frequency spectrum is emitted by a transistor size laser injection diode in the transmitter. These pulses, which cannot be seen by the human eye, are detected at the target by a receiver and cause a light to flash briefly, indicating, or scoring, the area of the target hit. The generated beam is safe for direct human viewing, providing the laser output energy is not greater than that generated in this application. (Author).
Author: Deborah A. Kramer
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Category : Gallium arsenide industry
Languages : en
Pages : 36
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Author:
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Category :
Languages : en
Pages :
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Author: Julie Nkanta
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Category :
Languages : en
Pages : 0
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This thesis studies the characterization and simulation of long wavelength indium aluminium gallium arsenide (InAlGaAs) lattice-matched to indium phosphide (InP) diode laser, emitting between 1.648 to 1.7 mum in wavelength. The active region of one laser diode sample consists of six In0.69Ga 0.31As quantum wells (1.0% compressive strain) and seven In0.52 Al0.36Ga0.12As unstrained barriers. The lasers are grown using digital alloy molecular beam epitaxy (MBE). The band diagram analysis shows a large conduction band offset which is typical of InAlGaAs lasers. The geometry-dependent and temperature-dependent measurement as well as the laser optical gain, loss and spectral properties were carried out and comparison done for different ridge widths (1.2 to 2.8mum), cavity lengths (555 to 2200mum) and temperature range between 25 and 70°C. The output power as a function of current characteristics reveals threshold current increase with cavity lengths and ridge widths with thermal roll-off occurring at higher injection currents. The slope efficiency and external differential quantum efficiency increases for the narrowest and widest ridge widths within the same cavity length laser device but decreases with increase in cavity length. The temperature analysis shows longer cavity length lasers exhibit better temperature characteristic than the shorter cavity length laser devices indicating the better thermal stability of the longer cavity lasers. Temperature elevations also caused increase in threshold current and decrease in efficiencies. The temperature distribution shows a higher temperature in the active region than the operating temperature due to self heating of the laser devices in continuous wave operation. The optical spectrum exhibits red-shifting of the emission wavelength with increasing bias current and temperature.
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Category :
Languages : en
Pages :
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