GaAsSb/InGaAs Type-II Quantum Wells for Long-wavelength Lasers on GaAs Substrates PDF Download
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Languages : en
Pages : 17
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The authors have investigated the properties of GaAsSb/InGaAs type-II bilayer quantum well structures grown by molecule beam epitaxy for use in long-wavelength lasers on GaAs substrates. Structures with layer, strains and thicknesses designed to be thermodynamically stable against dislocation formation exhibit room-temperature photoluminescence at wavelengths as long as 1.43 [mu]m. The photoluminescence emission wavelength is significantly affected by growth temperature and the sequence of layer growth (InGaAs/GaAsSb vs GaAsSb/InGaAs), suggesting that Sb and/or In segregation results in non-ideal interfaces under certain growth conditions. At low injection currents, double heterostructure lasers with GaAsSb/InGaAs bilayer quantum well active regions display electroluminescence at wavelengths comparable to those obtained in photoluminescence, but at higher currents the electroluminescence shifts to shorter wavelengths. Lasers have been obtained with threshold current densities as low as 120 A/cm2 at 1.17 [mu]m, and 2.1 kA/cm2 at 1.21 [mu]m.
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Category :
Languages : en
Pages : 17
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Book Description
The authors have investigated the properties of GaAsSb/InGaAs type-II bilayer quantum well structures grown by molecule beam epitaxy for use in long-wavelength lasers on GaAs substrates. Structures with layer, strains and thicknesses designed to be thermodynamically stable against dislocation formation exhibit room-temperature photoluminescence at wavelengths as long as 1.43 [mu]m. The photoluminescence emission wavelength is significantly affected by growth temperature and the sequence of layer growth (InGaAs/GaAsSb vs GaAsSb/InGaAs), suggesting that Sb and/or In segregation results in non-ideal interfaces under certain growth conditions. At low injection currents, double heterostructure lasers with GaAsSb/InGaAs bilayer quantum well active regions display electroluminescence at wavelengths comparable to those obtained in photoluminescence, but at higher currents the electroluminescence shifts to shorter wavelengths. Lasers have been obtained with threshold current densities as low as 120 A/cm2 at 1.17 [mu]m, and 2.1 kA/cm2 at 1.21 [mu]m.
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Category :
Languages : en
Pages : 9
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We have investigated the use of GaAsSb in edge-emitting laser active regions, in order to obtain lasing near 1.3 [mu]m. Single quantum well GaAsSb devices display electroluminescence at wavelengths as long as 1.34 [mu]m, but substantial blueshifts occur under high injection conditions. GaAsSb single quantum well edge emitters have been obtained which lase at 1.275 [mu]m with a room-temperature threshold current density as low as 535 A/cm2. Modification of the basic GaAsSb/GaAs structure with the addition of InGaAs layers results in a strongly type-II band alignment which can be used to further extend the emission wavelength of these devices. Using GaAsSb/InGaAs active regions, lasers emitting at 1.17 [mu]m have been obtained with room-temperature threshold current densities of 120 A/cm2, and devices operating at 1.29 [mu]m have displayed thresholds as low as 375 A/cm2. Characteristic temperatures for devices employing various GaAsSb-based active regions have been measured to be 60-73 K.
Author: 王義欣
Publisher:
ISBN:
Category :
Languages : en
Pages : 94
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Author: Juno Yu-Ting Huang
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Category :
Languages : en
Pages : 180
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Author: Nelson Tansu
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Category :
Languages : en
Pages : 332
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Author: A. G. Baca
Publisher: The Electrochemical Society
ISBN: 9781566772853
Category : Technology & Engineering
Languages : en
Pages : 230
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Book Description
The proceedings were published before the two symposia actually took place, and some of the papers presented were not received in time. The 21 that did make it discuss compound semiconductors from perspectives of recent developments in materials, growth, characterization, processing, device fabrication, and reliability. Among the specific topics are the non-crystallographic wet etching of gallium arsenide, fabricating an integrated optics One to Two optical switch, and the fabrication and materials characterization of pulsed laser deposited nickel silicide ohmic contacts to 4H n-SiC. Annotation copyrighted by Book News, Inc., Portland, OR
Author: Joachim Piprek
Publisher: CRC Press
ISBN: 149874947X
Category : Science
Languages : en
Pages : 835
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Book Description
• Provides a comprehensive survey of fundamental concepts and methods for optoelectronic device modeling and simulation. • Gives a broad overview of concepts with concise explanations illustrated by real results. • Compares different levels of modeling, from simple analytical models to complex numerical models. • Discusses practical methods of model validation. • Includes an overview of numerical techniques.
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ISBN:
Category : Optoelectronic devices
Languages : en
Pages : 514
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Author: Victor Mikhailovich Ustinov
Publisher:
ISBN: 9780198526797
Category : Science
Languages : en
Pages : 306
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The book addresses issues associated with physics and technology of injection lasers based on self-organized quantum dots. Fundamental and technological aspects of quantum dot edge-emitting lasers and VCSELs, their current status and future prospects are summarized and reviewed. Basic principles of QD formation using self-organization phenomena are reviewed. Structural and optical properties of self-organized QDs are considered with a number of examples in different material systems. Recent achievements in controlling the QD properties including the effects of vertical stacking, changing the matrix bandgap and the surface density of QDs are reviewed. The authors focus on the use of self-organized quantum dots in laser structures, fabrication and characterization of edge and surface emitting diode lasers, their properties and optimization with special attention paid to the relationship between structural and electronic properties of QDs and laser characteristics. The threshold and power characteristics of the state-of-the-art QD lasers are demonstrated. Issues related to the long-wavelength (1.3-mm) lasers on a GaAs substrate are also addressed and recent results on InGaAsN-based diode lasers presented for the purpose of comparison.
Author:
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 724
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