Formation and Characterization of CdSxTe1-x Alloys Prepared from Thin Film Couples of CdS and CdTe PDF Download
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Author:
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Category :
Languages : en
Pages : 7
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This conference paper describes the alloying between CdS and CdTe at the CdS/CdTe interface is a function of the growth temperature and post-deposition CdCl2 heat treatment (HT). In devices prepared by different techniques, Te-rich CdSxTe1-x alloys with x= 0.04 to 0.08 have been identified. We present our work on thin-film couples of CdS and CdTe, which can withstand higher level of CdCl2 treatment without the adhesion problems typically encountered in the regular device structure. CdS films with a thickness of (almost equal to)100 nm were deposited by chemical-bath deposition on glass/SnO2 substrates, and CdTe films with a thickness of 300 and 800 nm were deposited by close-spaced sublimation. The samples were treated in the presence of vapor CdCl2 at 400-450 C for 5 min. X-ray diffraction and optical analysis of the samples showed that S content in the CdSxTe1-x alloy increased systematically with the CdCl2 HT temperature. CdSxTe1-x alloy with x= 0.14 was identified for the samples treated at 4 30C, which is much higher than expected from the miscibility gap at 430C.
Author:
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ISBN:
Category :
Languages : en
Pages : 7
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Book Description
This conference paper describes the alloying between CdS and CdTe at the CdS/CdTe interface is a function of the growth temperature and post-deposition CdCl2 heat treatment (HT). In devices prepared by different techniques, Te-rich CdSxTe1-x alloys with x= 0.04 to 0.08 have been identified. We present our work on thin-film couples of CdS and CdTe, which can withstand higher level of CdCl2 treatment without the adhesion problems typically encountered in the regular device structure. CdS films with a thickness of (almost equal to)100 nm were deposited by chemical-bath deposition on glass/SnO2 substrates, and CdTe films with a thickness of 300 and 800 nm were deposited by close-spaced sublimation. The samples were treated in the presence of vapor CdCl2 at 400-450 C for 5 min. X-ray diffraction and optical analysis of the samples showed that S content in the CdSxTe1-x alloy increased systematically with the CdCl2 HT temperature. CdSxTe1-x alloy with x= 0.14 was identified for the samples treated at 4 30C, which is much higher than expected from the miscibility gap at 430C.
Author: John Carpenter
Publisher: Springer
ISBN: 3319481916
Category : Technology & Engineering
Languages : en
Pages : 773
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Book Description
This collection focuses on the characterization of minerals, metals, and materials as well as the application of characterization results on the processing of these materials. Papers cover topics such as clays, ceramics, composites, ferrous metals, non-ferrous metals, minerals, electronic materials, magnetic materials, environmental materials, advanced materials, and soft materials. In addition, papers covering materials extraction, materials processing, corrosion, welding, solidification, and method development are included. This book provides a current snapshot of characterization in materials science and its role in validating, informing, and driving current theories in the field of materials science. This volume will serve the dual purpose of furnishing a broad introduction of the field to novices while simultaneously serving to keep subject matter experts up-to-date.
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Category : Cadmium sulfide
Languages : en
Pages : 6
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A CdSxTe1-x layer forms by interdiffusion of CdS and CdTe during the fabrication of thin-film CdTe photovoltaic (PV) devices. The CdSxTe1-x layer is thought to be important because it relieves strain at the CdS/CdTe interface that would otherwise exist due to the 10% lattice mismatch between these two materials. Our previous work has indicated that the electrical junction is located in this interdiffused CdSxTe1-x region. Further understanding, however, is essential to predict the role of this CdSxTe1-x layer in the operation of CdS/CdTe devices. In this study, CdSxTe1-x alloy films were deposited by RF magnetron sputtering and co-evaporation from CdTe and CdS sources. Both radio-frequency-magnetron-sputtered and co-evaporated CdSxTe1-x films of lower S content (x
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Category :
Languages : en
Pages : 0
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Book Description
A CdSxTe1-x layer forms by interdiffusion of CdS and CdTe during the fabrication of thin-film CdTe photovoltaic (PV) devices. The CdSxTe1-x layer is thought to be important because it relieves strain at the CdS/CdTe interface that would otherwise exist due to the 10% lattice mismatch between these two materials. Our previous work [1] has indicated that the electrical junction is located in thisinterdiffused CdSxTe1-x region. Further understanding, however, is essential to predict the role of this CdSxTe1-x layer in the operation of CdS/CdTe devices. In this study, CdSxTe1-x alloy films were deposited by RF magnetron sputtering and co-evaporation from CdTe and CdS sources. Both radio-frequency-magnetron-sputtered and co-evaporated CdSxTe1-x films of lower S content (x
Author:
Publisher:
ISBN:
Category : Cadmium sulfide
Languages : en
Pages : 6
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Book Description
A CdSxTe1-x layer forms by interdiffusion of CdS and CdTe during the fabrication of thin-film CdTe photovoltaic (PV) devices. The CdSxTe1-x layer is thought to be important because it relieves strain at the CdS/CdTe interface that would otherwise exist due to the 10% lattice mismatch between these two materials. Our previous work [1] has indicated that the electrical junction is located in this interdiffused CdSxTe1-x region. Further understanding, however, is essential to predict the role of this CdSxTe1-x layer in the operation of CdS/CdTe devices. In this study, CdSxTe1-x alloy films were deposited by radio-frequency (RF) magnetron sputtering and co-evaporation from CdTe and CdS sources. Both RF-magnetron-sputtered and co-evaporated CdSxTe1-x films of lower S content (x
![Advanced Processing of CdTe- and CuIn[subscript 1-x]Ga[subscript x]Se2-Based Solar Cells: Final Technical Report, 26 May 1998-22 December 2001 PDF](https://books.google.com/books/content/images/frontcover/HZUQWv8PMD0C?fife=w80-h100)
Author: Don Louis Morel
Publisher: DIANE Publishing
ISBN: 1428917292
Category :
Languages : en
Pages : 51
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Author: R. Triboulet
Publisher: North Holland
ISBN: 9780444899101
Category : Technology & Engineering
Languages : en
Pages : 320
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Book Description
The multi-faceted qualities of CdTe have been illustrated up till now by the diverse applications to which it has given rise, ranging from the first solar cells to photorefractive devices. This volume provides a guide on progress over the last decade in CdTe and related Cd-rich alloys. CdTe portrays numerous versatile features making it an ideal material for photovoltaic conversion. It can present both types of conductivity. CdTe based semimagnetics display exciting properties making the material conducive to basic studies and potential applications. This is also true for heterostructures where the band gap engineering concept opens up a tremendous field of possibilities. Owing to these winning properties there has been a growing interest in CdTe. The articles in this volume review the new techniques incorporating CdTe, such as in epitaxial growth at low temperatures like MBE or MOCVD, as well as the rapid progress in the growth and characterization techniques leading to a better knowledge and control of its properties. The work will provide both a stimulus for future research in this field as well as useful reference material for many years to come.
Author: Ramesh G. Dhere
Publisher:
ISBN:
Category : Cadmium sulfide photoconductive cells
Languages : en
Pages : 4
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Author:
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ISBN:
Category :
Languages : en
Pages : 0
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Thin-films of CdTe, CdSe, and CdS have been electrodeposited by electrochemical atomic layer epitaxy (ECALE), using an automated electrochemical deposition system. Previous reports of an automated system for forming ECALE deposits involved use of a small thin layer flow cell, which evidenced several drawbacks. Conversion of the thin layer cell to a thick layer design resulted in greatly improved deposit quality and reproducibility. Deposits were analyzed using electron probe microanalysis (EPMA), scanning electron microscopy (SEM), and grazing-incident X-ray diffraction (XRD). The results were consistent with a layer by layer growth mode, and the principles of atomic layer epitaxy. CdTe films were grown using up to 1000 ECALE cycles, and were stoichiometeric through 500. The 1000 cycle films were a few percent rich in Te, under the conditions used. CdSe and CdS films formed also contained some excess chalcogenide, probably the result of less than ideal deposition parameters. Increasing amounts of particulates and surface roughening were observed for the 500 and 1000 cycle CdTe and CdSe films, relative to the 200 cycle deposits normally formed. This roughening may result from the excess chalcogenide. X-ray diffraction of the films indicated cubic crystal structures with preferred (111) orientations, for all three compounds.
Author: R. F. C. Farrow
Publisher:
ISBN:
Category :
Languages : en
Pages : 85
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Book Description
The MBE growth of CdTe and Hg1-xCdxTe films on InSb and CdTe substrates has been investigated. Growth conditions for high-perfection CdTe films, exactly lattice-matched to InSb substrates, have been identified. These films are ideal for substrates for Hg1-xCdxTe film growth since they are free from low-angle grain boundaries and also provide electrical isolation of the Hg1-xCdxTe film from the InSb substrate. Magnetophotoconductivity studies of abrupt n-CdTe/p-InSb heterojunctions indicate the presence of an n-type inversion layer in the InSb. This could be the basis for a new type of FET device. Conditions for growth of Hg1-xCdxTe films have been explored and films of suitable quality for LWIR device fabrication have been prepared. Originator supplied keywords include: thin films; molecular; beams; epitaxy; growth; MBE; alloys; improvement; structure; cadmium telluride; control; mercury cadmium telluride; doping; extrinsic; multilayers; compounds III-V; and compounds II-IV.
