Floating Substrate Process. Second Quarterly Progress Report, March 29, 1976--June 20, 1976 PDF Download

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Book Description
This research program began January 6, 1976. Its objective is to demonstrate the feasibility of the floating substrate sheet growth process for the growth of silicon sheet. This process is an approach to the formation of single-crystal silicon by direct epitaxial conversion from a gaseous silane. Incoming feedstock gas impinges upon a silicon substrate which is floating upon a thin pool of liquid tin. Single-crystal silicon grows to the desired thickness by means of vapor phase epitaxy. Nucleation of fresh substrate silicon takes place by rapid growth from the edge of the growing sheet into a region at the surface of the liquid tin which is supersaturated in the silicon. The process lends itself to continuous operation with the growing sheet being continuously withdrawn from the growth zone. (WDM).