Ferromegnetism in Doped Thin-film Oxide and Nitride Semiconductors and Dielectrics PDF Download
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Author: Scott A. Chambers
Publisher:
ISBN:
Category :
Languages : en
Pages : 36
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Book Description
Author: Scott A. Chambers
Publisher:
ISBN:
Category :
Languages : en
Pages : 36
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Book Description
Author: Shriram Ramanathan
Publisher: Springer Science & Business Media
ISBN: 1441906649
Category : Technology & Engineering
Languages : en
Pages : 344
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Book Description
Thin Film Metal-Oxides provides a representative account of the fundamental structure-property relations in oxide thin films. Functional properties of thin film oxides are discussed in the context of applications in emerging electronics and renewable energy technologies. Readers will find a detailed description of deposition and characterization of metal oxide thin films, theoretical treatment of select properties and their functional performance in solid state devices, from leading researchers. Scientists and engineers involved with oxide semiconductors, electronic materials and alternative energy will find Thin Film Metal-Oxides a useful reference.
Author: Evgeny Y. Tsymbal
Publisher: CRC Press
ISBN: 1439803773
Category : Science
Languages : en
Pages : 809
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Book Description
In the past several decades, the research on spin transport and magnetism has led to remarkable scientific and technological breakthroughs, including Albert Fert and Peter Grünberg’s Nobel Prize-winning discovery of giant magnetoresistance (GMR) in magnetic metallic multilayers. Handbook of Spin Transport and Magnetism provides a comprehensive, balanced account of the state of the art in the field known as spin electronics or spintronics. It reveals how key phenomena first discovered in one class of materials, such as spin injection in metals, have been revisited decades later in other materials systems, including silicon, organic semiconductors, carbon nanotubes, graphene, and carefully engineered nanostructures. The first section of the book offers a historical and personal perspective of the field written by Nobel Prize laureate Albert Fert. The second section addresses physical phenomena, such as GMR, in hybrid structures of ferromagnetic and normal metals. The third section discusses recent developments in spin-dependent tunneling, including magnetic tunnel junctions with ferroelectric barriers. In the fourth section, the contributors look at how to control spin and magnetism in semiconductors. In the fifth section, they examine phenomena typically found in nanostructures made from metals, superconductors, molecular magnets, carbon nanotubes, quantum dots, and graphene. The final section covers novel spin-based applications, including advanced magnetic sensors, nonvolatile magnetoresistive random access memory, and semiconductor spin-lasers. The techniques and materials of spintronics have rapidly evolved in recent years, leading to vast improvements in hard drive storage and magnetic sensing. With extensive cross-references between chapters, this seminal handbook provides a complete guide to spin transport and magnetism across various classes of materials and structures.
Author: Parmod Kumar
Publisher: Elsevier
ISBN: 0323909086
Category : Technology & Engineering
Languages : en
Pages : 738
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Book Description
Defect-Induced Magnetism in Oxide Semiconductors provides an overview of the latest advances in defect engineering to create new magnetic materials and enable new technological applications. First, the book introduces the mechanisms, behavior, and theory of magnetism in oxide semiconductors and reviews the methods of inducing magnetism in these materials. Then, strategies such as pulsed laser deposition and RF sputtering to grow oxide nanostructured materials with induced magnetism are discussed. This is followed by a review of the most relevant postdeposition methods to induce magnetism in oxide semiconductors including annealing, ion irradiation, and ion implantation. Examples of defect-induced magnetism in oxide semiconductors are provided along with selected applications. This book is a suitable reference for academic researchers and practitioners and for people engaged in research and development in the disciplines of materials science and engineering. - Reviews the magnetic, electrical, dielectric and optical properties of oxide semiconductors with defect-induced magnetism - Discusses growth and post-deposition strategies to grow oxide nanostructured materials such as oxide thin films with defect-induced magnetism - Provides examples of materials with defect-induced magnetism such as zinc oxide, cerium dioxide, hafnium dioxide, and more
Author: Claudia S. Schnohr
Publisher: Springer
ISBN: 3662443627
Category : Technology & Engineering
Languages : en
Pages : 367
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Book Description
X-ray Absorption Spectroscopy (XAS) is a powerful technique with which to probe the properties of matter, equally applicable to the solid, liquid and gas phases. Semiconductors are arguably our most technologically-relevant group of materials given they form the basis of the electronic and photonic devices that now so widely permeate almost every aspect of our society. The most effective utilisation of these materials today and tomorrow necessitates a detailed knowledge of their structural and vibrational properties. Through a series of comprehensive reviews, this book demonstrates the versatility of XAS for semiconductor materials analysis and presents important research activities in this ever growing field. A short introduction of the technique, aimed primarily at XAS newcomers, is followed by twenty independent chapters dedicated to distinct groups of materials. Topics span dopants in crystalline semiconductors and disorder in amorphous semiconductors to alloys and nanometric material as well as in-situ measurements of the effects of temperature and pressure. Summarizing research in their respective fields, the authors highlight important experimental findings and demonstrate the capabilities and applications of the XAS technique. This book provides a comprehensive review and valuable reference guide for both XAS newcomers and experts involved in semiconductor materials research.
Author: Satishchandra Balkrishna Ogale
Publisher: John Wiley & Sons
ISBN: 3527654887
Category : Technology & Engineering
Languages : en
Pages : 478
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Book Description
Functional oxides are used both as insulators and metallic conductors in key applications across all industrial sectors. This makes them attractive candidates in modern technology ? they make solar cells cheaper, computers more efficient and medical instrumentation more sensitive. Based on recent research, experts in the field describe novel materials, their properties and applications for energy systems, semiconductors, electronics, catalysts and thin films. This monograph is divided into 6 parts which allows the reader to find their topic of interest quickly and efficiently. * Magnetic Oxides * Dopants, Defects and Ferromagnetism in Metal Oxides * Ferroelectrics * Multiferroics * Interfaces and Magnetism * Devices and Applications This book is a valuable asset to materials scientists, solid state chemists, solid state physicists, as well as engineers in the electric and automotive industries.
Author: Evgeny Y. Tsymbal
Publisher: CRC Press
ISBN: 0429784384
Category : Science
Languages : en
Pages : 619
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Book Description
The second edition offers an update on the single most comprehensive survey of the two intertwined fields of spintronics and magnetism, covering the diverse array of materials and structures, including silicon, organic semiconductors, carbon nanotubes, graphene, and engineered nanostructures. It focuses on seminal pioneering work, together with the latest in cutting-edge advances, notably extended discussion of two-dimensional materials beyond graphene, topological insulators, skyrmions, and molecular spintronics. The main sections cover physical phenomena, spin-dependent tunneling, control of spin and magnetism in semiconductors, and spin-based applications.
Author: Arnold S. Borukhovich
Publisher: Springer
ISBN: 3319767410
Category : Technology & Engineering
Languages : en
Pages : 195
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Book Description
This book presents the physical characteristics and possible device applications of europium monoxide as well as materials based on it. It reveals the suitability of this material for device applications in super- and semiconductor spin electronics. Ferromagnetic semiconductors like europium monoxide have contributed to a fascinating research field in condensed matter physics. In the book are presented the electronic and magnetic properties and thermal and resonance parameters of this material, its peculiarities in external fields as a function of non-stoichiometry, doping level, both in single-crystal and thin-film states. Particular attention is paid to the possibility to use this monoxide or its solid solutions (composites) unconventionally for creating spin electronics structures which work at room temperature conditions. This book appeals to researchers, graduate students and professionals engaged in the development of semiconductor spin electronics and computer devices, technologists and theoretical physicists. It is important for the calculation, development and creation of spin memory devices for a quantum computer.
Author: Cheng-Han Yang
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
Over the past several years, there have been considerable interests in the possibility of creating ferromagnetism in thin films of doped oxide materials. Several systems have been identified to be ferromagnetic at room temperature but all of these systems contain either a transition metal element or a rare earth metal element as a dopant. Since in such systems the formation of second phase or clusters of magnetic ions cannot be ruled out, the origin of ferromagnetism is still controversial. Our interest is exploring the possibility of ferromagnetism existing in the oxide materials. We have chosen to study whether doping alkali earth metal oxides with nitrogen yields ferromagnetic oxides. There are several theoretical predictions that such systems will be ferromagnetic, yet there is no conclusive experimental demonstration of such a finding. In this dissertation, we demonstrate the ferromagnetism in the nitrogen-doped magnesium oxide where the N-dopant does not induce structural defects, where the N-dopant is not a metal, and where oxide is an insulator. We find that as-deposited N-doped MgO films are disordered and non-magnetic. These samples upon thermal annealing undergo a significant structural transformation with doped N atoms moving from interstitial/defect to substitutional sites within MgO lattice and the resulting films are ferromagnetic. The largest magnetic moment measured corresponds to 0.35 [mu]B/per N for the 2.2 at% N-doped MgO film. XPS data indicate the presence of an unpaired electron in 2p orbital of N. The long range spin-interaction of these unpaired N electrons mediated by the valence band of MgO is ferromagnetic. NEXAFS data support this conclusion as hole states are also observed in the O 2p state. These results for first time prove the authenticity of prior theoretical predictions about the possible ferromagnetism in N-doped alkali earth oxides. The second part of this dissertation is focused on the resistive switching in N-doped MgO for memory applications. Resistive switching in thin layers is demonstrated herein, in which the thin layer include MgO doped with a small amount of N. The resistance change ratio (RHigh/RLow) can be varied between 1-4 orders of magnitude by varying the N content with just a few percent. In addition, SET voltage can be systematically lowered by varying the N content of the layer. The resistive switching properties of the N-doped MgO structures have several other attractive features. In particular, resistive switching is demonstrated to occur by applying SET and RESET voltage pulses from 1-100 nsec in duration and to exhibit low RESET current (few tenths of [mu]A). Multi-level resistive switching is also demonstrated. These unique advantages of N-doped MgO are highly desirable for the next generation nonvolatile memory.
Author: Sunil Thapa
Publisher:
ISBN:
Category : Ferromagnetism
Languages : en
Pages : 56
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Book Description
Transition metal doped zinc oxide has been studied recently due to its potential application in spintronic devices. The magnetic semiconductor, often called Diluted Magnetic Semiconductors (DMS), has the ability to incorporate both charge and spin into a single formalism. Despite a large number of studies on ferromagnetism in ZnO based DMS and the realization of its room temperature ferromagnetism, there is still a debate about the origin of the ferromagnetism. In this work, the synthesis and characterization of transition metal doped zinc oxide have been carried out. The sol-gel method was used to synthesize thin films, and they were subsequently annealed in air. Characterization of doped zinc oxide films was carried out using the UV-visible range spectrometer, scanning electron microscopy, superconducting quantum interference device (SQUID), x-ray diffraction(XRD) and positron annihilation spectroscopy. Hysteresis loops were obtained for copper and manganese doped zinc oxide, but a reversed hysteresis loop was observed for 2% Al 3% Co doped zinc oxide. The reversed hysteresis loop has been explained using a two-layer model.
