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Author: James F. Scott
Publisher: Springer Science & Business Media
ISBN: 3662043076
Category : Technology & Engineering
Languages : en
Pages : 255
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Book Description
This is the first comprehensive book on ferroelectric memories which contains chapters on device design, processing, testing, and device physics, as well as on breakdown, leakage currents, switching mechanisms, and fatigue. State-of-the-art device designs are included and illustrated among the books many figures. More than 500 up-to-date references and 76 problems make it useful as a research reference for physicists, engineers and students.
Author: James F. Scott
Publisher: Springer Science & Business Media
ISBN: 3662043076
Category : Technology & Engineering
Languages : en
Pages : 255
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Book Description
This is the first comprehensive book on ferroelectric memories which contains chapters on device design, processing, testing, and device physics, as well as on breakdown, leakage currents, switching mechanisms, and fatigue. State-of-the-art device designs are included and illustrated among the books many figures. More than 500 up-to-date references and 76 problems make it useful as a research reference for physicists, engineers and students.
Author: Stefan Ferdinand Müller
Publisher: BoD – Books on Demand
ISBN: 3739248947
Category : Technology & Engineering
Languages : en
Pages : 137
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Book Description
This thesis evaluates the viability of ferroelectric Si:HfO2 and its derived FeFET application for non-volatile data storage. At the beginning, the ferroelectric effect is explained briefly such that the applications that make use of it can be understood. Afterwards, the latest findings on ferroelectric HfO2 are reviewed and their potential impact on future applications is discussed. Experimental data is presented afterwards focusing on the ferroelectric material characteristics of Si:HfO2 that are most relevant for memory applications. Besides others, the stability of the ferroelectric switching effect could be demonstrated in a temperature range of almost 400 K. Moreover, nanosecond switching speed and endurance in the range of 1 million to 10 billion cycles could be proven. Retention and imprint characteristics have furthermore been analyzed and are shown to be stable for 1000 hours bake time at 125 oC. Derived from the ferroelectric effect in HfO2, a 28 nm FeFET memory cell is introduced as the central application of this thesis. Based on numerical simulations, the memory concept is explained and possible routes towards an optimized FeFET cell are discussed. Subsequently, the results from electrical characterization of FeFET multi-structures are presented and discussed. By using Si:HfO2 it was possible to realize the world's first 28 nm FeFET devices possessing i.a. 10k cycling endurance and an extrapolated 10 year data retention at room temperature. The next step towards a FeFET memory is represented by connecting several memory cells into matrix-type configurations. A cell concept study illustrates the different ways in which FeFET cells can be combined together to give high density memory arrays. For the proposed architectures, operational schemes are theoretically discussed and analyzed by both electrical characterization of FeFET multi-structures and numerical simulations. The thesis concludes with the electrical characterization of small FeFET memory arrays. First results show that a separation between memory states can be achieved by applying poling and incremental step pulse programming (ISPP) sequences. These results represent an important cornerstone for future studies on Si:HfO2 and its related applications.
Author: Hiroshi Ishiwara
Publisher: Springer Science & Business Media
ISBN: 9783540407188
Category : Computers
Languages : en
Pages : 316
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Book Description
The book consists of 5 parts: (1) ferroelectric thin films, (2) deposition and characterization methods, (3) fabrication process and circuit design, (4) advanced-type memories, and (5) applications and future prospects; each part is further divided into several chapters. Because of the wide range of topics discussed, each chapter in this book was written by one of the best authors knowing the specific topic very well.
Author: Byung-Eun Park
Publisher: Springer Nature
ISBN: 9811512124
Category : Technology & Engineering
Languages : en
Pages : 421
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Book Description
This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has been most actively progressed since the late 1980s and reached modest mass production for specific application since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims the ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time. This book aims to provide the readers with development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass, plastic or paper substrates as well as in conventional Si electronics. The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films.
Author: Joe Brewer
Publisher: John Wiley & Sons
ISBN: 1118211626
Category : Technology & Engineering
Languages : en
Pages : 766
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Book Description
Presented here is an all-inclusive treatment of Flash technology, including Flash memory chips, Flash embedded in logic, binary cell Flash, and multilevel cell Flash. The book begins with a tutorial of elementary concepts to orient readers who are less familiar with the subject. Next, it covers all aspects and variations of Flash technology at a mature engineering level: basic device structures, principles of operation, related process technologies, circuit design, overall design tradeoffs, device testing, reliability, and applications.
Author: Tim Cornelissen
Publisher: Linköping University Electronic Press
ISBN: 9179298281
Category : Electronic books
Languages : en
Pages : 94
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Book Description
The continued digitalization of our society means that more and more things are getting connected electronically. Since currently used inorganic electronics are not well suited for these new applications because of costs and environmental issues, organic electronics can play an important role here. These essentially plastic materials are cheap to produce and relatively easy to recycle. Unfortunately, their poor performance has so far hindered widespread application beyond displays. One key component of any electronic device is the memory. For organic electronics several technologies are being investigated that could serve as memories. One of these are the ferroelectrics, materials that have a spontaneous electrical polarization that can be reversed with an electric field. This bistable polarization which shows hysteresis makes these materials excellent candidates for use as memories. This thesis focuses on a specific type of organic ferroelectric, the supramolecular discotics. These materials consist of disk?like molecules that form columns in which all dipolar groups are aligned, giving a macroscopic ferroelectric polarization. Of particular interest are the benzenetricarboxamides (BTA), which are used as a model system for the whole class of discotic ferroelectrics. BTA uses a core?shell architecture which allows for easy modification of the molecular structure and thereby the ferroelectric properties. To gain a deeper understanding of the switching processes in this organic ferroelectric BTA, both microscopic and analytical modeling are used. This is supported by experimental data obtained through electrical characterization. The microscopic model reduces the material to a collection of dipoles and uses electrostatics to calculate the probability that these dipoles flip. These flipping rates are the input for a kinetic Monte Carlo simulation (kMC), which simulates the behavior of the dipoles over time. With this model we simulated three different switching processes on experimental time and length scales: hysteresis loops, spontaneous depolarization, and switching transients. The results of these simulations showed a good agreement with experiments and we can rationalize the obtained parameter dependencies in the framework of thermally activated nucleation limited switching (TA?NLS). The microscopic character of the model allows for a unique insight into the nucleation process of the polarization switching. We found that nucleation happens at different locations for field driven polarization switching as compared to spontaneous polarization switching. Field?driven nucleation happens at the contacts, whereas spontaneous depolarization starts at defects. This means that retention times in disordered ferroelectrics could be improved by reducing the disorder, without affecting the coercive field. Detailed analysis of the nucleation process also revealed a critical nucleation volume that decreases with applied field, which explains the Merz?like field?dependence of the switching time observed in experiments. In parallel to these microscopic simulations we developed an analytical framework based on the theory of TA?NLS. This framework is mainly focused on describing the switching transients of disordered ferroelectrics. It can be combined with concepts of the Preisach model, which considers a non?ideal ferroelectric as a collection of ideal hysterons. We were able to relate these hysterons and the distribution in their up? and down?switching fields to the microscopic structure of the material and use the combined models to explain experimentally observed dispersive switching kinetics. Whereas ferroelectrics on their own could potentially serve as memories, the readout of ferroelectric memories becomes easier if they are combined with semiconductors. We have introduced several molecular materials following the same design principle of a core?shell structure, which uniquely combine ferroelectricity and semiconductivity in one material. The experimental IV?curves of these materials could be described using an asymmetric Marcus hopping model and show their potential as memories. The combination of modeling and experimental work in this thesis thereby provides an increased understanding of organic ferroelectrics, which is crucial for their application as memories.
Author: Yoshio Nishi
Publisher: Woodhead Publishing
ISBN: 0081025858
Category : Science
Languages : en
Pages : 662
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Book Description
Advances in Nonvolatile Memory and Storage Technology, Second Edition, addresses recent developments in the non-volatile memory spectrum, from fundamental understanding, to technological aspects. The book provides up-to-date information on the current memory technologies as related by leading experts in both academia and industry. To reflect the rapidly changing field, many new chapters have been included to feature the latest in RRAM technology, STT-RAM, memristors and more. The new edition describes the emerging technologies including oxide-based ferroelectric memories, MRAM technologies, and 3D memory. Finally, to further widen the discussion on the applications space, neuromorphic computing aspects have been included. This book is a key resource for postgraduate students and academic researchers in physics, materials science and electrical engineering. In addition, it will be a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials and portable electronic devices. Discusses emerging devices and research trends, such as neuromorphic computing and oxide-based ferroelectric memories Provides an overview on developing nonvolatile memory and storage technologies and explores their strengths and weaknesses Examines improvements to flash technology, charge trapping and resistive random access memory
Author: Carlos Pazde-Araujo
Publisher: CRC Press
ISBN: 9789056997045
Category : Technology & Engineering
Languages : en
Pages : 764
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Book Description
The aim of this book is to present in one volume some of the most significant developments that have taken place in the field of integrated ferroelectrics during the last decade of the twentieth century. The book begins with a comprehensive introduction to integrated ferroelectrics and follows with fifty-three papers selected by Carlos Paz de Araujo, Orlando Auciello, Ramamoorthy Ramesh, and George W. Taylor. These fifty-three papers were selected from more than one thousand papers published over the last eleven years in the proceedings of the International Symposia on Integrated Ferroelectrics (ISIF). These papers were chosen on the basis that they (a) give a broad view of the advances that have been made and (b) indicate the future direction of research and technological development. Readers who wish for a more in-depth treatment of the subject are encouraged to refer to volumes 1 to 27 of Integrated Ferroelectrics, the main publication vehicle for papers in this field.
Author: T. F. Connolly
Publisher: Springer Science & Business Media
ISBN: 1468462105
Category : Science
Languages : en
Pages : 713
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Book Description
Research on ferroelectricity and ferroelectric materials started in 1920 with the discovery by Valasek that the variation of spontaneous polarization in Rochelle salt with sign and magnitude of an applied electric field traced a complete and reproducible hysteresis loop. Activity in the field was sporadic until 1935, when Busch and co-workers announced the observation of similar behavior in potassium dihydrogen phosphate and related compounds. Progress thereafter continued at a modest level with the undertaking of some theoretical as well as further experimental studies. In 1944, von Hippel and co-workers discovered ferroelectricity in barium titanate. The technological importance of ceramic barium titanate and other perovskites led to an upsurge of interest, with many new ferroelectrics being identified in the following decade. By 1967, about 2000 papers on various aspects of ferroelectricity had been published. The bulk of this widely dispersed literature was concerned with the experimental measurement of dielectric, crystallographic, thermal, electromechanical, elastic, optical, and magnetic properties. A critical and excellently organized cpmpilation based on these data appeared in 1969 with the publica tion of Landolt-Bornstein, Volume 111/3. This superb tabulation gave instant access to the results in the literature on nearly 450 pure substances and solid solutions of ferroelectric and antiferroelectric materials. Continuing interest in ferroelectrics, spurred by the growing importance of electrooptic crystals, resulted in the publication of almost as many additional papers by the end of 1969 as had been surveyed in Landolt-Bornstein.
Author: Milan Pesic
Publisher: BoD – Books on Demand
ISBN: 3744867889
Category : Technology & Engineering
Languages : en
Pages : 154
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Book Description
The hafnium based ferroelectric memories offer a low power consumption, ultra-fast operation, non-volatile retention as well as the small relative cell size as the main requirements for future memories. These remarkable properties of ferroelectric memories make them promising candidates for non-volatile memories that would bridge the speed gap between fast logic and slow off-chip, long term storage. Even though the retention of hafnia based ferroelectric memories can be extrapolated to a ten-year specification target, they suffer from a rather limited endurance. Therefore, this work targets relating the field cycling behavior of hafnia based ferroelectric memories to the physical mechanisms taking place within the film stack. Establishing a correlation between the performance of the device and underlying physical mechanisms is the first step toward understanding the device and engineering guidelines for novel, superior devices. In the frame of this work, an in-depth ferroelectric and dielectric characterization, analysis and TEM study was combined with comprehensive modeling approach. Drift and diffusion based vacancy redistribution was found as the main cause for the phase transformation and consequent increase of the remnant polarization, while domain pinning and defect generation is identified to be responsible for the device fatigue. Finally, based on Landau theory, a simple way to utilize the high endurance strength of anti-ferroelectric (AFE) materials and achieve non-volatility in state-of-the-art DRAM stacks was proposed and the fabrication of the world's first non-volatile AFE-RAM is reported. These findings represent an important milestone and pave the way toward a commercialization of (anti)ferroelectric non-volatile memories based on simple binary-oxides.
