Author: Antoni Rogalski
Publisher: SPIE Press
ISBN: 9780819436191
Category : Science
Languages : en
Pages : 464
Book Description
In this monograph, investigations of the performance of narrow-gap semiconductor photodiodes are presented, and recent progress in different IR photodiode technologies is discussed: HgCdTe photodiodes, InSb photodiodes, alternatives to HgCdTe III-V and II-VI ternary alloy photodiodes, lead chalcogenide photodiodes, and a new class of photodiodes based on two-dimensional solids. Investigations of the performance of photodiodes operated in different spectral regions are presented.
Narrow-gap Semiconductor Photodiodes
Author: Antoni Rogalski
Publisher: SPIE Press
ISBN: 9780819436191
Category : Science
Languages : en
Pages : 464
Book Description
In this monograph, investigations of the performance of narrow-gap semiconductor photodiodes are presented, and recent progress in different IR photodiode technologies is discussed: HgCdTe photodiodes, InSb photodiodes, alternatives to HgCdTe III-V and II-VI ternary alloy photodiodes, lead chalcogenide photodiodes, and a new class of photodiodes based on two-dimensional solids. Investigations of the performance of photodiodes operated in different spectral regions are presented.
Publisher: SPIE Press
ISBN: 9780819436191
Category : Science
Languages : en
Pages : 464
Book Description
In this monograph, investigations of the performance of narrow-gap semiconductor photodiodes are presented, and recent progress in different IR photodiode technologies is discussed: HgCdTe photodiodes, InSb photodiodes, alternatives to HgCdTe III-V and II-VI ternary alloy photodiodes, lead chalcogenide photodiodes, and a new class of photodiodes based on two-dimensional solids. Investigations of the performance of photodiodes operated in different spectral regions are presented.
The Physics of SiO2 and Its Interfaces
Author: Sokrates T. Pantelides
Publisher: Elsevier
ISBN: 148313900X
Category : Science
Languages : en
Pages : 501
Book Description
The Physics of SiO2 and Its Interfaces covers the proceedings of the International Topical Conference on the Physics of SiO2 and its Interfaces, held at the IBM Thomas J. Watson Research Center, Yorktown Heights, New York on March 22-24, 1978. The book focuses on the properties, reactions, transformations, and structures of silicon dioxide (SiO2). The selection first discusses the electronic properties of vitreous SiO2 and small polaron formation and motion of holes in a-SiO2. Discussions focus on mobility edges and polarons, deep states in the gap, and excitons. The text also ponders on field-dependent hole and exciton transport in SiO2 and electron emission from SiO2 into vacuum. The publication takes a look at the electronic structures of crystalline and amorphous SiO2; band structures and electronic properties of SiO2; and optical absorption spectrum of SiO2. The text also tackles chemical bond and related properties of SiO2; topological effects on the band structure of silica; and properties of localized SiO2 clusters in layers of disordered silicon on silver. The selection is a good reference for physicists and readers interested in the physics of silicon dioxide.
Publisher: Elsevier
ISBN: 148313900X
Category : Science
Languages : en
Pages : 501
Book Description
The Physics of SiO2 and Its Interfaces covers the proceedings of the International Topical Conference on the Physics of SiO2 and its Interfaces, held at the IBM Thomas J. Watson Research Center, Yorktown Heights, New York on March 22-24, 1978. The book focuses on the properties, reactions, transformations, and structures of silicon dioxide (SiO2). The selection first discusses the electronic properties of vitreous SiO2 and small polaron formation and motion of holes in a-SiO2. Discussions focus on mobility edges and polarons, deep states in the gap, and excitons. The text also ponders on field-dependent hole and exciton transport in SiO2 and electron emission from SiO2 into vacuum. The publication takes a look at the electronic structures of crystalline and amorphous SiO2; band structures and electronic properties of SiO2; and optical absorption spectrum of SiO2. The text also tackles chemical bond and related properties of SiO2; topological effects on the band structure of silica; and properties of localized SiO2 clusters in layers of disordered silicon on silver. The selection is a good reference for physicists and readers interested in the physics of silicon dioxide.
Scientific and Technical Aerospace Reports
Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 960
Book Description
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 960
Book Description
Advances in Focal Plane Technology, February 4-5, 1980, Los Angeles, California
Author: William S. Chan
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 266
Book Description
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 266
Book Description
Technical Digest
Author:
Publisher:
ISBN:
Category : Electronic apparatus and appliances
Languages : en
Pages : 712
Book Description
Publisher:
ISBN:
Category : Electronic apparatus and appliances
Languages : en
Pages : 712
Book Description
Microcircuit Reliability Bibliography
Author:
Publisher:
ISBN:
Category : Integrated circuits
Languages : en
Pages : 412
Book Description
Publisher:
ISBN:
Category : Integrated circuits
Languages : en
Pages : 412
Book Description
Optical Sensors
Author: Chih-Hong Chen
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 220
Book Description
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 220
Book Description
Technical Abstract Bulletin
Author:
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 116
Book Description
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 116
Book Description
Optical Engineering
Author:
Publisher:
ISBN:
Category : Optical instruments
Languages : en
Pages :
Book Description
Publisher:
ISBN:
Category : Optical instruments
Languages : en
Pages :
Book Description
Infrared Image Sensor Technology
Author: Esther Krikorian
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 186
Book Description
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 186
Book Description