Etude spectroscopique de l'ionisation d'un plasma d'aluminium par absorption d'une source X

Etude spectroscopique de l'ionisation d'un plasma d'aluminium par absorption d'une source X PDF Author: Marta Fajardo
Publisher:
ISBN:
Category :
Languages : fr
Pages : 468

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Book Description
La spectroscopie de rayons X en absorption constitue un diagnostic privilégié d'un plasma produit par laser, lorsque celui-ci est non-émetteur. Nous avons utilisé des sources X, que nous avons caractérisées, pour l'étude par spectroscopie d'absorption de plasmas à l'équilibre thermodynamique local (ETL) et hors-ETL. Premièrement, un plasma à l'ETL a été crée en chauffant radiativement des cibles minces composées de couches aluminium/nickel, par le rayonnement X provenant de feuilles d'or et thermalisé par une cavité. L'aluminium a prouvé être un bon thermomètre selon le degré de mélange, et les températures déduites à partir de comparaisons avec des codes de physique atomique à l'ETL ont montré un bon accord avec des simulations hydrodynamiques. La dynamique d'ionisation d'un plasma d'aluminium en expansion, crée par un laser nanoseconde, a été étudiée ensuite. Une sonde X créée par laser femtoseconde sondait le plasma en absorption par projection ponctuelle, permettant d'obtenir une carte spatio-temporelle de la distribution ionique avec résolution temporelle de l'ordre de la picoseconde. Le plasma d'aluminium était hors-ETL et un modèle collisionnel-radiatif détaillé a été couplé à un code hydrodynamique radiatif réaliste pour l'interprétation de nos résultats expérimentaux.

Etude spectroscopique de l'ionisation d'un plasma d'aluminium par absorption d'une source X

Etude spectroscopique de l'ionisation d'un plasma d'aluminium par absorption d'une source X PDF Author: Marta Fajardo
Publisher:
ISBN:
Category :
Languages : fr
Pages : 468

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Book Description
La spectroscopie de rayons X en absorption constitue un diagnostic privilégié d'un plasma produit par laser, lorsque celui-ci est non-émetteur. Nous avons utilisé des sources X, que nous avons caractérisées, pour l'étude par spectroscopie d'absorption de plasmas à l'équilibre thermodynamique local (ETL) et hors-ETL. Premièrement, un plasma à l'ETL a été crée en chauffant radiativement des cibles minces composées de couches aluminium/nickel, par le rayonnement X provenant de feuilles d'or et thermalisé par une cavité. L'aluminium a prouvé être un bon thermomètre selon le degré de mélange, et les températures déduites à partir de comparaisons avec des codes de physique atomique à l'ETL ont montré un bon accord avec des simulations hydrodynamiques. La dynamique d'ionisation d'un plasma d'aluminium en expansion, crée par un laser nanoseconde, a été étudiée ensuite. Une sonde X créée par laser femtoseconde sondait le plasma en absorption par projection ponctuelle, permettant d'obtenir une carte spatio-temporelle de la distribution ionique avec résolution temporelle de l'ordre de la picoseconde. Le plasma d'aluminium était hors-ETL et un modèle collisionnel-radiatif détaillé a été couplé à un code hydrodynamique radiatif réaliste pour l'interprétation de nos résultats expérimentaux.

Defects in Semiconductors

Defects in Semiconductors PDF Author:
Publisher: Academic Press
ISBN: 0128019409
Category : Technology & Engineering
Languages : en
Pages : 458

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Book Description
This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoretical paths. - Expert contributors - Reviews of the most important recent literature - Clear illustrations - A broad view, including examination of defects in different semiconductors

Prussian Blue-type Nanoparticles and Nanocomposites

Prussian Blue-type Nanoparticles and Nanocomposites PDF Author: Yannick Guari
Publisher:
ISBN: 9780429653766
Category : MEDICAL
Languages : en
Pages :

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Book Description
Nanochemistry tools aid the design of Prussian blue and its analogue nanoparticles and nanocomposites. The use of such nanomaterials is now widely regarded as an alternative to other inorganic nanomaterials in a variety of scientific applications. This book, after addressing Prussian blue and its analogues in a historical context and their numerous applications over time, compiles and details the latest cutting-edge scientific research on these nanomaterials. It compiles and deatils the latest cutting-edge scientific research on these nanomaterials. The book provides an overview of the methodological concepts of the nanoscale synthesis of Prussian blue and its analogues, as well as the study and understanding of their properties and of the extent and diversity of application fields in relation to the major societal challenges of the 21st century on energy, environment, and health.

Applied Mineralogy in the Mining Industry

Applied Mineralogy in the Mining Industry PDF Author: W. Petruk
Publisher: Elsevier
ISBN: 0080527337
Category : Technology & Engineering
Languages : en
Pages : 287

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Book Description
Techniques of performing applied mineralogy investigations, and applications and capabilities of recently developed instruments for measuring mineral properties are explored in this book intended for practicing applied mineralogists, students in mineralogy and metallurgy, and mineral processing engineers. The benefits of applied mineralogy are presented by using in-depth applied mineralogy studies on base metal ores, gold ores, porphyry copper ores, iron ores and industrial minerals as examples. The chapter on base metal ores includes a discussion on the effects of liberation, particle sizes and surfaces coatings of Pb, Cu, Fe, Ca and So4- on the recoveries of sphalerite, galena and chalcopyrite. The chapter on gold discusses various methods of determining the quantities of gold in different minerals, including 'invisible' gold in pyrite and arsenopyrite, so that a balance of the distribution of gold among the minerals can be calculated. This book also discusses the roles of pyrite, oxygen, moisture and bacterial (thiobacillus ferrooxidans) on reactions that produce acidic drainage from tailings piles, and summarizes currently used and proposed methods of remediation of acidic drainage.

Characterisation and Control of Defects in Semiconductors

Characterisation and Control of Defects in Semiconductors PDF Author: Filip Tuomisto
Publisher: Materials, Circuits and Device
ISBN: 1785616552
Category : Technology & Engineering
Languages : en
Pages : 601

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Book Description
This book provides an up-to-date review of the experimental and theoretical methods used for studying defects in semiconductors, this book focuses on recent developments driven by the requirements of new materials, including nitrides, oxide semiconductors and 2-D semiconductors.

Hydrogen in Semiconductors II

Hydrogen in Semiconductors II PDF Author:
Publisher: Academic Press
ISBN: 0080525253
Category : Science
Languages : en
Pages : 541

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Book Description
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry. - Provides the most in-depth coverage of hydrogen in silicon available in a single source - Includes an extensive chapter on the neutralization of defects in III*b1V semiconductors - Combines both experimental and theoretical studies to form a comprehensive reference

DX Centers

DX Centers PDF Author: Elias Munoz Merino
Publisher: Trans Tech Publications Ltd
ISBN: 3035706530
Category : Technology & Engineering
Languages : en
Pages : 186

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Book Description
During the last 25 years, the behavior of donors in III-V alloys has been the subject of a very extensive research effort. The research emphasis on AlGaAs compounds is motivated by the industrial importance of AlGaAs/GaAs heterojunction based devices. As seeing it now, "the DX center problem", the behavior of donors in III-V alloys, has shown to be unexpectedly difficult to understand. To determine the microscopic nature of the DX center is still a challenging problem.

Masters Theses in the Pure and Applied Sciences

Masters Theses in the Pure and Applied Sciences PDF Author: Wade H. Shafer
Publisher: Springer
ISBN: 9780306341205
Category : Science
Languages : en
Pages : 320

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Book Description
Masters Theses in the Pure and Applied Sciences was first conceived, published, and dis· seminated by the Center for Information and Numerical Data Analysis and Synthesis (CINDAS) *at Purdue University in 1957, starting its coverage of theses with the academic year 1955. Beginning with Volume 13, the printing and dissemination phases of the ac· tivity were transferred to University Microfilms/Xerox of Ann Arbor, Michigan, with the thought that such an arrangement would be more beneficial to the academic and general scientific and technical community. After five years of this joint undertaking we had concluded that it was in the interest of all concerned if the printing and distribution of the volume were handled by an international publishing house to assure improved service and broader dissemination. Hence, starting with Volume 18, Masters Theses in the Pure and Applied Sciences has been disseminated on a worldwide basis by Plenum Publishing Corporation of New York, and in the same year the coverage was broadened to include Canadian universities. All back issues can also be ordered from Plenum. We have reported in Volume 20 (thesis year 1975) a total of 10,374 theses titles from 28 Canadian and 239 United States universities. We are sure that this broader base for theses titles reported will greatly enhance the value of this important annual reference work. The organization of Volume 20 is identical to that of past years. It consists of theses titles arranged by discipline and by university within each discipline.

The Si-SiO2 System

The Si-SiO2 System PDF Author: P. Balk
Publisher: Elsevier Publishing Company
ISBN:
Category : Science
Languages : en
Pages : 376

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Book Description
The Si-SiO 2 system has been the subject of concentrated research for over 25 years, particularly because of its key role in silicon integrated circuits. However, only a few comprehensive treatises on this field have been published in recent years. This book focuses on the materials science and technology aspects of the system. Its aim is to give a comprehensive overview of the topic, including an extensive list of references giving easy access to the literature. After an introductory chapter which reviews the Si-SiO 2 system from the perspective of other semiconductor-insulator combinations of technical interest, the technology of oxide preparation is discussed. Fundamental questions regarding the structure and chemistry of the interfacial region are then addressed. Two chapters are concerned with system properties: one deals with the physico-chemical, electrical and device-related characteristics and the way these are affected by the technology of oxide preparation; a second chapter focuses on point defects and charge trapping. The book concludes with a broad review of the techniques available for electrical characterization of the system, including the physical background.

Semiconductor Surfaces and Interfaces

Semiconductor Surfaces and Interfaces PDF Author: Friedhelm Bechstedt
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 484

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Book Description