Epitaxial Growth and Intrinsic Magnetic Properties of Magnetic Thin Films on Semiconductor Materials

Epitaxial Growth and Intrinsic Magnetic Properties of Magnetic Thin Films on Semiconductor Materials PDF Author: Cong Lu
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Category :
Languages : en
Pages :

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Epitaxial Growth and Intrinsic Magnetic Properties of Magnetic Thin Films on Semiconductor Materials

Epitaxial Growth and Intrinsic Magnetic Properties of Magnetic Thin Films on Semiconductor Materials PDF Author: Cong Lu
Publisher:
ISBN:
Category :
Languages : en
Pages :

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Growth and Properties of Ultrathin Epitaxial Layers

Growth and Properties of Ultrathin Epitaxial Layers PDF Author:
Publisher: Elsevier
ISBN: 0080532675
Category : Science
Languages : en
Pages : 673

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Although there has been steady progress in understanding aspects of epitaxial growth throughout the last 30 years of modern surface science, work in this area has intensified greatly in the last 5 years. A number of factors have contributed to this expansion. One has been the general trend in surface science to tackle problems of increasing complexity as confidence is gained in the methodology, so for example, the role of oxide/metal interfaces in determining the properties of many practical supported catalysts is now being explored in greater detail. A second factor is the recognition of the potential importance of artificial multilayer materials not only in semiconductor devices but also in metal/metal systems because of their novel magnetic properties. Perhaps even more important than either of these application areas, however, is the newly-discovered power of scanning probe microscopies, and most notably scanning tunneling microscopy (STM), to provide the means to study epitaxial growth phenomena on an atomic scale under a wide range of conditions. These techniques have also contributed to revitalised interest in methods of fabricating and exploiting artificial structures (lateral as well as in layers) on a nanometre scale.This volume, on Growth and Properties of Ultrathin Epitaxial Layers, includes a collection of articles which reflects the present state of activity in this field. The emphasis is on metals and oxides rather than semiconductors.

Epitaxial Sm-Co Thin Films

Epitaxial Sm-Co Thin Films PDF Author:
Publisher: Cuvillier Verlag
ISBN: 3736921071
Category : Science
Languages : en
Pages : 118

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Epitaxial Oxide Thin Films II: Volume 401

Epitaxial Oxide Thin Films II: Volume 401 PDF Author: James S. Speck
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 588

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Our understanding and control of epitaxial oxide heterostructures has progressed along multiple frontiers including magnetic, dielectric, ferroelectric, and superconducting oxide materials. This has resulted in both independent rediscovery and the successful borrowing of ideas from ceramic science, solid-state physics, and semiconductor epitaxy. A new field of materials science has emerged which aims at the use of the intrinsic properties of various oxide materials in single-crystal thin-film form. Exploiting the potential of these materials, however, will only be possible if many fundamental and engineering questions can be answered. This book represents continued progress toward fulfilling that promise. Technical information on epitaxial oxide thin films from industry, academia and government laboratories is presented. Topics include: dielectrics; ferroelectrics; optics; superconductors; magnetics; magnetoresistance.

Investigations of the Epitaxial Growth and Characterization of High Perfection Magnetic Thin Films

Investigations of the Epitaxial Growth and Characterization of High Perfection Magnetic Thin Films PDF Author:
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ISBN:
Category :
Languages : en
Pages : 43

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Methods of preparing high-perfection single crystalline films of 3d elements (including Fe, Co) and magnetic rare earths on semiconducting GaAs substrates have been investigated. The use of seed layers of Fe or Co (a few monolayers thick), deposited onto GaAs(001), followed by a Ag(001) film, provided a suitable template for Fe epitaxy. This method avoided interfacial chemical reactions between Fe and the semiconductor, at the expense of introducing coherency strain and tilted epitaxy of the Fe. In the case of rare earths, intermediate seed films of rare earth trifluorides, grown onto GaAs(111(-)) provided a template for growth of c-axis oriented rare earth films and sandwich structures. These methods have enabled the effects of coherency strain on magnetic properties of Fe and rare earths to be investigated. Using an automated X-ray photoelectron diffraction (XPD) system we have investigated the growth and interfacial mixing of several key epitaxial systems including Co/Pt, Co/Ag, NdF3/LaF3 and Pt/GaAs. Interfacial mixing in the interfaces of Co/Pt superlattices was confirmed, resulting in an alloyed region containing the ordered L12 phase: CoPt3. Spin-polarized photoelectron diffraction (SPPD) experiments on MnF2 suggest a new , high-temperature magnetic ordering transition at 380K which is 313K above the Neel temperature.

Synthesis and Properties of Epitaxial Thin Films of Pr[2]Ir[2]O[7]and Mn[3]XN (X

Synthesis and Properties of Epitaxial Thin Films of Pr[2]Ir[2]O[7]and Mn[3]XN (X PDF Author: Lu Guo
Publisher:
ISBN:
Category :
Languages : en
Pages : 97

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Frustrated antiferromagnetic (AFM) systems exhibit a strong correlation between the lattice, spin, and charge. Extensive studies have been performed to understand frustrated AFMs in bulk. However, studies on frustrated AFM thin films are limited due to challenges in the growth of high-quality samples. Due to a large number of energy degenerate spin states, frustrated AFM configurations are sensitive to external perturbations such as strain, structural defects or chemical disordering. Thus, epitaxial AFM thin films are the prerequisites for understanding the intrinsic magnetic properties and ground states of the spin configurations of the antiferromagnetic systems. In this work, pyrochlore Pr2Ir2O7 and Mn-based antiperovskite epitaxial thin films are chosen for study as prototypical 3D and 2D frustrated AFM systems. To address the synthetic challenges of epitaxial Pr2Ir2O7 thin films, we combine thermodynamic analysis of the Pr-Ir-O2 system with experimental results from the conventional physical vapor deposition (PVD) technique of co-sputtering. Thermodynamic calculations indicate that high deposition temperatures and high partial pressures of gas species O2(g) and IrO3(g) are required to stabilize Pr2Ir2O7. Furthermore, we find that the gas species partial pressure requirements are beyond those achievable by any conventional PVD technique. Instead, we were able to synthesize weberite-like structure pure-phase Pr3IrO7 thin films on the (111) YSZ substrates by magnetron sputtering in situ. Thus, we suggest high-pressure techniques, in particular chemical vapor deposition (CVD), as a route to the synthesis of Pr2Ir2O7, as they can support thin film deposition under the high pressure needed for in situ stabilization of pyrochlore Pr2Ir2O7. As an alternative approach, we have successfully grown epitaxial pyrochlore Pr2Ir2O7 thin films on (111) oriented yttrium stabilized zirconia (YSZ) single crystal substrates via solid phase epitaxy (SPE). While bulk Pr2Ir2O7 shows a spontaneous hysteretic Hall effect below 1.5 K, we observed the effect at elevated temperatures up to 15 K in epitaxial thin films. We conclude that the elevated-temperature spontaneous Hall effect is caused by a topological effect originating either from the Ir or Pr sublattice, with interaction strength enhanced by the Ir local moments. We have also grown high quality epitaxial thin films of the 2D frustrated AFM system Mn3XN (X=Ga and Ni) in situ by reactive magnetron sputtering with high pressure RHHED. We have characterized the thin films by x-ray diffraction measurements, Hall measurements, and magnetization measurements to investigate the strong lattice-spin-electron correlation. The high-quality Pr2Ir2O7 and Mn3XN (X=Ga and Ni) epitaxial thin films and heterostructures will provide a fertile platform for strain engineering, heterostructure design, and artificial structure design for probing and manipulating AFM spin configurations and developing spintronic device applications.

Strain Engineering of Magnetic Anisotropy

Strain Engineering of Magnetic Anisotropy PDF Author: David Michael Carr
Publisher:
ISBN:
Category :
Languages : en
Pages : 376

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Handbook of Magnetic Materials

Handbook of Magnetic Materials PDF Author: Ekkes H. Brück
Publisher: Elsevier
ISBN: 0128210249
Category : Technology & Engineering
Languages : en
Pages : 216

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Book Description
Handbook of Magnetic Materials, Volume 29, highlights new advances in the field, with this new volume presenting interesting chapters written by an international board of authors on topics such as spin-orbit torque. - Provides the authority and expertise of leading contributors from an international board of authors - Presents the latest release in the Handbook of Magnetic Materials series

Epitaxial Growth and Some Magnetic Properties of Ferromagnetic Films

Epitaxial Growth and Some Magnetic Properties of Ferromagnetic Films PDF Author: M. Saiyid Uz Zafer
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ISBN:
Category :
Languages : en
Pages :

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Concise Encyclopedia of Semiconducting Materials & Related Technologies

Concise Encyclopedia of Semiconducting Materials & Related Technologies PDF Author: S. Mahajan
Publisher: Elsevier
ISBN: 1483286576
Category : Technology & Engineering
Languages : en
Pages : 607

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Book Description
The development of electronic materials and particularly advances in semiconductor technology have played a central role in the electronics revolution by allowing the production of increasingly cheap and powerful computing equipment and advanced telecommunications devices. This Concise Encyclopedia, which incorporates relevant articles from the acclaimed Encyclopedia of Materials Science and Engineering as well as newly commissioned articles, emphasizes the materials aspects of semiconductors and the technologies important in solid-state electronics. Growth of bulk crystals and epitaxial layers are discussed in the volume and coverage is included of defects and their effects on device behavior. Metallization and passivation issues are also covered. Over 100 alphabetically arranged articles, written by world experts in the field, are each intended to serve as the first source of information on a particular aspect of electronic materials. The volume is extensively illustrated with photographs, diagrams and tables. A bibliography is provided at the end of each article to guide the reader to recent literature. A comprehensive system of cross-references, a three-level subject index and an alphabetical list of articles are included to aid readers in the abstraction of information.