Enhanced Reactive Magnetron Sputtering of Aluminum Nitride PDF Download
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Author: Nathaniel Mark Williams
Publisher:
ISBN:
Category : Dielectric films
Languages : en
Pages : 296
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Author: Nathaniel Mark Williams
Publisher:
ISBN:
Category : Dielectric films
Languages : en
Pages : 296
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Author: Al-Ahsan Talukder
Publisher:
ISBN:
Category : Electronic dissertations
Languages : en
Pages : 0
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Magnetron sputtering is a popular vacuum plasma coating technique used for depositing metals, dielectrics, semiconductors, alloys, and compounds onto a wide range of substrates. In this work, we present two popular types of magnetron sputtering, i.e., pulsed DC and RF magnetron sputtering, for depositing piezoelectric aluminum nitride (AlN) thin films with high Young's modulus. The effects of important process parameters on the plasma I-V characteristics, deposition rate, and the properties of the deposited AlN films, are studied comprehensively. The effects of these process parameters on Young's modulus of the deposited films are also presented. Scanning electron microscope imaging revealed a c-axis oriented columnar growth of AlN. Performance of surface acoustic devices, utilizing the AlN films deposited by magnetron sputtering, are also presented, which confirms the differences in qualities and microstructures of the pulsed DC and RF sputtered films. The RF sputtered AlN films showed a denser microstructure with smaller grains and a smoother surface than the pulsed DC sputtered films. However, the deposition rate of RF sputtering is about half of the pulsed DC sputtering process. We also present a novel ion source enhanced pulsed DC magnetron sputtering for depositing high-quality nitrogen-doped zinc telluride (ZnTe:N) thin films. This ion source enhanced magnetron sputtering provides an increased deposition rate, efficient N-doping, and improved electrical, structural, and optical properties than the traditional magnetron sputtering. Ion source enhanced deposition leads to ZnTe:N films with smaller lattice spacing and wider X-ray diffraction peak, which indicates denser films with smaller crystallites embedded in an amorphous matrix.
Author: Alvin G. Randolph
Publisher:
ISBN:
Category : Aluminum nitride
Languages : en
Pages : 160
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"Aluminum nitride thin films ( -1000 A) have been deposited on silicon substrate by re active sputtering using Al target in 1 : 1 Ar:N2 environment. The atomic force microscopy examination revealed continuous microcrystalline film structure. The Auger electron spectroscopic analysis shows the presence of oxygen in the films. The annealing at 850 C in nitrogen is found to cause recrystallinization and, by FTIR analysis, further oxidation of the films. The films can be characterized as lossy dielectrics with relative permittivity ~ 10, higher than the bulk value of 8.9. Annealing the films is found to reduce anion vacancies and improve the dielectric strength within a range of a few MV/cm in these thin films. Optical constants, n & k, have been obtained from reflectance and transmittance spec tra (190-900 nm) of films on fused silica. The results indicate the presence of a low energy absorption tail, and exponential absorption that is proportional to degree of disorder in the film. The average defect density of the film as deposited was 1.1 x 10^20 cm"3. Annealing the film at 760 C increased the degree of disorder resulting in an average defect density of 3.4 x 10^20 cm^-3. Subsequent annealing at 800 C and 850 C systematically decreased the degree of disorder and the average defect density. The real part of permittivity (e1) of the annealed films over this frequency range varies approximately +-0.5 from the e(infinity) of 4.84"--Abstract.
Author: Filipe Vaz
Publisher: Bentham Science Publishers
ISBN: 1608051560
Category : Technology & Engineering
Languages : en
Pages : 363
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Book Description
Oxynitride thin film technology is rapidly impacting a broad spectrum of applications, ranging from decorative functions (through optoelectronics) to corrosion resistance. Developing a better understanding of the relationships between deposition processes, structure and composition of the deposited films is critical to the continued evolution of these applications. This e-book provides valuable information about the process modeling, fabrication and characterization of metallic oxynitride-based thin films produced by reactive sputtering and some related deposition processes. Its contents are spread in twelve main and concise chapters through which the book thoroughly reviews the bases of oxynitride thin film technology and deposition processes, sputtering processes and the resulting behaviors of these oxynitride thin films. More importantly, the solutions for the growth of oxynitride technology are given in detail with an emphasis on some particular compounds. This is a valuable resource for academic learners studying materials science and industrial coaters, who are concerned not only about fundamental aspects of oxynitride synthesis, but also by their innate material characteristics.
Author: William A. Carrington
Publisher:
ISBN:
Category :
Languages : en
Pages : 146
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Author: Peter Y. Hsieh
Publisher:
ISBN: 9781423552901
Category :
Languages : en
Pages : 61
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Microelectromechanical systems (MEMS) often incorporate piezoelectric thin films to actuate and detect motion of mechanical structures. Aluminum nitride is advantageous for MEMS use because it can be deposited at low temperatures, is easily patterned using conventional photo lithographic techniques, and is compatible with CMOS contaminant requirements for silicon IC foundries. In this work, AlN thin films were deposited on silicon for use in a MEMS ultrasonic resonator. The resonator is configured as a gravimetric chemical sensor. A rotatable central composite designed experiment was performed to optimize film properties affecting device performance: film crystallinity, stress, and uniformity. Film property response characterization was conducted with x-ray diffractometry, spectroscopic ellipsometry, and surface profilometry. Optimization of film deposition parameters improved AlN film properties in the MEMS sensors. Film property characterization using response surface methodology indicated microstructural changes due to sputtered particle bombardment of the growing film surface. Surface morphology of the sputtered AlN films was assessed using tapping mode atomic force microscopy and scanning electron microscopy. Energetic particle bombardment of the growing film surface helped to yield dense crystalline films with zone T microstructure. Thermalization of the impinging particle flux resulted in voided films with zone 1 microstructure with inferior film properties. Correlation between film crystallinity and oxygen content was explored with x-ray photoelectron spectrometry. Changes in film microstructure and composition are correlated with variations in deposition parameters. Adatom mobility during film growth appears to play an important role in determining final film properties.
Author: Rajan Sharad Naik
Publisher:
ISBN:
Category :
Languages : en
Pages : 14
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Author: Masood Hasheminiasari
Publisher:
ISBN:
Category : Aluminum nitride
Languages : en
Pages : 168
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Author: Charlene Jean Gawlak Kubiak
Publisher:
ISBN:
Category : Sputtering (Physics)
Languages : en
Pages : 264
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Author:
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 934
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