Author: Jaeyoung Choi
Publisher:
ISBN:
Category :
Languages : en
Pages : 224

Get Book Here

Book Description

Author:
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 768

Get Book Here

Book Description

Author: M. K. Jayaraj
Publisher: Springer Nature
ISBN: 9811533148
Category : Technology & Engineering
Languages : en
Pages : 348

Get Book Here

Book Description
This book primarily covers the fundamental science, synthesis, characterization, optoelectronic properties, and applications of metal oxide nanomaterials. It discusses the basic aspects of synthetic procedures and fabrication technologies, explains the related experimental techniques and also elaborates on the current status of nanostructured oxide materials and related devices. Two major aspects of metal oxide nanostructures – their optical and electrical properties – are described in detail. The first five chapters focus on the optical characteristics of semiconducting materials, especially metal oxides at the nanoscale. The following five chapters discuss the electrical properties observed in metal oxide-based semiconductors and the status quo of device-level developments in a variety of applications such as sensors, transistors, dilute magnetic semiconductors, and dielectric materials. The basic science and mechanism behind the optoelectronic phenomena are explained in detail, to aid readers interested in the structure–property symbiosis in semiconducting nanomaterials. In short, the book offers a valuable reference guide for researchers and academics in the areas of material science and semiconductor technology, especially nanophotonics and electronics.

Author: Joanna McKittrick
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 392

Get Book Here

Book Description
Luminescent materials are of interest to members of the spectroscopic, basic science, engineering and display communities. This book presents a wide range of topics from basic research of fluorescence to applications-driven research on phosphors and scintillators. Papers on various luminescent, fluorescent or phosphorescent mechanisms arising in inorganic crystalline and noncrystalline materials, as well as in organic materials, are featured. The use of fluorescence as a sensing technique has emerged as a sensitive and noninvasive way to probe biological activity or measure physical phenomena. To that end, progress in understanding fluorescence, the development of novel applications of fluorescence, and novel material structures are addressed. Phosphors for the emerging flat-panel-display industry are also highlighted. Topics include: inorganic phosphors; thin-film phosphors; synthesis, processing and characterization; mechanisms and defects; organic luminescence and theory and luminescence sensors.

Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :

Get Book Here

Book Description
The electronic, optical and luminescent properties of europium doped wide band gap oxide thin films and the electronic properties of indium gallium zinc oxide (IGZO), a novel amorphous oxide semiconductor were investigated. The thin films of europium doped gallium and gadolinium oxides and indium gallium zinc oxide were deposited on c-axis oriented sapphire substrates by Pulsed Laser Deposition at various conditions of temperature, pressure and doping concentration. Europium doped gallium oxide was found to be in beta phase with monoclinic crystal structure and the films exhibited intense red emission under cathode ray excitation with a peak wavelength of emission at 611 nm which corresponds to the transitions from 5D0 to 7F2 levels in europium. Europium doped gadolinium oxide thin films were found to exhibit two different phases (cubic and monoclinic) with the one of the phases being dominant depending on the growth conditions. The peak wavelength of emission was either 611 nm or 613 nm depending on the phase of the films. The amorphous indium gallium zinc oxide thin films were found to exhibit very high hall mobilities of the order of ̃15 cm2∙V−1∙s−1 and the conductivity could be controlled over several orders of magnitude from 5 x 10−3 S∙cm−1 to 10 S∙cm−1 in the amorphous phase. Annealing the films in presence of air was found to decrease the carrier concentration of the films due the incorporation of oxygen in the films thereby filling up the oxygen vacancies. Applications of amorphous indium gallium zinc oxide include Transparent Thin Film Transistors and use as transparent conducting oxide for optoelectronic devices.

Author:
Publisher:
ISBN:
Category : Information display devices
Languages : en
Pages : 372

Get Book Here

Book Description

Author:
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 456

Get Book Here

Book Description

Author:
Publisher:
ISBN:
Category : Thin films
Languages : en
Pages : 690

Get Book Here

Book Description

Author:
Publisher:
ISBN:
Category : Engineering
Languages : en
Pages : 634

Get Book Here

Book Description

Author:
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 628

Get Book Here

Book Description