Engineered Heterostructures of 6.1 A III-V Semiconductors for Advanced Electronic and Optoelectronic Applications PDF Download
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Category :
Languages : en
Pages : 11
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Book Description
Heterostructures formed from III-V semiconductors with the 6.1 lattice spacing "InAs, GaSb, AlSb and related alloys" have attracted significant interest because of their potential to define a new 'state of the art' in applications including 100 GHz high-speed logic circuits, terahertz transistors, sensitive infrared detectors and mid-infrared semiconductor lasers. In this paper, we describe the ongoing work at the Naval Research Laboratory to develop the materials growth and fabrication technology for a variety of 6.1 -based devices that have the potential to revolutionize infrared optoelectronics and low-power high-speed electronics.
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Category :
Languages : en
Pages : 11
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Book Description
Heterostructures formed from III-V semiconductors with the 6.1 lattice spacing "InAs, GaSb, AlSb and related alloys" have attracted significant interest because of their potential to define a new 'state of the art' in applications including 100 GHz high-speed logic circuits, terahertz transistors, sensitive infrared detectors and mid-infrared semiconductor lasers. In this paper, we describe the ongoing work at the Naval Research Laboratory to develop the materials growth and fabrication technology for a variety of 6.1 -based devices that have the potential to revolutionize infrared optoelectronics and low-power high-speed electronics.
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Category :
Languages : en
Pages : 12
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We have investigated novel semiconductor growth, materials, processes and devices. Gaseous source development for metalorganic molecular beam epitaxy (MOMBE) and metalorganic chemical vapor deposition (MOCVD) has been studied (Stillman). Silicon concentrations greater than 1 x 10(exp 19)/cu cm have been demonstrated using SiBr(4) by MOMBE and semi-insulating InP layers with resistivities greater than 1 x 10(exp 8) ohm-cm have been produced by using CCl(4) by MOCVD. High power and high perfomance semiconductor lasers and laser arrays have also been studied (Coleman). Several advanced processing techniques including reactive ion etching and e-beam lithography have been used to fabricate these lasers. In addition, the development of selective area epitaxy by MOCVD enables integration of lasers with electrical components for optoelectronic circuits on a single chip. Finally, use of inpurity induced layer disordering (IILD) and native oxides on high Al content compound semiconductors have been used to develop novel semiconductor laser devices (Holonyak). Microdisk lasers have been demonstrated using the IILD process to define curved geometry lasers. The native oxide has been used in vertical cavity surface emitting lasers VCSELs to define the current flow and to fabricate high-contrast distributed Bragg reflectors (DBRs).
Author: G. E. Stillman
Publisher:
ISBN:
Category : Crystal growth
Languages : en
Pages :
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Author: Michael A Stroscio
Publisher: World Scientific
ISBN: 9814486558
Category : Technology & Engineering
Languages : en
Pages : 244
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Book Description
This volume provides valuable summaries on many aspects of advanced semiconductor heterostructures and highlights the great variety of semiconductor heterostructures that has emerged since their original conception. As exemplified by the chapters in this book, recent progress on advanced semiconductor heterostructures spans a truly remarkable range of scientific fields with an associated diversity of applications. Some of these applications will undoubtedly revolutionize critically important facets of modern technology. At the heart of these advances is the ability to design and control the properties of semiconductor devices on the nanoscale. As an example, the intersubband lasers discussed in this book have a broad range of previously unobtainable characteristics and associated applications as a result of the nanoscale dimensional control of the underlying semiconductor heterostructures. As this book illustrates, an astounding variety of heterostructures can be fabricated with current technology; the potentially widespread use of layered quantum dots fabricated with nanoscale precision in biological applications opens up exciting advances in medicine. In addition, many more excellent examples of the remarkable impact being made through the use of semiconductor heterostructures are given. The summaries in this volume provide timely insights into what we know now about selected areas of advanced semiconductor heterostructures and also provide foundations for further developments.
Author: Mohammad Karbalaei Akbari
Publisher: CRC Press
ISBN: 1000072525
Category : Technology & Engineering
Languages : en
Pages : 277
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Book Description
Offering perspective on both the scientific and engineering aspects of 2D semiconductors, Ultrathin Two-Dimensional Semiconductors for Novel Electronic Applications discusses how to successfully engineer 2D materials for practical applications. It also covers several novel topics regarding 2D semiconductors which have not yet been discussed in any other publications. Features: Provides comprehensive information and data about wafer-scale deposition of 2D semiconductors, ranging from scientific discussions up to the planning of experiments and reliability testing of the fabricated samples Precisely discusses wafer-scale ALD and CVD of 2D semiconductors and investigates various aspects of deposition techniques Covers the new group of 2D materials synthesized from surface oxide of liquid metals and also explains the device fabrication and post-treatment of these 2D nanostructures Addresses a wide range of scientific and practical applications of 2D semiconductors and electronic and optoelectronic devices based on these nanostructures Offers novel coverage of 2D heterostructures and heterointerfaces and provides practical information about fabrication and application of these heterostructures Introduces the latest advancement in fabrication of novel memristors, artificial synapses and sensorimotor devices based on 2D semiconductors This work offers practical information valuable for engineering applications that will appeal to researchers, academics, and scientists working with and interested in developing an array of semiconductor electronic devices.
Author: Kyle Marshall McNicholas
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
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Book Description
The boundaries of semiconductor heterostructure device design are often defined by the epitaxial incompatibility of semiconductor materials. One avenue to expand these boundaries is the exploration of new materials that can be expitaxially incorporated with conventional semiconductors to enhance or extend device performance. Here we present our work on two emerging epitaxial materials, the highly-mismatch alloy system B [subscript x] Ga [subscript 1-x] As and quaternary alloys of the rare-earth pnictides. The boron pnictides (B-V) remain one of the least explored III-V materials systems, with many fundamental properties still awaiting experimental investigation. The small lattice constants of the B-V compounds result in greater than 3.4% tensile mismatch with conventional semiconductor substrates, offering unique opportunities for strain engineering in III-V heterostructures via mixed boron-III-V alloys. With sufficient boron concentrations, these materials can even be lattice-matched to Si, potentially providing a new avenue for monolithic integration of strain-free, direct-bandgap layers with silicon. The B concentrations reported in these alloys have thus far been restricted by solid solubility limits to dilute amounts. We demonstrate that a highly-kinetically limited growth regime enables near unity substitution boron incorporation outside the dilute limit, with measured boron concentrations greater than 2X those reported in the literature, large enough for the growth of coherent layers on Si. The optimized growth regime presented also facilitated the first characterization of these compounds outside the dilute regime, including composition dependent changes in the energy gap, dopant activation and transport, and prototype photodetector devices. The rare-earth pnictides (RE-V) are excellent candidates for the epitaxial integration of metallic layers in heterostructure devices. Many of these compounds are rock-salt structured semimetals that form abrupt and thermodynamically stable epitaxial interfaces with conventional III-V semiconductors. Furthermore, the potential to tailor the properties of these compounds to specific applications has been demonstrated through alloying, with broad tunability of the optical/electrical properties observed in alloys of LaLuAs. We present our efforts to extend these tunable metal layers to arbitrary substrates through the growth of quaternary RE-V alloys. We first demonstrate the epitaxial growth of GdAs, then use GdAs to demonstrate complete miscibility of the quaternary alloy LaGdLuAs while remaining lattice-matched to InP. Our observations indicate that the tunable properties observed in LaLuAs persist in these quaternary alloys. We also investigate the effects of growth conditions on the surface morphology of RE-V layers and demonstrate that under non-ideal conditions excess group-III elements can accumulate as nanostructures at the surface of these layers. We identified ideal growth conditions to mitigate the formation of these nanostructures
Author: Pramoda Kumar Nayak
Publisher: BoD – Books on Demand
ISBN: 9535125540
Category : Technology & Engineering
Languages : en
Pages : 282
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Book Description
There are only a few discoveries and new technologies in materials science that have the potential to dramatically alter and revolutionize our material world. Discovery of two-dimensional (2D) materials, the thinnest form of materials to ever occur in nature, is one of them. After isolation of graphene from graphite in 2004, a whole other class of atomically thin materials, dominated by surface effects and showing completely unexpected and extraordinary properties, has been created. This book provides a comprehensive view and state-of-the-art knowledge about 2D materials such as graphene, hexagonal boron nitride (h-BN), transition metal dichalcogenides (TMD) and so on. It consists of 11 chapters contributed by a team of experts in this exciting field and provides latest synthesis techniques of 2D materials, characterization and their potential applications in energy conservation, electronics, optoelectronics and biotechnology.
Author: Meiyong Liao
Publisher: Elsevier
ISBN: 0128172568
Category : Technology & Engineering
Languages : en
Pages : 503
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Book Description
Ultra-wide Bandgap Semiconductors (UWBG) covers the most recent progress in UWBG materials, including sections on high-Al-content AlGaN, diamond, B-Ga2O3, and boron nitrides. The coverage of these materials is comprehensive, addressing materials growth, physics properties, doping, device design, fabrication and performance. The most relevant and important applications are covered, including power electronics, RF electronics and DUV optoelectronics. There is also a chapter on novel structures based on UWBG, such as the heterojunctions, the low-dimensional structures, and their devices. This book is ideal for materials scientists and engineers in academia and R&D searching for materials superior to silicon carbide and gallium nitride. Provides a one-stop resource on the most promising ultra-wide bandgap semiconducting materials, including high-Al-content AlGaN, diamond, β-Ga2O3, boron nitrides, and low-dimensional materials Presents comprehensive coverage, from materials growth and properties, to device design, fabrication and performance Features the most relevant applications, including power electronics, RF electronics and DUV optoelectronics
Author: Debdeep Jena
Publisher: Springer Science & Business Media
ISBN: 0387368310
Category : Science
Languages : en
Pages : 523
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Book Description
Polarization Effects in Semiconductors: From Ab Initio Theory to Device Applications presents the latest understanding of the solid state physics, electronic implications and practical applications of the unique spontaneous or pyro-electric polarization charge of wurtzite compound semiconductors, and associated piezo-electric effects in strained thin film heterostructures. These heterostructures are used in wide band gap semiconductor based sensors, in addition to various electronic and opto-electronic semiconductor devices. The book covers the ab initio theory of polarization in cubic and hexagonal semiconductors, growth of thin film GaN, GaN/AlGaN GaAlN/ AlGaInN, and other nitrides, and SiC heterostructures. It discusses the effects of spontaneous and piezoelectric polarization on band diagrams and electronic properties of abrupt and compositionally graded heterostructures, electronic characterization of polarization-induced charge distributions by scanning-probe spectroscopies, and gauge factors and strain effects. In addition, polarization in extended defects, piezo-electric strain/charge engineering, and application to device design and processing are covered. The effects of polarization on the fundamental electron transport properties, and on the basic optical transitions are described. The crucial role of polarization in devices such as high electron mobility transistors (HEMTs) and light-emitting diodes (LEDs) is covered. The chapters are authored by professors and researchers in the fields of physics, applied physics and electrical engineering, who worked for 5 years under the "Polarization Effects in Semiconductors" DOD funded Multi Disciplinary University Research Initiative. This book will be of interest to graduate students and researchers working in the field of wide-bandgap semiconductor physics and their device applications. It will also be useful for practicing engineers in the field of wide-bandgap semiconductor device research and development.
Author:
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ISBN:
Category : Aeronautics
Languages : en
Pages : 652
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