Energetics and Dynamics in Quantum Confined Semiconductor Nanostructures

Energetics and Dynamics in Quantum Confined Semiconductor Nanostructures PDF Author: Jessica Hoy
Publisher:
ISBN:
Category : Electronic dissertations
Languages : en
Pages : 164

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Book Description
The ability to tune the band-gap energies of semiconductor quantum dots, nanoplatelets, and quantum wires, their significant absorption cross sections, and high photoluminescence quantum yields make these nanostructures promising moieties for use in optoelectronic devices, solar concentrators, chemical sensors, and biological labels. The variable dynamics of the electron-hole pairs that occur within semiconductor nanostructures, however, can complicate the utility of these devices. The variability of the dynamics is born from the different paths accessible for the charge carriers to undergo. In this work, three pathways are proposed to be of primary consequence, namely, electronic intraband relaxation, coupling to surface-mediated processes, and tunneling to the external environment. The relative dominance of these paths will vary from sample to sample. More importantly, within a sample, the contributions of the available pathways are found to change with changes in excitation energy. To this end, I investigated the dependence of the ensemble photoluminescence (PL) quantum yields (QYs) on excitation energy for numerous semiconductor nanoparticles with quantum confinement in varying dimensions. A strong dependence of the PL QY on excitation energy is observed in quantum dots (QDs), nanoplatelets (NPLs), and quantum wires (QWs). The highest PL QYs are within the first 300 meV above the band edge, and there is a severe drop in the PL QY towards the highest excitation energies investigated, ~3.1 eV. These high PL QYs are 91 % for CdSe/ZnS QDs, 24 % in CdSe NPLs, which are dispersed in toluene and 25 % in CdTe/CdS QWs, which is dispersed in TOP. These values drop to 12, 8, and 8 % by 3.1 eV, respectively. There are some recognized trends to the shape of this dependency. Local minima in PL QY values occur when intraband relaxation is restricted and ligand or surface mediated transitions are available. These variations in PL QY are reduced when a shell is added to produce a type-I heterostructure. This trend is realized in both QDs and QWs. However, QWs are more weakly confined systems with large surface areas. Their saw-like densities of states that result from the long, unconfined dimension of the QWs and increased valence state mixing yields a higher density of states which leads to a smoother PL QY dependence of the excitation energy. The minimal undulations in the PL QYs that do still exist in these QWs, are further minimized with the addition of a shell to create a type-I heterostructure. Conversely, the pseudo-2D confinement and atomic flatness of NPLs results in narrow, discrete bands of states separated by large energies, ~ 200 meV. This electronic structure restricts intraband relaxation and promotes coupling to other pathways that sponsor non-radiative recombination even more efficiently than QDs. In all samples, exciting with high energies severely diminishes PL QYs as these energies generate highly excited charge-carriers that can access solvent/environmental pathways.

Energetics and Dynamics in Quantum Confined Semiconductor Nanostructures

Energetics and Dynamics in Quantum Confined Semiconductor Nanostructures PDF Author: Jessica Hoy
Publisher:
ISBN:
Category : Electronic dissertations
Languages : en
Pages : 164

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Book Description
The ability to tune the band-gap energies of semiconductor quantum dots, nanoplatelets, and quantum wires, their significant absorption cross sections, and high photoluminescence quantum yields make these nanostructures promising moieties for use in optoelectronic devices, solar concentrators, chemical sensors, and biological labels. The variable dynamics of the electron-hole pairs that occur within semiconductor nanostructures, however, can complicate the utility of these devices. The variability of the dynamics is born from the different paths accessible for the charge carriers to undergo. In this work, three pathways are proposed to be of primary consequence, namely, electronic intraband relaxation, coupling to surface-mediated processes, and tunneling to the external environment. The relative dominance of these paths will vary from sample to sample. More importantly, within a sample, the contributions of the available pathways are found to change with changes in excitation energy. To this end, I investigated the dependence of the ensemble photoluminescence (PL) quantum yields (QYs) on excitation energy for numerous semiconductor nanoparticles with quantum confinement in varying dimensions. A strong dependence of the PL QY on excitation energy is observed in quantum dots (QDs), nanoplatelets (NPLs), and quantum wires (QWs). The highest PL QYs are within the first 300 meV above the band edge, and there is a severe drop in the PL QY towards the highest excitation energies investigated, ~3.1 eV. These high PL QYs are 91 % for CdSe/ZnS QDs, 24 % in CdSe NPLs, which are dispersed in toluene and 25 % in CdTe/CdS QWs, which is dispersed in TOP. These values drop to 12, 8, and 8 % by 3.1 eV, respectively. There are some recognized trends to the shape of this dependency. Local minima in PL QY values occur when intraband relaxation is restricted and ligand or surface mediated transitions are available. These variations in PL QY are reduced when a shell is added to produce a type-I heterostructure. This trend is realized in both QDs and QWs. However, QWs are more weakly confined systems with large surface areas. Their saw-like densities of states that result from the long, unconfined dimension of the QWs and increased valence state mixing yields a higher density of states which leads to a smoother PL QY dependence of the excitation energy. The minimal undulations in the PL QYs that do still exist in these QWs, are further minimized with the addition of a shell to create a type-I heterostructure. Conversely, the pseudo-2D confinement and atomic flatness of NPLs results in narrow, discrete bands of states separated by large energies, ~ 200 meV. This electronic structure restricts intraband relaxation and promotes coupling to other pathways that sponsor non-radiative recombination even more efficiently than QDs. In all samples, exciting with high energies severely diminishes PL QYs as these energies generate highly excited charge-carriers that can access solvent/environmental pathways.

Electron and Photon Confinement in Semiconductor Nanostructures

Electron and Photon Confinement in Semiconductor Nanostructures PDF Author: Benoît Deveaud
Publisher: IOS Press
ISBN: 9781586033521
Category : Science
Languages : en
Pages : 584

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Book Description
The purpose of this course was to give an overview of the physics of artificial semiconductor structures confining electrons and photons. It furnishes the background for several applications in particular in the domain of optical devices, lasers, light emitting diodes or photonic crystals. The effects related to the microactivity polaritons, which are mixed electromagnetic radiation-exciton states inside a semiconconductor microactivity are covered. The study of the characteristics of such states shows strong relations with the domain of cavity quantum electrodynamics and thus with the investigation of some fundamental theoretical concepts.

Semiconductor Nanocrystals

Semiconductor Nanocrystals PDF Author: Alexander L. Efros
Publisher: Springer Science & Business Media
ISBN: 1475736770
Category : Technology & Engineering
Languages : en
Pages : 277

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Book Description
A physics book that covers the optical properties of quantum-confined semiconductor nanostructures from both the theoretical and experimental points of view together with technological applications. Topics to be reviewed include quantum confinement effects in semiconductors, optical adsorption and emission properties of group IV, III-V, II-VI semiconductors, deep-etched and self assembled quantum dots, nanoclusters, and laser applications in optoelectronics.

Semiconductor Quantum Dots

Semiconductor Quantum Dots PDF Author: Yasuaki Masumoto
Publisher: Springer Science & Business Media
ISBN: 9783540428053
Category : Science
Languages : en
Pages : 520

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Book Description
Growth of Self Organized Quantum Dots / J.-S. Lee / - Excitonic Structures and Optical Properties of Quantum Dots / Toshihide Takagahara / - Electron-Phonon Interactions in Semiconductor Quantum Dots / Toshihide Takagahara / - Micro-Imaging and Single Dot Spectroscopy of Self Assembled Quantum Dots / Mitsuru Sugisaki / - Persistent Spectral Hole Burning in Semiconductor Quantum Dots / Yasuaki Masumoto / - Dynamics of Carrier Relaxation in Self Assembled Quantum Dots / Ivan V. Ignatiev, Igor E. Kozin / - Resonant Two-Photon Spectroscopy of Quantum Dots / Alexander Baranov / - Homogeneous Width of Confined Excitons in Quantum Dots - Experimental / Yasuaki Masumoto / - Theory of Exciton Dephasing in Semiconductor Quantum Dots / Toshihide Takagahara / - Excitonic Optical Nonlinearity and Weakly Correlated Exciton-Pair States / Selvakumar V. Nair, Toshihide Takagahara / - Coulomb Effects in the Optical Spectra of Highly Excited Semiconductor Quantum Dots / Selvakumar V. Nair / - Device ...

Nanostructured and Photoelectrochemical Systems for Solar Photon Conversion

Nanostructured and Photoelectrochemical Systems for Solar Photon Conversion PDF Author: Mary D. Archer
Publisher: World Scientific
ISBN: 1860942555
Category : Technology & Engineering
Languages : en
Pages : 781

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Book Description
In this book, expert authors describe advanced solar photon conversion approaches that promise highly efficient photovoltaic and photoelectrochemical cells with sophisticated architectures on the one hand, and plastic photovoltaic coatings that are inexpensive enough to be disposable on the other. Their leitmotifs include light-induced exciton generation, junction architectures that lead to efficient exciton dissociation, and charge collection by percolation through mesoscale phases. Photocatalysis is closely related to photoelectrochemistry, and the fundamentals of both disciplines are covered in this volume.

Non-Equilibrium Dynamics of Semiconductors and Nanostructures

Non-Equilibrium Dynamics of Semiconductors and Nanostructures PDF Author: Kong-Thon Tsen
Publisher: CRC Press
ISBN: 1420027255
Category : Technology & Engineering
Languages : en
Pages : 272

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Book Description
The advent of the femto-second laser has enabled us to observe phenomena at the atomic timescale. One area to reap enormous benefits from this ability is ultrafast dynamics. Collecting the works of leading experts from around the globe, Non-Equilibrium Dynamics of Semiconductors and Nanostructures surveys recent developments in a variety of areas in ultrafast dynamics. In eight authoritative chapters illustrated by more than 150 figures, this book spans a broad range of new techniques and advances. It begins with a review of spin dynamics in a high-mobility two-dimensional electron gas, followed by the generation, propagation, and nonlinear properties of high-amplitude, ultrashort strain solitons in solids. The discussion then turns to nonlinear optical properties of nanoscale artificial dielectrics, optical properties of GaN self-assembled quantum dots, and optical studies of carrier dynamics and non-equilibrium optical phonons in nitride-based semiconductors. Rounding out the presentation, the book examines ultrafast non-equilibrium electron dynamics in metal nanoparticles, monochromatic acoustic phonons in GaAs, and electromagnetically induced transparency in semiconductor quantum wells. With its pedagogical approach and practical, up-to-date coverage, Non-Equilibrium Dynamics of Semiconductors and Nanostructures allows you to easily put the material into practice, whether you are a seasoned researcher or new to the field.

Quantum Wells, Wires and Dots

Quantum Wells, Wires and Dots PDF Author: Paul Harrison
Publisher: John Wiley & Sons
ISBN: 1118923340
Category : Science
Languages : en
Pages : 624

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Book Description
Quantum Wells, Wires and Dots provides all the essential information, both theoretical and computational, to develop an understanding of the electronic, optical and transport properties of these semiconductor nanostructures. The book will lead the reader through comprehensive explanations and mathematical derivations to the point where they can design semiconductor nanostructures with the required electronic and optical properties for exploitation in these technologies. This fully revised and updated 4th edition features new sections that incorporate modern techniques and extensive new material including: Properties of non-parabolic energy bands Matrix solutions of the Poisson and Schrödinger equations Critical thickness of strained materials Carrier scattering by interface roughness, alloy disorder and impurities Density matrix transport modelling Thermal modelling Written by well-known authors in the field of semiconductor nanostructures and quantum optoelectronics, this user-friendly guide is presented in a lucid style with easy to follow steps, illustrative examples and questions and computational problems in each chapter to help the reader build solid foundations of understanding to a level where they can initiate their own theoretical investigations. Suitable for postgraduate students of semiconductor and condensed matter physics, the book is essential to all those researching in academic and industrial laboratories worldwide. Instructors can contact the authors directly ([email protected] / [email protected]) for Solutions to the problems.

Semiconductor Nanophotonics

Semiconductor Nanophotonics PDF Author: Michael Kneissl
Publisher: Springer Nature
ISBN: 3030356566
Category : Technology & Engineering
Languages : en
Pages : 572

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Book Description
This book provides a comprehensive overview of the state-of-the-art in the development of semiconductor nanostructures and nanophotonic devices. It covers epitaxial growth processes for GaAs- and GaN-based quantum dots and quantum wells, describes the fundamental optical, electronic, and vibronic properties of nanomaterials, and addresses the design and realization of various nanophotonic devices. These include energy-efficient and high-speed vertical cavity surface emitting lasers (VCSELs) and ultra-small metal-cavity nano-lasers for applications in multi-terabus systems; silicon photonic I/O engines based on the hybrid integration of VCSELs for highly efficient chip-to-chip communication; electrically driven quantum key systems based on q-bit and entangled photon emitters and their implementation in real information networks; and AlGaN-based deep UV laser diodes for applications in medical diagnostics, gas sensing, spectroscopy, and 3D printing. The experimental results are accompanied by reviews of theoretical models that describe nanophotonic devices and their base materials. The book details how optical transitions in the active materials, such as semiconductor quantum dots and quantum wells, can be described using a quantum approach to the dynamics of solid-state electrons under quantum confinement and their interaction with phonons, as well as their external pumping by electrical currents. With its broad and detailed scope, this book is indeed a cutting-edge resource for researchers, engineers and graduate-level students in the area of semiconductor materials, optoelectronic devices and photonic systems.

Characterization of Semiconductor Heterostructures and Nanostructures

Characterization of Semiconductor Heterostructures and Nanostructures PDF Author: S. Sanguinetti
Publisher: Elsevier Inc. Chapters
ISBN: 012808345X
Category : Science
Languages : en
Pages : 75

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Book Description


Quantum Materials, Lateral Semiconductor Nanostructures, Hybrid Systems and Nanocrystals

Quantum Materials, Lateral Semiconductor Nanostructures, Hybrid Systems and Nanocrystals PDF Author: Detlef Heitmann
Publisher: Springer Science & Business Media
ISBN: 364210553X
Category : Technology & Engineering
Languages : en
Pages : 446

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Book Description
Semiconductor nanostructures are ideal systems to tailor the physical properties via quantum effects, utilizing special growth techniques, self-assembling, wet chemical processes or lithographic tools in combination with tuneable external electric and magnetic fields. Such systems are called "Quantum Materials".The electronic, photonic, and phononic properties of these systems are governed by size quantization and discrete energy levels. The charging is controlled by the Coulomb blockade. The spin can be manipulated by the geometrical structure, external gates and by integrating hybrid ferromagnetic emitters.This book reviews sophisticated preparation methods for quantum materials based on III-V and II-VI semiconductors and a wide variety of experimental techniques for the investigation of these interesting systems. It highlights selected experiments and theoretical concepts and gives such a state-of-the-art overview about the wide field of physics and chemistry that can be studied in these systems.