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Author: King-Ning Tu
Publisher: CRC Press
ISBN: 1003827381
Category : Technology & Engineering
Languages : en
Pages : 143
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Book Description
In this invaluable resource for graduate students and practicing professionals, Tu and Liu provide a comprehensive account of electromigration and give a practical guide on how to manage its effects in microelectronic devices, especially newer devices that make use of 3D architectures. In the era of big data and artificial intelligence, next-generation microelectronic devices for consumers must be smaller, consume less power, cost less, and, most importantly, have higher functionality and reliability than ever before. However, with miniaturization, the average current density increases, and so does the probability of electromigration failure. This book covers all critical elements of electromigration, including basic theory, various failure modes induced by electromigration, methods to prevent failure, and equations for predicting mean-time-to-failure. Furthermore, effects such as stress, Joule heating, current crowding, and oxidation on electromigration are covered, and the new and modified mean-time-to-failure equations based on low entropy production are given. Readers will be able to apply this information to the design and application of microelectronic devices to minimize the risk of electromigration-induced failure in microelectronic devices. This book essential for anyone who wants to understand these critical elements and minimize their effects. It is particularly valuable for both graduate students of electrical engineering and materials science engineering and engineers working in the semiconductor and electronic packaging technology industries.
Author: King-Ning Tu
Publisher: CRC Press
ISBN: 1003827381
Category : Technology & Engineering
Languages : en
Pages : 143
Get Book Here
Book Description
In this invaluable resource for graduate students and practicing professionals, Tu and Liu provide a comprehensive account of electromigration and give a practical guide on how to manage its effects in microelectronic devices, especially newer devices that make use of 3D architectures. In the era of big data and artificial intelligence, next-generation microelectronic devices for consumers must be smaller, consume less power, cost less, and, most importantly, have higher functionality and reliability than ever before. However, with miniaturization, the average current density increases, and so does the probability of electromigration failure. This book covers all critical elements of electromigration, including basic theory, various failure modes induced by electromigration, methods to prevent failure, and equations for predicting mean-time-to-failure. Furthermore, effects such as stress, Joule heating, current crowding, and oxidation on electromigration are covered, and the new and modified mean-time-to-failure equations based on low entropy production are given. Readers will be able to apply this information to the design and application of microelectronic devices to minimize the risk of electromigration-induced failure in microelectronic devices. This book essential for anyone who wants to understand these critical elements and minimize their effects. It is particularly valuable for both graduate students of electrical engineering and materials science engineering and engineers working in the semiconductor and electronic packaging technology industries.
Author: Jens Lienig
Publisher: Springer
ISBN: 3319735586
Category : Technology & Engineering
Languages : en
Pages : 171
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Book Description
The book provides a comprehensive overview of electromigration and its effects on the reliability of electronic circuits. It introduces the physical process of electromigration, which gives the reader the requisite understanding and knowledge for adopting appropriate counter measures. A comprehensive set of options is presented for modifying the present IC design methodology to prevent electromigration. Finally, the authors show how specific effects can be exploited in present and future technologies to reduce electromigration’s negative impact on circuit reliability.
Author: Cher Ming Tan
Publisher: World Scientific
ISBN: 9814273325
Category : Technology & Engineering
Languages : en
Pages : 312
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Book Description
Electromigration in ULSI Interconnections provides a comprehensive description of the electromigration in integrated circuits. It is intended for both beginner and advanced readers on electromigration in ULSI interconnections. It begins with the basic knowledge required for a detailed study on electromigration, and examines the various interconnected systems and their evolution employed in integrated circuit technology. The subsequent chapters provide a detailed description of the physics of electromigration in both Al- and Cu-based Interconnections, in the form of theoretical, experimental and numerical modeling studies. The differences in the electromigration of Al- and Cu-based interconnections and the corresponding underlying physical mechanisms for these differences are explained. The test structures, testing methodology, failure analysis methodology and statistical analysis of the test data for the experimental studies on electromigration are presented in a concise and rigorous manner. Methods of numerical modeling for the interconnect electromigration and their applications to the understanding of electromigration physics are described in detail with the aspects of material properties, interconnection design, and interconnect process parameters on the electromigration performances of interconnects in ULSI further elaborated upon. Finally, the extension of the studies to narrow interconnections is introduced, and future challenges on the study of electromigration are outlined and discussed.
Author: KV Subramanian
Publisher: Springer Science & Business Media
ISBN: 0387484337
Category : Technology & Engineering
Languages : en
Pages : 370
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Book Description
Even though the effect of lead contamination on human health has been known for decades, very little attention has been paid to lead-based solders used in electronics until recently. This comprehensive book examines all the important issues associated with lead-free electronic solder. It collects the work of researchers recognized for their significant scientific contributions in the area.
Author: Tao Li
Publisher: John Wiley & Sons
ISBN: 3527332715
Category : Technology & Engineering
Languages : en
Pages : 434
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Book Description
Unique in its scope, this book comprehensively combines various synthesis strategies with applications for nanogap electrodes. Clearly divided into four parts, the monograph begins with an introduction to molecular electronics and electron transport in molecular junctions, before moving on to a whole section devoted to synthesis and characterization. The third part looks at applications with single molecules or self-assembled monolayers, and the whole is rounded off with a section on interesting phenomena observed using molecular-based devices.
Author: Cemal Basaran
Publisher: Springer Nature
ISBN: 3030577724
Category : Science
Languages : en
Pages : 452
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Book Description
This text describes the mathematical formulation and proof of the unified mechanics theory (UMT) which is based on the unification of Newton’s laws and the laws of thermodynamics. It also presents formulations and experimental verifications of the theory for thermal, mechanical, electrical, corrosion, chemical and fatigue loads, and it discusses why the original universal laws of motion proposed by Isaac Newton in 1687 are incomplete. The author provides concrete examples, such as how Newton’s second law, F = ma, gives the initial acceleration of a soccer ball kicked by a player, but does not tell us how and when the ball would come to a stop. Over the course of Introduction to Unified Mechanics Theory, Dr. Basaran illustrates that Newtonian mechanics does not account for the thermodynamic changes happening in a system over its usable lifetime. And in this context, this book explains how to design a system to perform its intended functions safely over its usable life time and predicts the expected lifetime of the system without using empirical models, a process currently done using Newtonian mechanics and empirical degradation/failure/fatigue models which are curve-fit to test data. Written as a textbook suitable for upper-level undergraduate mechanics courses, as well as first year graduate level courses, this book is the result of over 25 years of scientific activity with the contribution of dozens of scientists from around the world including USA, Russia, Ukraine, Belarus, Spain, China, India and U.K.
Author: Cher Ming Tan
Publisher: Springer Science & Business Media
ISBN: 0857293109
Category : Technology & Engineering
Languages : en
Pages : 154
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Book Description
Applications of Finite Element Methods for Reliability Studies on ULSI Interconnections provides a detailed description of the application of finite element methods (FEMs) to the study of ULSI interconnect reliability. Over the past two decades the application of FEMs has become widespread and continues to lead to a much better understanding of reliability physics. To help readers cope with the increasing sophistication of FEMs’ applications to interconnect reliability, Applications of Finite Element Methods for Reliability Studies on ULSI Interconnections will: introduce the principle of FEMs; review numerical modeling of ULSI interconnect reliability; describe the physical mechanism of ULSI interconnect reliability encountered in the electronics industry; and discuss in detail the use of FEMs to understand and improve ULSI interconnect reliability from both the physical and practical perspective, incorporating the Monte Carlo method. A full-scale review of the numerical modeling methodology used in the study of interconnect reliability highlights useful and noteworthy techniques that have been developed recently. Many illustrations are used throughout the book to improve the reader’s understanding of the methodology and its verification. Actual experimental results and micrographs on ULSI interconnects are also included. Applications of Finite Element Methods for Reliability Studies on ULSI Interconnections is a good reference for researchers who are working on interconnect reliability modeling, as well as for those who want to know more about FEMs for reliability applications. It gives readers a thorough understanding of the applications of FEM to reliability modeling and an appreciation of the strengths and weaknesses of various numerical models for interconnect reliability.
Author: R. A. Mantz
Publisher: The Electrochemical Society
ISBN: 9781566775144
Category : Science
Languages : en
Pages : 1118
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Book Description
Author: Milton Ohring
Publisher: Academic Press
ISBN: 0080575528
Category : Technology & Engineering
Languages : en
Pages : 759
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Book Description
Reliability and Failure of Electronic Materials and Devices is a well-established and well-regarded reference work offering unique, single-source coverage of most major topics related to the performance and failure of materials used in electronic devices and electronics packaging. With a focus on statistically predicting failure and product yields, this book can help the design engineer, manufacturing engineer, and quality control engineer all better understand the common mechanisms that lead to electronics materials failures, including dielectric breakdown, hot-electron effects, and radiation damage. This new edition adds cutting-edge knowledge gained both in research labs and on the manufacturing floor, with new sections on plastics and other new packaging materials, new testing procedures, and new coverage of MEMS devices. Covers all major types of electronics materials degradation and their causes, including dielectric breakdown, hot-electron effects, electrostatic discharge, corrosion, and failure of contacts and solder joints New updated sections on "failure physics," on mass transport-induced failure in copper and low-k dielectrics, and on reliability of lead-free/reduced-lead solder connections New chapter on testing procedures, sample handling and sample selection, and experimental design Coverage of new packaging materials, including plastics and composites
Author: Yan Li
Publisher: Springer Nature
ISBN: 9811570906
Category : Technology & Engineering
Languages : en
Pages : 629
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Book Description
This book offers a comprehensive reference guide for graduate students and professionals in both academia and industry, covering the fundamentals, architecture, processing details, and applications of 3D microelectronic packaging. It provides readers an in-depth understanding of the latest research and development findings regarding this key industry trend, including TSV, die processing, micro-bumps for LMI and MMI, direct bonding and advanced materials, as well as quality, reliability, fault isolation, and failure analysis for 3D microelectronic packages. Images, tables, and didactic schematics are used to illustrate and elaborate on the concepts discussed. Readers will gain a general grasp of 3D packaging, quality and reliability concerns, and common causes of failure, and will be introduced to developing areas and remaining gaps in 3D packaging that can help inspire future research and development.
