Electrothermal Frequency References in Standard CMOS PDF Download
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Author: S. Mahdi Kashmiri
Publisher: Springer Science & Business Media
ISBN: 1461464730
Category : Technology & Engineering
Languages : en
Pages : 219
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Book Description
This book describes an alternative method of realizing accurate on-chip frequency references in standard CMOS processes. This method exploits the thermal-diffusivity of silicon, i.e. the rate at which heat diffuses through a silicon substrate. This is the first book describing the design of such electrothermal frequency references. It includes the necessary theory, supported by practical realizations that achieve inaccuracies as low as 0.1% and thus demonstrate the feasibility of this approach. The book also includes several circuit and system-level solutions to the precision circuit design challenges encountered during the design of such frequency references.
Author: S. Mahdi Kashmiri
Publisher: Springer Science & Business Media
ISBN: 1461464730
Category : Technology & Engineering
Languages : en
Pages : 219
Get Book Here
Book Description
This book describes an alternative method of realizing accurate on-chip frequency references in standard CMOS processes. This method exploits the thermal-diffusivity of silicon, i.e. the rate at which heat diffuses through a silicon substrate. This is the first book describing the design of such electrothermal frequency references. It includes the necessary theory, supported by practical realizations that achieve inaccuracies as low as 0.1% and thus demonstrate the feasibility of this approach. The book also includes several circuit and system-level solutions to the precision circuit design challenges encountered during the design of such frequency references.
Author: Valentijn De Smedt
Publisher: Springer
ISBN: 3319090038
Category : Technology & Engineering
Languages : en
Pages : 422
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Book Description
This book investigates the possible circuit solutions to overcome the temperature and supply voltage-sensitivity of fully-integrated time references for ultra-low-power communication in wireless sensor networks. The authors provide an elaborate theoretical introduction and literature study to enable full understanding of the design challenges and shortcomings of current oscillator implementations. Furthermore, a closer look to the short-term as well as the long-term frequency stability of integrated oscillators is taken. Next, a design strategy is developed and applied to 5 different oscillator topologies and 1 sensor interface. All 6 implementations are subject to an elaborate study of frequency stability, phase noise and power consumption. In the final chapter all blocks are compared to the state of the art.
Author: Sining Pan
Publisher: Springer Nature
ISBN: 3030952843
Category : Technology & Engineering
Languages : en
Pages : 162
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Book Description
This book describes the background, principles, implementations, characterization, and future trends of temperature sensors made from silicon resistors in CMOS technology, including their readout circuits. Readers will benefit from the latest research of CMOS temperature sensors, and could learn about various precision analog techniques such as phase detection, continuous-time ΔΣ ADC, zoom ADC, FIR-DAC, dynamic element matching, OTA linearization, etc.
Author: Fabio Sebastiano
Publisher: Springer Science & Business Media
ISBN: 1461434831
Category : Technology & Engineering
Languages : en
Pages : 176
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Book Description
This book describes the use of low-power low-cost and extremely small radios to provide essential time reference for wireless sensor networks. The authors explain how to integrate such radios in a standard CMOS process to reduce both cost and size, while focusing on the challenge of designing a fully integrated time reference for such radios. To enable the integration of the time reference, system techniques are proposed and analyzed, several kinds of integrated time references are reviewed, and mobility-based references are identified as viable candidates to provide the required accuracy at low-power consumption. Practical implementations of a mobility-based oscillator and a temperature sensor are also presented, which demonstrate the required accuracy over a wide temperature range, while drawing 51-uW from a 1.2-V supply in a 65-nm CMOS process.
Author: National Institute of Standards and Technology (U.S.)
Publisher:
ISBN:
Category :
Languages : en
Pages : 1162
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Book Description
Author: Mike Wens
Publisher: Springer Science & Business Media
ISBN: 940071436X
Category : Technology & Engineering
Languages : en
Pages : 316
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Book Description
CMOS DC-DC Converters aims to provide a comprehensive dissertation on the matter of monolithic inductive Direct-Current to Direct-Current (DC-DC) converters. For this purpose seven chapters are defined which will allow the designer to gain specific knowledge on the design and implementation of monolithic inductive DC-DC converters, starting from the very basics.
Author: Micheal A.P. Pertijs
Publisher: Springer Science & Business Media
ISBN: 1402052588
Category : Technology & Engineering
Languages : en
Pages : 308
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Book Description
This book describes the analysis and design of precision temperature sensors in CMOS IC technology, focusing on so-called smart temperature sensors, which provide a digital output signal that can be readily interpreted by a computer. The text shows how temperature characteristics can be used to obtain an accurate digital temperature reading. The book ends with a detailed description of three prototypes, one of which achieves the best performance reported to date.
Author: Masayoshi Esashi
Publisher: John Wiley & Sons
ISBN: 3527823255
Category : Technology & Engineering
Languages : en
Pages : 528
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Book Description
Explore heterogeneous circuit integration and the packaging needed for practical applications of microsystems MEMS and system integration are important building blocks for the “More-Than-Moore” paradigm described in the International Technology Roadmap for Semiconductors. And, in 3D and Circuit Integration of MEMS, distinguished editor Dr. Masayoshi Esashi delivers a comprehensive and systematic exploration of the technologies for microsystem packaging and heterogeneous integration. The book focuses on the silicon MEMS that have been used extensively and the technologies surrounding system integration. You’ll learn about topics as varied as bulk micromachining, surface micromachining, CMOS-MEMS, wafer interconnection, wafer bonding, and sealing. Highly relevant for researchers involved in microsystem technologies, the book is also ideal for anyone working in the microsystems industry. It demonstrates the key technologies that will assist researchers and professionals deal with current and future application bottlenecks. Readers will also benefit from the inclusion of: A thorough introduction to enhanced bulk micromachining on MIS process, including pressure sensor fabrication and the extension of MIS process for various advanced MEMS devices An exploration of epitaxial poly Si surface micromachining, including process condition of epi-poly Si, and MEMS devices using epi-poly Si Practical discussions of Poly SiGe surface micromachining, including SiGe deposition and LP CVD polycrystalline SiGe A concise treatment of heterogeneously integrated aluminum nitride MEMS resonators and filters Perfect for materials scientists, electronics engineers, and electrical and mechanical engineers, 3D and Circuit Integration of MEMS will also earn a place in the libraries of semiconductor physicists seeking a one-stop reference for circuit integration and the practical application of microsystems.
Author: Chris Toumazou
Publisher: IET
ISBN: 9780863412974
Category : Technology & Engineering
Languages : en
Pages : 676
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Book Description
Analogue IC Design has become the essential title covering the current-mode approach to integrated circuit design. The approach has sparked much interest in analogue electronics and is linked to important advances in integrated circuit technology, such as CMOS VLSI which allows mixed analogue and digital circuits and high-speed GaAs processing.
Author: Chinmay K. Maiti
Publisher: CRC Press
ISBN: 9814745529
Category : Science
Languages : en
Pages : 438
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Book Description
This might be the first book that deals mostly with the 3D technology computer-aided design (TCAD) simulations of major state-of-the-art stress- and strain-engineered advanced semiconductor devices: MOSFETs, BJTs, HBTs, nonclassical MOS devices, finFETs, silicon-germanium hetero-FETs, solar cells, power devices, and memory devices. The book focuses on how to set up 3D TCAD simulation tools, from mask layout to process and device simulation, including design for manufacturing (DFM), and from device modeling to SPICE parameter extraction. The book also offers an innovative and new approach to teaching the fundamentals of semiconductor process and device design using advanced TCAD simulations of various semiconductor structures. The simulation examples chosen are from the most popular devices in use today and provide useful technology and device physics insights. To extend the role of TCAD in today’s advanced technology era, process compact modeling and DFM issues have been included for design–technology interface generation. Unique in approach, this book provides an integrated view of silicon technology and beyond—with emphasis on TCAD simulations. It is the first book to provide a web-based online laboratory for semiconductor device characterization and SPICE parameter extraction. It describes not only the manufacturing practice associated with the technologies used but also the underlying scientific basis for those technologies. Written from an engineering standpoint, this book provides the process design and simulation background needed to understand new and future technology development, process modeling, and design of nanoscale transistors. The book also advances the understanding and knowledge of modern IC design via TCAD, improves the quality in micro- and nanoelectronics R&D, and supports the training of semiconductor specialists. It is intended as a textbook or reference for graduate students in the field of semiconductor fabrication and as a reference for engineers involved in VLSI technology development who have to solve device and process problems. CAD specialists will also find this book useful since it discusses the organization of the simulation system, in addition to presenting many case studies where the user applies TCAD tools in different situations.
