Author: Mujibunnisa Nisa Khan
Publisher:
ISBN:
Category :
Languages : en
Pages : 382
Book Description
Electrooptic Waveguide Directional Coupler Modulator in Aluminum Gallium Arsenide-gallium Arsenide
Author: Mujibunnisa Nisa Khan
Publisher:
ISBN:
Category :
Languages : en
Pages : 382
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 382
Book Description
Digital Logic and Reconfigurable Interconnects Using Aluminum Gallium Arsenide Electro-optic Fredkin Gates
Author: James G. Grote
Publisher:
ISBN:
Category : Digital integrated circuits
Languages : en
Pages : 568
Book Description
Publisher:
ISBN:
Category : Digital integrated circuits
Languages : en
Pages : 568
Book Description
A Synthesized Electrooptic Directional-coupler Modulator at 1300-nanometer Wavelength with Low Switching Voltage
Author: Chanin Laliew
Publisher:
ISBN:
Category : Optical communications
Languages : en
Pages : 328
Book Description
A low-switching-voltage electrooptic directional-coupler modulator for use in analog optical communication systems at the wavelength of 1300 nanometers was investigated. Conventional optical directional couplers have a pair of their constitutive waveguides running in parallel, and thus the coupling between them is constant throughout the length of the structure, and this gives rise to an approximate sinc-squared amplitude transfer function. This transfer or response function is nonlinear, and therefore modulators based on the constant-coupling directional coupler may only have a small modulation depth of about 2%--5% for analog communication systems. In this work, the directional coupler was modified by varying the etch depth between the two constitutive waveguides while keeping the spacing between them constant along the length of the structure, so that the modulator's response function of the desired form was obtained and exhibited high linearity. Consequently, large dynamic range and low switching voltage operation may be realized with this directional-coupler modulator. Based on this concept, the device built in AlGaAs/GaAs semiconductor material was designed, fabricated and tested. The do experimental result shows that the directional-coupler modulator, which is 1.5 cm long, has a switching voltage of about 1.8 volts--one of the lowest values for electrooptic modulators built to date. With further investigation on the RF/microwave characteristics, the directional-coupler modulator based on this design might prove to be promising for use in the optical communication mainstream.
Publisher:
ISBN:
Category : Optical communications
Languages : en
Pages : 328
Book Description
A low-switching-voltage electrooptic directional-coupler modulator for use in analog optical communication systems at the wavelength of 1300 nanometers was investigated. Conventional optical directional couplers have a pair of their constitutive waveguides running in parallel, and thus the coupling between them is constant throughout the length of the structure, and this gives rise to an approximate sinc-squared amplitude transfer function. This transfer or response function is nonlinear, and therefore modulators based on the constant-coupling directional coupler may only have a small modulation depth of about 2%--5% for analog communication systems. In this work, the directional coupler was modified by varying the etch depth between the two constitutive waveguides while keeping the spacing between them constant along the length of the structure, so that the modulator's response function of the desired form was obtained and exhibited high linearity. Consequently, large dynamic range and low switching voltage operation may be realized with this directional-coupler modulator. Based on this concept, the device built in AlGaAs/GaAs semiconductor material was designed, fabricated and tested. The do experimental result shows that the directional-coupler modulator, which is 1.5 cm long, has a switching voltage of about 1.8 volts--one of the lowest values for electrooptic modulators built to date. With further investigation on the RF/microwave characteristics, the directional-coupler modulator based on this design might prove to be promising for use in the optical communication mainstream.
High Speed Gallium Arsenide/aluminum Gallium Arsenide Traveling Wave Electro-optic Modulators
Author: Ralph Spickermann
Publisher:
ISBN:
Category :
Languages : en
Pages : 315
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 315
Book Description
Modelling and Fabrication of Gallium-arsenide/gallium-aluminium-arsenide Optical Rib Waveguide Directional Couplers
Author: Michael Aquilina
Publisher:
ISBN:
Category : Aluminum
Languages : en
Pages : 342
Book Description
Publisher:
ISBN:
Category : Aluminum
Languages : en
Pages : 342
Book Description
Optically-activated Integrated Optic Directional-coupler Modulator Using GaAs Ridge Waveguide
Author: Zhongyuan Ren
Publisher:
ISBN:
Category :
Languages : en
Pages : 56
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 56
Book Description
A Grating Coupling Study of Gallium Arsenide-aluminum Gallium Arsenide Multiquantum Well Waveguides
Author: Gregory Joseph Sonek
Publisher:
ISBN:
Category : Dielectric wave guides
Languages : en
Pages : 356
Book Description
Publisher:
ISBN:
Category : Dielectric wave guides
Languages : en
Pages : 356
Book Description
Gallium Arsenide-based Traveling Wave Electro-optic Modulators
Author: Yansong Cui
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
Book Description
This thesis addresses research on the design and modeling of GaAs traveling wave electro-optic modulators with a highly doped layer. These modulators are in the form of a waveguide integrated with Planar Microstrip electrodes (PMS), and of a Mach-Zehnder interferometer integrated with capacitively loaded Coplanar Strips (CPS) electrodes. In both, the use of a thin highly doped layer ensures a good overlap between the applied electric field and optical mode. The design space of both PMS and loaded CPS electrodes are fully characterized. Waveguides of low propagation loss are designed. Wide bandwidth traveling wave modulators require low optical and microwave insertion loss, impedance matching, velocity matching and low half wave voltage. The simulation results predict that modulators with PMS electrodes have a limited frequency response while the modulators with CPS loaded electrodes have an electrical 3 dB bandwidth up to 70 GHz for 1cm device and Vpi of 9.4 V·cm.
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
Book Description
This thesis addresses research on the design and modeling of GaAs traveling wave electro-optic modulators with a highly doped layer. These modulators are in the form of a waveguide integrated with Planar Microstrip electrodes (PMS), and of a Mach-Zehnder interferometer integrated with capacitively loaded Coplanar Strips (CPS) electrodes. In both, the use of a thin highly doped layer ensures a good overlap between the applied electric field and optical mode. The design space of both PMS and loaded CPS electrodes are fully characterized. Waveguides of low propagation loss are designed. Wide bandwidth traveling wave modulators require low optical and microwave insertion loss, impedance matching, velocity matching and low half wave voltage. The simulation results predict that modulators with PMS electrodes have a limited frequency response while the modulators with CPS loaded electrodes have an electrical 3 dB bandwidth up to 70 GHz for 1cm device and Vpi of 9.4 V·cm.
Reduced Voltage Substrate-removed Gallium Arsenide/Aluminum Gallium Arsenide Electro-optic Modulators
Author: Steven R. Sakamoto
Publisher:
ISBN:
Category :
Languages : en
Pages : 554
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 554
Book Description
Optoelectronic Materials, Devices, Packaging, and Interconnects
Author: Ted E. Batchman
Publisher:
ISBN:
Category : Optoelectronic devices
Languages : en
Pages : 400
Book Description
Publisher:
ISBN:
Category : Optoelectronic devices
Languages : en
Pages : 400
Book Description