Electronic Transport Properties of Thin Films of Amorphous Silicon PDF Download
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Author: H. S. Fortuna
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
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Author: H. S. Fortuna
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
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Author: Abdessalam Yacoub Ghaith
Publisher:
ISBN:
Category : Physical sciences
Languages : en
Pages :
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Author: Fuchao Wang
Publisher:
ISBN:
Category :
Languages : de
Pages : 190
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Author: Thomas James Belich
Publisher:
ISBN:
Category :
Languages : en
Pages : 326
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Author: Ning Du
Publisher:
ISBN:
Category : Amorphous semiconductors
Languages : en
Pages : 220
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Author: Zolili U. Ndlela
Publisher:
ISBN:
Category :
Languages : en
Pages : 314
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Author: Castro Galnares Wright Paz Castro Galnares
Publisher:
ISBN:
Category :
Languages : en
Pages : 88
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Solar cells have become an increasingly viable alternative to traditional, pollution causing power generation methods. Although crystalline silicon (c-Si) modules make up most of the market, thin films such as hydrogenated amorphous silicon (a-Si:H) are attractive for use in solar cell modules because of the capacity to fabricate cells with much less material. However, several challenges exist in making this material a more practical alternative to c-Si; despite having superior optical absorption properties, a-Si:H suffers in electronic transport, having a hole mobility 3-7 orders of magnitude less than that of c-Si. In the MOSFET transistor industry, carrier speeds and thus mobilities of c-Si were improved through the application of stress in the material. This work hypothesizes that a similar application of stress on a-Si:H thin films can enhance this material's hole mobility. A comprehensive study of the parameter space for a plasma enhanced chemical vapor deposition technique used to produce a-Si:H is performed. This enables the control of stress within the deposited film, from compressive to tensile; the mechanical limits of the material resulting in buckling and delamination failure are observed. Further characterization of a-Si:H thin films with different levels of engineered stress was performed; an analysis of the films' surface using AFM measurements to calculate a fractal dimension for each did not result in a significant descriptor of the surfaces' domain distribution. This work includes a detailed analysis of the theory of time-of-flight for measuring carrier mobility in thin film materials, and the system requirements needed to perform them.
Author: C. H. S. Dupuy
Publisher: Springer Science & Business Media
ISBN: 146840847X
Category : Science
Languages : en
Pages : 508
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For several years now the intense development in the field of microelectronics, the interest in coating materials, and activity in integrated optics have produced many advances in the field of thin solid filmg~ The research activity has become so intensive and so broad that it is necessary to divide the field into metallic and non metallic thin films. A summer school in the area of non metallic thin films appeared to be a very fruitful concept and, hence, in October, 1973, A.S.l.M.S. made a proposal to N.A.T.O to hold this second summer school in Corsica in September 1974. The basic idea behind this summer school was essentially to stress and synthesize physical properties and structure of non metallic thin films. The main reason for this was the feeling that many laboratories are very specialized and that few engage in both physical and structural analysis of these films. The program included a large section on' physical studies: electrical (transport, interface effects, switching), mechanical and optical. There was also a large section o~characterization, crystal structure, chemical composition (stoichiometry is always a difficult problem), bonding and electronic structure.
Author: Tim Searle
Publisher: Institution of Electrical Engineers
ISBN:
Category : Science
Languages : en
Pages : 440
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Coverage: preparation and material quality; structural and vibrational properties; electronic structure; electronic transport recombination of excess carriers; Schottky junctions; multilayers; optical constants; mechanical and thermal properties; TFTs; solar cells; photodetectors; large area displays; LEDs; xerographic applications.
Author: Jeffrey Scott Hutson
Publisher:
ISBN:
Category :
Languages : en
Pages : 190
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