Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 412

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Author: Marion Jeanne Leonella Sourribes
Publisher:
ISBN:
Category :
Languages : en
Pages : 0

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Author: Mengqi Fu
Publisher: Springer
ISBN: 9811334447
Category : Science
Languages : en
Pages : 113

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This book explores the impacts of important material parameters on the electrical properties of indium arsenide (InAs) nanowires, which offer a promising channel material for low-power electronic devices due to their small bandgap and high electron mobility. Smaller diameter nanowires are needed in order to scale down electronic devices and improve their performance. However, to date the properties of thin InAs nanowires and their sensitivity to various factors were not known. The book presents the first study of ultrathin InAs nanowires with diameters below 10 nm are studied, for the first time, establishing the channel in field-effect transistors (FETs) and the correlation between nanowire diameter and device performance. Moreover, it develops a novel method for directly correlating the atomic-level structure with the properties of individual nanowires and their device performance. Using this method, the electronic properties of InAs nanowires and the performance of the FETs they are used in are found to change with the crystal phases (wurtzite, zinc-blend or a mix phase), the axis direction and the growth method. These findings deepen our understanding of InAs nanowires and provide a potential way to tailor device performance by controlling the relevant parameters of the nanowires and devices.

Author: David Gutstein
Publisher:
ISBN:
Category :
Languages : en
Pages : 0

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Experiments and analysis reported in this thesis advance the understanding of quantum transport in nanowire transistors. Indium Arsenide nanowires grown by molecular beam epitaxy were incorporated into numerous back-gated field effect transistors and electronic measurements confirm electron transport is occurring in a regime where ballistic transmission and quantum confinement effects are significant. Quantum interference phenomena are investigated through electrostatic manipulation of interface charge configurations and interference quenching is demonstrated in a nanowire device. Elimination of interference distortions reveal perfect quantization of the conductance and provide direct insight into the one-dimensional quantum-electronic bandstructure which displays strong divergence from cylindrical hard-wall confinement. Numerical simulations investigating morphological variations demonstrate a strong influence on electronic sub-band structure, prompting characterization of the cross-sectional morphology via focused ion beam micro-sampling and transmission electron microscopy. Adoption of hard-wall confinement potentials consistent with the characterized morphology indicates significant electrostatic influence of interface charges on the sub-band structure.

Author: J Arbiol
Publisher: Elsevier
ISBN: 1782422633
Category : Technology & Engineering
Languages : en
Pages : 573

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Semiconductor nanowires promise to provide the building blocks for a new generation of nanoscale electronic and optoelectronic devices. Semiconductor Nanowires: Materials, Synthesis, Characterization and Applications covers advanced materials for nanowires, the growth and synthesis of semiconductor nanowires—including methods such as solution growth, MOVPE, MBE, and self-organization. Characterizing the properties of semiconductor nanowires is covered in chapters describing studies using TEM, SPM, and Raman scattering. Applications of semiconductor nanowires are discussed in chapters focusing on solar cells, battery electrodes, sensors, optoelectronics and biology. - Explores a selection of advanced materials for semiconductor nanowires - Outlines key techniques for the property assessment and characterization of semiconductor nanowires - Covers a broad range of applications across a number of fields

Author: Yu Huang
Publisher: CRC Press
ISBN: 981430347X
Category : Science
Languages : en
Pages : 472

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Nanoscale materials are showing great promise in various electronic, optoelectronic, and energy applications. Silicon (Si) has especially captured great attention as the leading material for microelectronic and nanoscale device applications. Recently, various silicides have garnered special attention for their pivotal role in Si device engineering

Author: Jianye Li
Publisher: Bentham Science Publishers
ISBN: 1608050521
Category : Technology & Engineering
Languages : en
Pages : 186

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"Semiconductor nanowires exhibit novel electronic and optical properties due to their unique one-dimensional structure and quantum confinement effects. In particular, III-V semiconductor nanowires have been of great scientific and technological interest fo"

Author: Axel Lorke
Publisher: Springer Science & Business Media
ISBN: 3642285465
Category : Science
Languages : en
Pages : 425

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Book Description
Gasphase synthesis of nanoparticles and nanostructured materials offers high chemical purity and crystalline quality as well as scalability up to industrial quantities. It is therefore highly attractive for both basic and applied science. This book gives a broad and coherent overview of the complete production and value chain from nanoparticle formation to integration into products and devices. Written by experts in the field – with backgrounds in electrical engineering, experimental and theoretical physics, materials science, and chemical engineering – the book offers a deep insight into the fabrication, characterization and application of nanoparticles from the gasphase. The first part of the book, “Formation”, covers chemical and growth kinetics, in-situ diagnostics, numerical simulation, process development and material deposition. In the second section, the reader is introduced to the structure and dynamics that lead to functional nanoscale systems and materials. The third section, “Properties and Applications”, provides a detailed discussion of the optical, electronic, magnetic and chemical characteristics of nanostructures and demonstrates how these can be used in tailored materials and devices.

Author: Fumitaro Ishikawa
Publisher: CRC Press
ISBN: 9814745774
Category : Science
Languages : en
Pages : 549

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Book Description
One dimensional electronic materials are expected to be key components owing to their potential applications in nanoscale electronics, optics, energy storage, and biology. Besides, compound semiconductors have been greatly developed as epitaxial growth crystal materials. Molecular beam and metalorganic vapor phase epitaxy approaches are representative techniques achieving 0D–2D quantum well, wire, and dot semiconductor III-V heterostructures with precise structural accuracy with atomic resolution. Based on the background of those epitaxial techniques, high-quality, single-crystalline III-V heterostructures have been achieved. III-V Nanowires have been proposed for the next generation of nanoscale optical and electrical devices such as nanowire light emitting diodes, lasers, photovoltaics, and transistors. Key issues for the realization of those devices involve the superior mobility and optical properties of III-V materials (i.e., nitride-, phosphide-, and arsenide-related heterostructure systems). Further, the developed epitaxial growth technique enables electronic carrier control through the formation of quantum structures and precise doping, which can be introduced into the nanowire system. The growth can extend the functions of the material systems through the introduction of elements with large miscibility gap, or, alternatively, by the formation of hybrid heterostructures between semiconductors and another material systems. This book reviews recent progresses of such novel III-V semiconductor nanowires, covering a wide range of aspects from the epitaxial growth to the device applications. Prospects of such advanced 1D structures for nanoscience and nanotechnology are also discussed.

Author: Alexandra Caroline Ford
Publisher:
ISBN:
Category :
Languages : en
Pages : 162

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High electron mobility III-V compound semiconductors such as indium arsenide (InAs) are promising candidates for future active channel materials of electron devices to further enhance device performance. In particular, compound semiconductors heterogeneously integrated on Si substrates have been studied, combining the high mobility of III-V semiconductors and the well-established, low cost processing of Si technology. However, one of the primary challenges of III-V device fabrication is controllable, post-growth dopant profiling. Here InAs nanowires and ultrathin layers (nanoribbons) on SiO2/Si are investigated as the channel material for high performance field-effect transistors (FETs) and post-growth, patterned doping techniques are demonstrated. First, the synthesis of crystalline InAs nanowires with high yield and tunable diameters by using Ni nanoparticles as the catalyst material on SiO2/Si substrates is demonstrated. The back-gated InAs nanowire FETs have electron field-effect mobilities of 4̃,000 cm2/Vs and ION/IOFF 1̃04. The uniformity of the InAs nanowires is demonstrated by large-scale assembly of parallel arrays of nanowires (4̃00 nanowires) on SiO2/Si substrates by a contact printing process. This enables high performance, "printable" transistors with 5-10 mA ON currents. Second, an epitaxial transfer method for the integration of ultrathin layers of single-crystalline InAs on SiO2/Si substrates is demonstrated. As a parallel to silicon-on-insulator (SOI) technology, the abbreviation "XOI" is used to represent this compound semiconductor-on-insulator platform. A high quality InAs/dielectric interface is obtained by the use of a thermally grown interfacial InAsOx layer (1̃ nm thick). Top-gated FETs exhibit a peak transconductance of 1̃.6 mS/0µm at VDS=0.5V with ION/IOFF>104and subthreshold swings of 107-150 mV/decade for a channel length of 0̃.5 0µm. Next, temperature-dependent I-V and C-V studies of single InAs nanowire FETs are utilized to investigate the intrinsic electron transport properties as a function of nanowire radius. From C-V characterization, the densities of thermally-activated fixed charges and trap states on the surface of as-grown (unpassivated) nanowires are investigated to allow the accurate measurement of the gate oxide capacitance. This allows the direct assessment of the electron field-effect mobility. The field-effect mobility is found to monotonically decrease as the radius is reduced to sub-10 nm, with the low temperature transport data highlighting the impact of surface roughness scattering on the mobility degradation for smaller radius nanowires. Next, the electrical properties of the InAs XOI transistors are studied, showing the critical role of quantum confinement in the transport properties of ultrathin XOI layers. Following the investigation of the electrical properties of undoped InAs nanostructures, post-growth, surface doping processes for InAs nanostructures are addressed. Nanoscale, sulfur doping of InAs planar substrates with high dopant areal dose and uniformity by using a self-limiting monolayer doping approach is demonstrated as a means to create ultrashallow junctions. From transmission electron microscopy (TEM) and secondary ion mass spectrometry (SIMS), a dopant profile abruptness of 3̃.5 nm/decade is observed without significant lattice damage. The n+/p+ junctions fabricated using this doping method exhibit negative differential resistance (NDR) behavior, demonstrating the utility of this approach for device fabrication with high electrically active sulfur concentrations of 8̃x1018 cm-3. Next, a gas phase doping approach for InAs nanowires and ultrathin XOI layers using zinc is demonstrated as an effective means for enabling post-growth dopant profiling of nanostructures. The versatility of the approach is demonstrated by the fabrication of gated diodes and p-MOSFETs. Electrically active zinc concentrations of 1̃x1019 cm-3 are achieved which is necessary for compensating the high electron concentration at the surface of InAs to enable heavily p-doped structures. This work could have important applications for the fabrication of planar and non-planar devices based on InAs and other III-V nanostructures which are not compatible with conventional ion implantation processes that often cause severe lattice damage and local stoichiometry imbalance. Lastly, an ultrathin body InAs XOI tunneling field-effect transistor (TFET) on Si substrate is demonstrated. The post-growth, zinc surface doping approach is used for the formation of a p+ source contact which minimizes lattice damage to the ultrathin body InAs XOI compared to ion implantation. The transistor exhibits gated NDR behavior under forward bias, confirming the tunneling operation of the device. In this device architecture, the ON current is dominated by vertical band-to-band tunneling and is thereby less sensitive to the junction abruptness. This work presents a device and materials platform for studying III-V tunnel transistors.