Electronic Properties of Multilayers and Low-Dimensional Semiconductor Structures PDF Download
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Author: J.M. Chamberlain
Publisher: Springer Science & Business Media
ISBN: 146847412X
Category : Science
Languages : en
Pages : 477
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Book Description
This Advanced Study Institute on the Electronic Properties of Multilayers and Low Dimensional Semiconductor Structures focussed on several of the most active areas in modern semiconductor physics. These included resonant tunnelling and superlattice phenomena and the topics of ballistic transport, quantised conductance and anomalous magnetoresistance effects in laterally gated two-dimensional electron systems. Although the main emphasis was on fundamental physics, a series of supporting lectures described the underlying technology (Molecular Beam Epitaxy, Metallo-Organic Chemical Vapour Deposition, Electron Beam Lithography and other advanced processing technologies). Actual and potential applications of low dimensional structures in optoelectronic and high frequency devices were also discussed. The ASI took the form of a series of lectures of about fifty minutes' duration which were given by senior researchers from a wide range of countries. Most of the lectures are recorded in these Proceedings. The younger members of the Institute made the predominant contribution to the discussion sessions following each lecture and, in addition, provided most of the fifty-five papers that were presented in two lively poster sessions. The ASl emphasised the impressive way in which this research field has developed through the fruitful interaction of theory, experiment and semiconductor device technology. Many of the talks demonstrated both the effectiveness and limitations of semiclassical concepts in describing the quantum phenomena exhibited by electrons in low dimensional structures.
Author: J.M. Chamberlain
Publisher: Springer Science & Business Media
ISBN: 146847412X
Category : Science
Languages : en
Pages : 477
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Book Description
This Advanced Study Institute on the Electronic Properties of Multilayers and Low Dimensional Semiconductor Structures focussed on several of the most active areas in modern semiconductor physics. These included resonant tunnelling and superlattice phenomena and the topics of ballistic transport, quantised conductance and anomalous magnetoresistance effects in laterally gated two-dimensional electron systems. Although the main emphasis was on fundamental physics, a series of supporting lectures described the underlying technology (Molecular Beam Epitaxy, Metallo-Organic Chemical Vapour Deposition, Electron Beam Lithography and other advanced processing technologies). Actual and potential applications of low dimensional structures in optoelectronic and high frequency devices were also discussed. The ASI took the form of a series of lectures of about fifty minutes' duration which were given by senior researchers from a wide range of countries. Most of the lectures are recorded in these Proceedings. The younger members of the Institute made the predominant contribution to the discussion sessions following each lecture and, in addition, provided most of the fifty-five papers that were presented in two lively poster sessions. The ASl emphasised the impressive way in which this research field has developed through the fruitful interaction of theory, experiment and semiconductor device technology. Many of the talks demonstrated both the effectiveness and limitations of semiclassical concepts in describing the quantum phenomena exhibited by electrons in low dimensional structures.
Author: Paul N. Butcher
Publisher: Springer Science & Business Media
ISBN: 1489924159
Category : Science
Languages : en
Pages : 597
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Book Description
Presenting the latest advances in artificial structures, this volume discusses in-depth the structure and electron transport mechanisms of quantum wells, superlattices, quantum wires, and quantum dots. It will serve as an invaluable reference and review for researchers and graduate students in solid-state physics, materials science, and electrical and electronic engineering.
Author:
Publisher: Academic Press
ISBN: 0080865089
Category : Technology & Engineering
Languages : en
Pages : 465
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Book Description
The explosion of the science of mesoscopic structures is having a great impact on physics and electrical engineering because of the possible applications of these structures in microelectronic and optoelectronic devices of the future. This volume of Solid State Physics consists of two comprehensive and authoritative articles that discuss most of the physical problems that have so far been identified as being of importance in semiconductor nanostructures. Much of the volume is tutorial in characture--while at the same time time presenting current and vital theoretical and experimental results and a copious reference list--so it will be essential reading to all those taking a part in the research and development of this emerging technology.
Author: Electrochemical society. Meeting
Publisher: The Electrochemical Society
ISBN: 1566778654
Category : Science
Languages : en
Pages : 950
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Book Description
This issue of ECS Transactions contains the peer-reviewed full length papers of the International Symposium on Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics held May 1-6, 2011 in Montreal as a part of the 219th Meeting of The Electrochemical Society. The papers address a very diverse range of topics. In addition to the deposition and characterization of the dielectrics, more specific topics addressed by the papers include applications, device characterization and reliability, interface states, interface traps, defects, transistor and gate oxide studies, and modeling.
Author: Supriyo Datta
Publisher: Cambridge University Press
ISBN: 9780521599436
Category : Science
Languages : en
Pages : 398
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Book Description
A thorough account of the theory of electronic transport in semiconductor nanostructures.
Author: John P. Reece
Publisher: Nova Publishers
ISBN: 9781600212130
Category : Technology & Engineering
Languages : en
Pages : 260
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Book Description
Nanotechnology is a 'catch-all' description of activities at the level of atoms and molecules that have applications in the real world. A manometer is a billionth of a meter, about 1/80,000 of the diameter of a human hair, or 10 times the diameter of a hydrogen atom. Nanotechnology is now used in precision engineering, new materials development as well as in electronics; electromechanical systems as well as mainstream biomedical applications in areas such as gene therapy, drug delivery and novel drug discovery techniques. This book presents the latest research in this frontier field.
Author: H.W.M Salemink
Publisher: Springer Science & Business Media
ISBN: 940112034X
Category : Technology & Engineering
Languages : en
Pages : 252
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Book Description
The Advanced Research Workshop on the Physical Properties of Semiconductor Interfaces at the Sub-Nanometer Scale was held from 31 August to 2 September, 1992, in Riva del Garda. Italy. The aim of the workshop was to bring together experts in different aspects of the study of semiconductor interfaces and in small-scale devices where the interface properties can be very significant It was our aim that this would help focus research of the growth and characterization of semiconductor interfaces at the atomic scale on the issues that will have the greatest impact on devices of the future. Some 30 participants from industrial and academic research institutes and from 11 countries contributed to the workshop with papers on their recent wode. . 'There was ample time for discussion after each talk. as well as a summary discussion at the end of the meeting. The major themes of the meeting are described below. The meeting included several talks relating to the different growth techniques used in heteroepitaxial growth of semiconductors. Horikoshi discussed the atomistic processes involved in MBE, MEE and MOCVD, presenting results of experimental RHEED and photoluminescence measurements; Foxon compared the merits of MBE, MOCVD, and eBE growth; Molder described RHEED studies of Si/Ge growth by GSMBE, and Pashley discussed the role of surface reconstructions in MBE growth as seen from STM studies on GaAs. On the theoretical side, Vvedensky described several different methods to model growth: molecular dynamics, Monte Carlo techniques, and analytic modeling.
Author: Fritz Herlach
Publisher: World Scientific
ISBN: 9814490547
Category : Science
Languages : en
Pages : 281
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Book Description
This three-volume book provides a comprehensive review of experiments in very strong magnetic fields that can only be generated with very special magnets. The first volume is entirely devoted to the technology of laboratory magnets: permanent, superconducting, high-power water-cooled and hybrid; pulsed magnets, both nondestructive and destructive (megagauss fields). Volumes 2 and 3 contain reviews of the different areas of research where strong magnetic fields are an essential research tool. These volumes deal primarily with solid-state physics; other research areas covered are biological systems, chemistry, atomic and molecular physics, nuclear resonance, plasma physics and astrophysics (including QED).
Author: Fritz Herlach
Publisher: World Scientific
ISBN: 9812774874
Category : Science
Languages : en
Pages : 281
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Book Description
This three-volume book provides a comprehensive review of experiments in very strong magnetic fields that can only be generated with very special magnets. The first volume is entirely devoted to the technology of laboratory magnets: permanent, superconducting, high-power water-cooled and hybrid; pulsed magnets, both nondestructive and destructive (megagauss fields). Volumes 2 and 3 contain reviews of the different areas of research where strong magnetic fields are an essential research tool. These volumes deal primarily with solid-state physics; other research areas covered are biological systems, chemistry, atomic and molecular physics, nuclear resonance, plasma physics and astrophysics (including QED).
Author: R. C. Alkire
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 308
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Book Description
