Author: Aaron B. Blanning (MAJ, USA)
Publisher:
ISBN:
Category :
Languages : en
Pages : 196

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Author: Shubham Tayal
Publisher: CRC Press
ISBN: 1000640183
Category : Computers
Languages : en
Pages : 307

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Book Description
This book gives insight into the emerging semiconductor devices from their applications in electronic circuits. It discusses the challenges in the field of engineering and applications of advanced low-power devices. Emerging Low-Power Semiconductor Devices: Applications for Future Technology Nodes offers essential exposure to low-power devices, and applications in wireless, biosensing, and circuit domains. This book provides a detailed discussion on all aspects, including the current and future scenarios related to the low-power device. The book also presents basic knowledge about field-effect transistor (FET) devices and introduces emerging and novel FET devices. The chapters include a review of the usage of FET devices in various domains like biosensing, wireless, and cryogenics applications. The chapters also explore device-circuit co-design issues in the digital and analog domains. The content is presented in an easy-to-follow manner that makes it ideal for individuals new to the subject. This book is intended for scientists, researchers, and postgraduate students looking for an understanding of device physics, circuits, and systems.

Author: Kandhar Kurhade
Publisher:
ISBN:
Category :
Languages : en
Pages :

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In this thesis we investigated the electrical characteristics of GaN schottky diodes fabricated on a commercial LED wafer using Inductively Coupled Plasma Reactive Ion etching (ICP-RIE) techniques. We also researched the characteristics of commercially available SiC schottky diodes. Two main electrical characterization techniques were used in the investigation of these diodes, Current - Voltage Characterization and Capacitance - Voltage Characterization. Using I-V characteristics the ideality and the Barrier height of the Schottky diode was determined and the C-V characteristics were used to calculate the doping concentration of the device. These measurements were done at room temperature as well as different temperatures ranging from 100K to 300K for GaN diodes and 133K to 433K for SiC diodes to observe the dependence of Barrier height and the Ideality factor on the temperature. It was concluded that for GaN the ideality factor decreases with the increase in temperature while the barrier height increases with increase in temperature. The values of barrier height for GaN at 120K is 0.44eV and at 300K it is 0.81eV and the ideality factor at 120K is 0.96 and at 300K it is 0.6. The carrier concentration of the SiC remains constant through the three regions while the carrier concentration of GaN device increases as the reverse bias increases. GaN diode was also measured at two different frequencies to observe if there is any change in the C-V profile and the profile was similar for the two frequencies.Further this thesis comprises of a small novel device which is in the process of fabrication. It is a non-mechanical beam steerer which makes use of Liquid crystals to deviate a beam from its normal position. This thesis only includes the architecture used in the manufacturing of the device and the fabrication of a liquid crystal cell.

Author: S. Jang
Publisher: The Electrochemical Society
ISBN: 1607688700
Category : Science
Languages : en
Pages : 53

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Book Description
This issue of ECS Transactions includes papers based on presentations from the symposium "Wide Bandgap Semiconductor Materials and Devices 20," originally held at the 235th ECS Meeting in Dallas, Texas, May 26-30, 2019.

Author:
Publisher:
ISBN:
Category : Infrared detectors
Languages : en
Pages : 428

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Author: Michael Thomas
Publisher:
ISBN:
Category :
Languages : en
Pages : 0

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High-performance Schottky contact metallizations on gallium nitride (GaN) are needed for high-power and/or high-temperature diodes. Device fabrication methods can have a significant effect on the performance of devices owing to defects introduced by processing, which can create states in the bandgap. Deep level optical spectroscopy (DLOS) is an important technique for characterizing the relative densities and energy levels of these defects. In order to use it, light must be able to penetrate into the active area of the device. This requirement necessitates changing an existing fabrication procedure while ensuring that the device performance is unchanged. Designing, implementing, and testing a DLOS-compatible GaN Schottky diode fabrication method was the goal of this thesis. This investigation demonstrates that DLOS-compatible rhenium Schottky diodes to GaN can be made with comparable performance to existing devices. Ideal rectifying characteristics were achieved. From current-voltage characterization of diodes immediately after fabrication, an average Schottky barrier height of 0.786 eV with a standard deviation of 0.050 eV was measured. Those same diodes had an average ideality factor of 1.02 with a standard deviation of

Author: Kevin Peter O'Donnell
Publisher: Springer Science & Business Media
ISBN: 9048128773
Category : Science
Languages : en
Pages : 366

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Book Description
This book summarises recent progress in the science and technology of rare-earth doped nitrides, providing a snapshot of the field at a critical point in its development. It is the first book on rare-earth doped III-Nitrides and semiconductors.

Author:
Publisher:
ISBN:
Category : Chemistry
Languages : en
Pages : 2002

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Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 19

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The recent demonstration of visible thin-film electroluminescence (TFEL) devices based on rare earth doped GaN has spurred great interest in this class of materials for possible applications in full color displays. Prime candidates for redgreen- blue (RGB) emission are the rare earth ions Eu3+ (red), Er3+ (green), and Tm3+ (blue). A full-color TFEL phosphor system based on RE doped GaN has been demonstrated with high brightness (500-1000 cd/m2) under direct current operation of GaN: Er films on Si and sapphire substrates. The recent results on RE doped GaN have shown that these materials are promising for electroluminescent devices operating at room temperature. However, the initial results also indicated that more fundamental studies on the incorporation and excitation mechanisms of RE ions in III-nitrides are necessary to optimize their device performance. In this final report, spectroscopic results focusing on the infrared and visible emission from Er3+ in GaN are presented. The results include a comparison of the optical properties of in -situ Er doped GaN prepared by metalorganic MBE and solid-source MBE. In addition, detailed spectroscopic studies on Er doped GaN prepared by SSMBE as a function of excitation wavelengths, temperature, and pump power are discussed. Finally, initial result on the optical properties of Eu doped GaN are summarized.

Author:
Publisher: Newnes
ISBN: 0080932282
Category : Science
Languages : en
Pages : 3572

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Book Description
Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts