Author: Jonathan J. Strand
Publisher:
ISBN:
Category :
Languages : en
Pages : 294
Book Description
Electron Spin Dynamics and Hyperfine Interactions in Ferromagnet-semiconductor Heterostructures
Author: Jonathan J. Strand
Publisher:
ISBN:
Category :
Languages : en
Pages : 294
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 294
Book Description
Manipulating Quantum Coherence in Solid State Systems
Author: Michael E. Flatté
Publisher: Springer Science & Business Media
ISBN: 1402061374
Category : Science
Languages : en
Pages : 245
Book Description
This book features the proceedings of the NATO Advanced Study Institute "Manipulating Quantum Coherence in Solid State Systems", held in Cluj-Napoca, Romania, August 2005, which presented a fundamental introduction to solid-state approaches to achieving quantum computation. This proceedings volume describes the properties of quantum coherence in semiconductor spin-based systems and the behavior of quantum coherence in superconducting systems.
Publisher: Springer Science & Business Media
ISBN: 1402061374
Category : Science
Languages : en
Pages : 245
Book Description
This book features the proceedings of the NATO Advanced Study Institute "Manipulating Quantum Coherence in Solid State Systems", held in Cluj-Napoca, Romania, August 2005, which presented a fundamental introduction to solid-state approaches to achieving quantum computation. This proceedings volume describes the properties of quantum coherence in semiconductor spin-based systems and the behavior of quantum coherence in superconducting systems.
Nanomagnetism
Author:
Publisher: Elsevier
ISBN: 0080457177
Category : Technology & Engineering
Languages : en
Pages : 349
Book Description
Nanoscience is of central importance in the physical and biological sciences and is now pervasive in technology. However nanomagnetism has a special role to play as magnetic properties depend uniquely on both dimensionality and lengthscales. Nanomagnetism is already central to data storage, sensor and device technologies but is increasingly being used in the life sciences and medicine. This volume aims to introduce scientists, computer scientists, engineers and technologists from diverse fields to this fascinating and technologically important new branch of nanoscience. The volume should appeal to both the interested general reader but also to the researcher wishing to obtain an overview of this fast moving field. The contributions come from acknowledged leaders in the field who each give authoritative accounts of key fundamental aspects of nanomagnetism to which they have themselves made a major contribution. After a brief introduction by the editors, Wu first surveys the fundamental properties of magnetic nanostructures. The interlayer exchange interactions within magnetic multilayer structures is next discussed by Stiles. Camley then discusses the static, dynamic and thermal properties of magnetic multilayers and nanostructures, followed by an account of the phenomenon of exchange anisotropy by Berkowitz and Kodama. This latter phenomenon is widely in current read head devices for example. The transport properties of nanostructures also are spectacular, and again underpin computer technology, as we see from the discussion of giant magnetoresistance (GMR) and tunnelling magnetoresistance (TMR) presented by Fert and his colleagues. Beyond GMR and TMR we look to the field of spintronics where new electronic devices are envisioned and for which quantumcomputing may depend as discussed in the chapter by Flatte and Jonker.The volume concludes with discussion of the recently discovered phenomenon of current induced switching of magnetization by Edwards and Mathon.* Subject is in the forefront of nanoscience* All Section authors are leading figures in this key field* Presentations are accessible to non specialists, with focus on underlying fundamentals
Publisher: Elsevier
ISBN: 0080457177
Category : Technology & Engineering
Languages : en
Pages : 349
Book Description
Nanoscience is of central importance in the physical and biological sciences and is now pervasive in technology. However nanomagnetism has a special role to play as magnetic properties depend uniquely on both dimensionality and lengthscales. Nanomagnetism is already central to data storage, sensor and device technologies but is increasingly being used in the life sciences and medicine. This volume aims to introduce scientists, computer scientists, engineers and technologists from diverse fields to this fascinating and technologically important new branch of nanoscience. The volume should appeal to both the interested general reader but also to the researcher wishing to obtain an overview of this fast moving field. The contributions come from acknowledged leaders in the field who each give authoritative accounts of key fundamental aspects of nanomagnetism to which they have themselves made a major contribution. After a brief introduction by the editors, Wu first surveys the fundamental properties of magnetic nanostructures. The interlayer exchange interactions within magnetic multilayer structures is next discussed by Stiles. Camley then discusses the static, dynamic and thermal properties of magnetic multilayers and nanostructures, followed by an account of the phenomenon of exchange anisotropy by Berkowitz and Kodama. This latter phenomenon is widely in current read head devices for example. The transport properties of nanostructures also are spectacular, and again underpin computer technology, as we see from the discussion of giant magnetoresistance (GMR) and tunnelling magnetoresistance (TMR) presented by Fert and his colleagues. Beyond GMR and TMR we look to the field of spintronics where new electronic devices are envisioned and for which quantumcomputing may depend as discussed in the chapter by Flatte and Jonker.The volume concludes with discussion of the recently discovered phenomenon of current induced switching of magnetization by Edwards and Mathon.* Subject is in the forefront of nanoscience* All Section authors are leading figures in this key field* Presentations are accessible to non specialists, with focus on underlying fundamentals
Dissertation Abstracts International
Author:
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 794
Book Description
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 794
Book Description
Solid State Physics
Author: Henry Ehrenreich
Publisher: Academic Press
ISBN: 0080865224
Category : Science
Languages : en
Pages : 193
Book Description
Solid state physics is the branch of physics that is primarily devoted to the study of matter in its solid phase, especially at the atomic level. This prestigious serial presents timely and state-of-the-art reviews pertaining to all aspects of solid state physics.
Publisher: Academic Press
ISBN: 0080865224
Category : Science
Languages : en
Pages : 193
Book Description
Solid state physics is the branch of physics that is primarily devoted to the study of matter in its solid phase, especially at the atomic level. This prestigious serial presents timely and state-of-the-art reviews pertaining to all aspects of solid state physics.
Handbook of Spin Transport and Magnetism
Author: Evgeny Y. Tsymbal
Publisher: CRC Press
ISBN: 1439803781
Category : Science
Languages : en
Pages : 797
Book Description
In the past several decades, the research on spin transport and magnetism has led to remarkable scientific and technological breakthroughs, including Albert Fert and Peter Grunberg's Nobel Prize-winning discovery of giant magnetoresistance (GMR) in magnetic metallic multilayers. Handbook of Spin Transport and Magnetism provides a comprehensive, bal
Publisher: CRC Press
ISBN: 1439803781
Category : Science
Languages : en
Pages : 797
Book Description
In the past several decades, the research on spin transport and magnetism has led to remarkable scientific and technological breakthroughs, including Albert Fert and Peter Grunberg's Nobel Prize-winning discovery of giant magnetoresistance (GMR) in magnetic metallic multilayers. Handbook of Spin Transport and Magnetism provides a comprehensive, bal
The Creation and Transport of Spin-polarized Carriers in Semiconductor Heterostructures
Author: James Patrick McGuire
Publisher:
ISBN:
Category :
Languages : en
Pages : 220
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 220
Book Description
High-k Gate Dielectric Materials
Author: Niladri Pratap Maity
Publisher: CRC Press
ISBN: 1000517764
Category : Science
Languages : en
Pages : 264
Book Description
This volume explores and addresses the challenges of high-k gate dielectric materials, one of the major concerns in the evolving semiconductor industry and the International Technology Roadmap for Semiconductors (ITRS). The application of high-k gate dielectric materials is a promising strategy that allows further miniaturization of microelectronic components. This book presents a broad review of SiO2 materials, including a brief historical note of Moore’s law, followed by reliability issues of the SiO2 based MOS transistor. It goes on to discuss the transition of gate dielectrics with an EOT ~ 1 nm and a selection of high-k materials. A review of the various deposition techniques of different high-k films is also discussed. High-k dielectrics theories (quantum tunneling effects and interface engineering theory) and applications of different novel MOSFET structures, like tunneling FET, are also covered in this book. The volume also looks at the important issues in the future of CMOS technology and presents an analysis of interface charge densities with the high-k material tantalum pentoxide. The issue of CMOS VLSI technology with the high-k gate dielectric materials is covered as is the advanced MOSFET structure, with its working structure and modeling. This timely volume will prove to be a valuable resource on both the fundamentals and the successful integration of high-k dielectric materials in future IC technology.
Publisher: CRC Press
ISBN: 1000517764
Category : Science
Languages : en
Pages : 264
Book Description
This volume explores and addresses the challenges of high-k gate dielectric materials, one of the major concerns in the evolving semiconductor industry and the International Technology Roadmap for Semiconductors (ITRS). The application of high-k gate dielectric materials is a promising strategy that allows further miniaturization of microelectronic components. This book presents a broad review of SiO2 materials, including a brief historical note of Moore’s law, followed by reliability issues of the SiO2 based MOS transistor. It goes on to discuss the transition of gate dielectrics with an EOT ~ 1 nm and a selection of high-k materials. A review of the various deposition techniques of different high-k films is also discussed. High-k dielectrics theories (quantum tunneling effects and interface engineering theory) and applications of different novel MOSFET structures, like tunneling FET, are also covered in this book. The volume also looks at the important issues in the future of CMOS technology and presents an analysis of interface charge densities with the high-k material tantalum pentoxide. The issue of CMOS VLSI technology with the high-k gate dielectric materials is covered as is the advanced MOSFET structure, with its working structure and modeling. This timely volume will prove to be a valuable resource on both the fundamentals and the successful integration of high-k dielectric materials in future IC technology.
Chemical Abstracts
Author:
Publisher:
ISBN:
Category : Chemistry
Languages : en
Pages : 2626
Book Description
Publisher:
ISBN:
Category : Chemistry
Languages : en
Pages : 2626
Book Description
Organic Spintronics
Author: Zeev Valy Vardeny
Publisher: CRC Press
ISBN: 1439806578
Category : Science
Languages : en
Pages : 354
Book Description
Major development efforts in organic materials research has grown for an array of applications. Organic spintronics, in particular, has flourished in the area of organic magneto-transport. Reflecting the main avenues of advancement in this arena, this volume explores spin injection and manipulation in organic spin valves, the magnetic field effect in organic light-emitting diodes (OLEDs), the spin transport effect in relation to spin manipulation, organic magnets as spin injection electrodes in organic spintronics devices, the coherent control of spins in organic devices using the technique of electronically detected magnetic resonance, and the possibility of using organic spin valves as sensors.
Publisher: CRC Press
ISBN: 1439806578
Category : Science
Languages : en
Pages : 354
Book Description
Major development efforts in organic materials research has grown for an array of applications. Organic spintronics, in particular, has flourished in the area of organic magneto-transport. Reflecting the main avenues of advancement in this arena, this volume explores spin injection and manipulation in organic spin valves, the magnetic field effect in organic light-emitting diodes (OLEDs), the spin transport effect in relation to spin manipulation, organic magnets as spin injection electrodes in organic spintronics devices, the coherent control of spins in organic devices using the technique of electronically detected magnetic resonance, and the possibility of using organic spin valves as sensors.