Electron Spin and Charge in Semiconductor Quantum Dots PDF Download
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Author: Jeroen Martijn Elzerman
Publisher: Delft University Press
ISBN: 9789040725333
Category : Technology & Engineering
Languages : en
Pages : 147
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Book Description
Introduction, Few-electron quantum dot circuit with integrated charge read-out, Excited-state spectroscopy on a nearly closed quantum dot via charge detection, Real-time detection of single electron tunneling using a quantum point contact, Single-shot read-out of an individual electron spin in a quantum dot, Semiconductor few-electron quantum dots as spin qubits, the Kondo effect in the unitary limit, Kondo effect in an integer-spin quantum dot, Electron cotunneling in a semiconductor dot, Summary.
Author: Jeroen Martijn Elzerman
Publisher: Delft University Press
ISBN: 9789040725333
Category : Technology & Engineering
Languages : en
Pages : 147
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Book Description
Introduction, Few-electron quantum dot circuit with integrated charge read-out, Excited-state spectroscopy on a nearly closed quantum dot via charge detection, Real-time detection of single electron tunneling using a quantum point contact, Single-shot read-out of an individual electron spin in a quantum dot, Semiconductor few-electron quantum dots as spin qubits, the Kondo effect in the unitary limit, Kondo effect in an integer-spin quantum dot, Electron cotunneling in a semiconductor dot, Summary.
Author: Oliver Gywat
Publisher: John Wiley & Sons
ISBN: 3527408061
Category : Technology & Engineering
Languages : en
Pages : 220
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Book Description
Filling a gap in the literature, this up-to-date introduction to the field provides an overview of current experimental techniques, basic theoretical concepts, and sample fabrication methods. Following an introduction, this monograph deals with optically active quantum dots and their integration into electro-optical devices, before looking at the theory of quantum confined states and quantum dots interacting with the radiation field. Final chapters cover spin-spin interaction in quantum dots as well as spin and charge states, showing how to use single spins for break-through quantum computation. A conclusion and outlook round off the volume. The result is a primer providing the essential basic knowledge necessary for young researchers entering the field, as well as semiconductor and theoretical physicists, PhD students in physics and material sciences, electrical engineers and materials scientists.
Author: D.D. Awschalom
Publisher: Springer Science & Business Media
ISBN: 366205003X
Category : Technology & Engineering
Languages : en
Pages : 321
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Book Description
The past few decades of research and development in solid-state semicon ductor physics and electronics have witnessed a rapid growth in the drive to exploit quantum mechanics in the design and function of semiconductor devices. This has been fueled for instance by the remarkable advances in our ability to fabricate nanostructures such as quantum wells, quantum wires and quantum dots. Despite this contemporary focus on semiconductor "quantum devices," a principal quantum mechanical aspect of the electron - its spin has it accounts for an added quan largely been ignored (except in as much as tum mechanical degeneracy). In recent years, however, a new paradigm of electronics based on the spin degree of freedom of the electron has begun to emerge. This field of semiconductor "spintronics" (spin transport electron ics or spin-based electronics) places electron spin rather than charge at the very center of interest. The underlying basis for this new electronics is the intimate connection between the charge and spin degrees of freedom of the electron via the Pauli principle. A crucial implication of this relationship is that spin effects can often be accessed through the orbital properties of the electron in the solid state. Examples for this are optical measurements of the spin state based on the Faraday effect and spin-dependent transport measure ments such as giant magneto-resistance (GMR). In this manner, information can be encoded in not only the electron's charge but also in its spin state, i. e.
Author: Ladislaus BÂ nyai
Publisher: World Scientific
ISBN: 9789810213909
Category : Technology & Engineering
Languages : en
Pages : 264
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Book Description
Semiconductor Quantum Dots presents an overview of the background and recent developments in the rapidly growing field of ultrasmall semiconductor microcrystallites, in which the carrier confinement is sufficiently strong to allow only quantized states of the electrons and holes. The main emphasis of this book is the theoretical analysis of the confinement induced modifications of the optical and electronic properties of quantum dots in comparison with extended materials. The book develops the theoretical background material for the analysis of carrier quantum-confinement effects, introduces the different confinement regimes for relative or center-of-mass motion quantization of the electron-hole-pairs, and gives an overview of the best approximation schemes for each regime. A detailed discussion of the carrier states in quantum dots is presented and surface polarization instabilities are analyzed, leading to the self-trapping of carriers near the surface of the dots. The influence of spin-orbit coupling on the quantum-confined carrier states is discussed. The linear and nonlinear optical properties of small and large quantum dots are studied in detail and the influence of the quantum-dot size distribution in many realistic samples is outlined. Phonons in quantum dots as well as the influence of external electric or magnetic fields are also discussed. Last but not least the recent developments dealing with regular systems of quantum dots are also reviewed. All things included, this is an important piece of work on semiconductor quantum dots not to be dismissed by serious researchers and physicists.
Author: Changxue Deng
Publisher:
ISBN:
Category :
Languages : en
Pages : 145
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Book Description
In this dissertation, we present detailed studies on the nuclear spin dynamics and relaxation, electron spin decoherence, and non-equilibrium electronic transport in Kondo regime for semiconductor quantum dots. We calculate the coefficients of nuclear spin diffusion with two different methods. It is shown that hyperfine interaction decreases the diffusion coefficients dramatically. We discuss the performance of the coherent spin transfer with the nuclear quantum memory using quantum dot, and calculate the operation fidelity due to nuclear spin dipolar coupling. We also study the possible nuclear spin polarization and relaxation mechanism in a spin-blocked double-dot, and qualitatively explain some of the recent experimental results. We study the electron spin decoherence time (T 2) resulting from hyperfine coupling with the equation-of-motion approach. We show that the transverse electron spin undergoes a complete decay in the long time limit by including higher-order processes. Finally we develop a real-time density matrix method and apply it to study the non-equilibrium electron transport through quantum dots in the context of Kondo effect.
Author: Peter Michler
Publisher: Springer Science & Business Media
ISBN: 3540874461
Category : Technology & Engineering
Languages : en
Pages : 390
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Book Description
This book reviews recent advances in the field of semiconductor quantum dots via contributions from prominent researchers in the scientific community. Special focus is given to optical, quantum optical, and spin properties of single quantum dots.
Author: Lucjan Jacak
Publisher: Springer Science & Business Media
ISBN: 3642720021
Category : Technology & Engineering
Languages : en
Pages : 176
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Book Description
We present an overview of the theoretical background and experimental re sults in the rapidly developing field of semiconductor quantum dots - systems 8 6 of dimensions as small as 10- -10- m (quasi-zero-dimensional) that contain a small and controllable number (1-1000) of electrons. The electronic structure of quantum dots, including the energy quan tization of the single-particle states (due to spatial confinement) and the evolution of these (Fock-Darwin) states in an increasing external magnetic field, is described. The properties of many-electron systems confined in a dot are also studied. This includes the separation of the center-of-mass mo tion for the parabolic confining potential (and hence the insensitivity of the transitions under far infrared radiation to the Coulomb interactions and the number of particles - the generalized Kohn theorem) and the effects due to Coulomb interactions (formation of the incompressible magic states at high magnetic fields and their relation to composite jermions), and finally the spin-orbit interactions. In addition, the excitonic properties of quantum dots are discussed, including the energy levels and the spectral function of a single exciton, the relaxation of confined carriers, the metastable states and their effect on the photoluminescence spectrum, the interaction of an exciton with carriers, and exciton condensation. The theoretical part of this work, which is based largely on original re sults obtained by the authors, has been supplemented with descriptions of various methods of creating quantum-dot structures.
Author: William K. Liu
Publisher:
ISBN:
Category : Charge transfer
Languages : en
Pages : 282
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Book Description
Author: M. M. Glazov
Publisher: Oxford University Press
ISBN: 0192534211
Category : Science
Languages : en
Pages : 320
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Book Description
In recent years, the physics community has experienced a revival of interest in spin effects in solid state systems. On one hand, the solid state systems, particularly, semiconductors and semiconductor nanosystems, allow us to perform benchtop studies of quantum and relativistic phenomena. On the other hand, this interest is supported by the prospects of realizing spin-based electronics, where the electron or nuclear spins may play a role of quantum or classical information carriers. This book looks in detail at the physics of interacting systems of electron and nuclear spins in semiconductors, with particular emphasis on low-dimensional structures. These two spin systems naturally appear in practically all widespread semiconductor compounds. The hyperfine interaction of the charge carriers and nuclear spins is particularly prominent in nanosystems due to the localization of the charge carriers, and gives rise to spin exchange between these two systems and a whole range of beautiful and complex physics of manybody and nonlinear systems. As a result, understanding of the intertwined spin systems of electrons and nuclei is crucial for in-depth studying and controlling the spin phenomena in semiconductors. The book addresses a number of the most prominent effects taking place in semiconductor nanosystems including hyperfine interaction, nuclear magnetic resonance, dynamical nuclear polarization, spin-Faraday and spin-Kerr effects, processes of electron spin decoherence and relaxation, effects of electron spin precession mode-locking and frequency focussing, as well as fluctuations of electron and nuclear spins.
Author: Chang-Yu Hsieh
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
