Electron Ballistic Effects in III-V Semiconductors PDF Download
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Author: G. Y. Robinson
Publisher:
ISBN:
Category :
Languages : en
Pages : 9
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Book Description
The purpose of this three-year research program was to study electron transport in III-V semiconductors, starting with an investigation of ballistic transport in GaAs. Also for experimental studies of electron transport in the III-V semiconductors, test devices were to be constructed from submicron layers grown by molecular beam epitaxy. For ballistic electron transport in submicron GaAs devices, the influence of the boundary conditions were explained, a theory for low-field diode conductance was developed, the high-field diode impedance was calculated, and experimental data was compared to theoretical predictions. This work led to an investigation, both experimental and theoretical, of electron transport in the two-dimensional electron gas (TEG) of a modulation-doped heterostructure. The theoretical studies produced a model of electron transport in GaAs/AlGaAs modulation-doped structures and prediction of the electron mobility in TEG layers. The experimental work led to a new method of III-V heterojunction characterization and to an explanation of the temperature dependent behavior of a modulation-doped transistor.
Author: G. Y. Robinson
Publisher:
ISBN:
Category :
Languages : en
Pages : 9
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Book Description
The purpose of this three-year research program was to study electron transport in III-V semiconductors, starting with an investigation of ballistic transport in GaAs. Also for experimental studies of electron transport in the III-V semiconductors, test devices were to be constructed from submicron layers grown by molecular beam epitaxy. For ballistic electron transport in submicron GaAs devices, the influence of the boundary conditions were explained, a theory for low-field diode conductance was developed, the high-field diode impedance was calculated, and experimental data was compared to theoretical predictions. This work led to an investigation, both experimental and theoretical, of electron transport in the two-dimensional electron gas (TEG) of a modulation-doped heterostructure. The theoretical studies produced a model of electron transport in GaAs/AlGaAs modulation-doped structures and prediction of the electron mobility in TEG layers. The experimental work led to a new method of III-V heterojunction characterization and to an explanation of the temperature dependent behavior of a modulation-doped transistor.
Author: Serge Oktyabrsky
Publisher: Springer Science & Business Media
ISBN: 1441915478
Category : Technology & Engineering
Languages : en
Pages : 451
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Book Description
Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.
Author:
Publisher:
ISBN:
Category : Military research
Languages : en
Pages : 588
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Book Description
Author: Heinz Kalt
Publisher: Springer Science & Business Media
ISBN: 3642582842
Category : Science
Languages : en
Pages : 209
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Book Description
This monograph is concerned with the III-V bulk and low-dimensional semiconductors, with the emphasis on the implications of multi-valley bandstructures for the physical mechanisms essential for opto-electronic devices. The optical response of such semiconductor materials is determined by many-body effects such as screening, gap narrowing, Fermi-edge singularity, electron-hole plasma and liquid formation. Consequently, the discussion of these features reflects such interdependencies with the dynamics of excitons and carriers resulting from intervalley coupling.
Author: Jyoti Prasad Banerjee
Publisher: CRC Press
ISBN: 1482223066
Category : Science
Languages : en
Pages : 413
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Book Description
This book is a comprehensive text on the physics of semiconductors and nanostructures for a large spectrum of students at the final undergraduate level studying physics, material science and electronics engineering. It offers introductory and advanced courses on solid state and semiconductor physics on one hand and the physics of low dimensional semiconductor structures on the other in a single text book. Key Features Presents basic concepts of quantum theory, solid state physics, semiconductors, and quantum nanostructures such as quantum well, quantum wire, quantum dot and superlattice In depth description of semiconductor heterojunctions, lattice strain and modulation doping technique Covers transport in nanostructures under an electric and magnetic field with the topics: quantized conductance, Coulomb blockade, and integer and fractional quantum Hall effect Presents the optical processes in nanostructures under a magnetic field Includes illustrative problems with hints for solutions in each chapter Physics of Semiconductors and Nanostructures will be helpful to students initiating PhD work in the field of semiconductor nanostructures and devices. It follows a unique tutorial approach meeting the requirements of students who find learning the concepts difficult and want to study from a physical perspective.
Author: United States. Army Research Office
Publisher:
ISBN:
Category : Military research
Languages : en
Pages : 458
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Book Description
Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 1460
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Book Description
Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.
Author: D. Nirmal
Publisher: CRC Press
ISBN: 0429862520
Category : Science
Languages : en
Pages : 446
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Book Description
This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots
Author: Massimo V. Fischetti
Publisher: Springer
ISBN: 3319011014
Category : Technology & Engineering
Languages : en
Pages : 481
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Book Description
This textbook is aimed at second-year graduate students in Physics, Electrical Engineering, or Materials Science. It presents a rigorous introduction to electronic transport in solids, especially at the nanometer scale.Understanding electronic transport in solids requires some basic knowledge of Hamiltonian Classical Mechanics, Quantum Mechanics, Condensed Matter Theory, and Statistical Mechanics. Hence, this book discusses those sub-topics which are required to deal with electronic transport in a single, self-contained course. This will be useful for students who intend to work in academia or the nano/ micro-electronics industry.Further topics covered include: the theory of energy bands in crystals, of second quantization and elementary excitations in solids, of the dielectric properties of semiconductors with an emphasis on dielectric screening and coupled interfacial modes, of electron scattering with phonons, plasmons, electrons and photons, of the derivation of transport equations in semiconductors and semiconductor nanostructures somewhat at the quantum level, but mainly at the semi-classical level. The text presents examples relevant to current research, thus not only about Si, but also about III-V compound semiconductors, nanowires, graphene and graphene nanoribbons. In particular, the text gives major emphasis to plane-wave methods applied to the electronic structure of solids, both DFT and empirical pseudopotentials, always paying attention to their effects on electronic transport and its numerical treatment. The core of the text is electronic transport, with ample discussions of the transport equations derived both in the quantum picture (the Liouville-von Neumann equation) and semi-classically (the Boltzmann transport equation, BTE). An advanced chapter, Chapter 18, is strictly related to the ‘tricky’ transition from the time-reversible Liouville-von Neumann equation to the time-irreversible Green’s functions, to the density-matrix formalism and, classically, to the Boltzmann transport equation. Finally, several methods for solving the BTE are also reviewed, including the method of moments, iterative methods, direct matrix inversion, Cellular Automata and Monte Carlo. Four appendices complete the text.
Author: Abdul-Azeez Sulaiman Al-Omar
Publisher:
ISBN:
Category : Electron transport
Languages : en
Pages : 754
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Book Description
