Electrical Transport in Metal-Oxide-Semiconductor Capacitors PDF Download
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Languages : en
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The current transport mechanisms in metal-oxide-semiconductor (MOS) capacitors have been studied. The devices used in this study have characterized by current-voltage analyses. Physical parameter extractions and computer generated fit methods have been applied to experimental data. Two devices have been investigated: A relatively thick oxide (125 nm) and an ultra-thin oxide (3 nm) MOS structures. The voltage and temperature dependence of these devices have been explained by using present current transport models.
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Languages : en
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Book Description
The current transport mechanisms in metal-oxide-semiconductor (MOS) capacitors have been studied. The devices used in this study have characterized by current-voltage analyses. Physical parameter extractions and computer generated fit methods have been applied to experimental data. Two devices have been investigated: A relatively thick oxide (125 nm) and an ultra-thin oxide (3 nm) MOS structures. The voltage and temperature dependence of these devices have been explained by using present current transport models.
Author: C. T. Sah
Publisher:
ISBN:
Category : Capacitors
Languages : en
Pages : 139
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Author:
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Category : Aeronautics
Languages : en
Pages : 1064
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Author: Md. Tashfin Zayed Hossain
Publisher:
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Category :
Languages : en
Pages :
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Book Description
Author: Bernard Pichaud
Publisher: Trans Tech Publications Ltd
ISBN: 303813029X
Category : Technology & Engineering
Languages : en
Pages : 830
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Book Description
Volume is indexed by Thomson Reuters CPCI-S (WoS). This proceedings volume contains 126 contributions from the 11th international meeting on Gettering and Defect Engineering in Semiconductor Technology GADEST 2005 held at La Badine at the Giens peninsula south of France.
Author: Allen Pang-I Ho
Publisher:
ISBN:
Category : Metal oxide semiconductors
Languages : en
Pages : 172
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Book Description
Author: Simon M. Sze
Publisher: John Wiley & Sons
ISBN: 1119618002
Category : Technology & Engineering
Languages : en
Pages : 944
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Book Description
The new edition of the most detailed and comprehensive single-volume reference on major semiconductor devices The Fourth Edition of Physics of Semiconductor Devices remains the standard reference work on the fundamental physics and operational characteristics of all major bipolar, unipolar, special microwave, and optoelectronic devices. This fully updated and expanded edition includes approximately 1,000 references to original research papers and review articles, more than 650 high-quality technical illustrations, and over two dozen tables of material parameters. Divided into five parts, the text first provides a summary of semiconductor properties, covering energy band, carrier concentration, and transport properties. The second part surveys the basic building blocks of semiconductor devices, including p-n junctions, metal-semiconductor contacts, and metal-insulator-semiconductor (MIS) capacitors. Part III examines bipolar transistors, MOSFETs (MOS field-effect transistors), and other field-effect transistors such as JFETs (junction field-effect-transistors) and MESFETs (metal-semiconductor field-effect transistors). Part IV focuses on negative-resistance and power devices. The book concludes with coverage of photonic devices and sensors, including light-emitting diodes (LEDs), solar cells, and various photodetectors and semiconductor sensors. This classic volume, the standard textbook and reference in the field of semiconductor devices: Provides the practical foundation necessary for understanding the devices currently in use and evaluating the performance and limitations of future devices Offers completely updated and revised information that reflects advances in device concepts, performance, and application Features discussions of topics of contemporary interest, such as applications of photonic devices that convert optical energy to electric energy Includes numerous problem sets, real-world examples, tables, figures, and illustrations; several useful appendices; and a detailed solutions manual for Instructor's only Explores new work on leading-edge technologies such as MODFETs, resonant-tunneling diodes, quantum-cascade lasers, single-electron transistors, real-space-transfer devices, and MOS-controlled thyristors Physics of Semiconductor Devices, Fourth Edition is an indispensable resource for design engineers, research scientists, industrial and electronics engineering managers, and graduate students in the field.
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Category : Aeronautics
Languages : en
Pages : 1372
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Book Description
Author: Ming He
Publisher: Springer Science & Business Media
ISBN: 1461418127
Category : Technology & Engineering
Languages : en
Pages : 155
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Book Description
Metal-dielectric interfaces are ubiquitous in modern electronics. As advanced gigascale electronic devices continue to shrink, the stability of these interfaces is becoming an increasingly important issue that has a profound impact on the operational reliability of these devices. In this book, the authors present the basic science underlying the thermal and electrical stability of metal-dielectric interfaces and its relationship to the operation of advanced interconnect systems in gigascale electronics. Interface phenomena, including chemical reactions between metals and dielectrics, metallic-atom diffusion, and ion drift, are discussed based on fundamental physical and chemical principles. Schematic diagrams are provided throughout the book to illustrate interface phenomena and the principles that govern them. Metal-Dielectric Interfaces in Gigascale Electronics provides a unifying approach to the diverse and sometimes contradictory test results that are reported in the literature on metal-dielectric interfaces. The goal is to provide readers with a clear account of the relationship between interface science and its applications in interconnect structures. The material presented here will also be of interest to those engaged in field-effect transistor and memristor device research, as well as university researchers and industrial scientists working in the areas of electronic materials processing, semiconductor manufacturing, memory chips, and IC design.
Author: Stephen J. Gaul
Publisher: John Wiley & Sons
ISBN: 1118701879
Category : Technology & Engineering
Languages : en
Pages : 392
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Book Description
A practical guide to the effects of radiation on semiconductor components of electronic systems, and techniques for the designing, laying out, and testing of hardened integrated circuits This book teaches the fundamentals of radiation environments and their effects on electronic components, as well as how to design, lay out, and test cost-effective hardened semiconductor chips not only for today’s space systems but for commercial terrestrial applications as well. It provides a historical perspective, the fundamental science of radiation, and the basics of semiconductors, as well as radiation-induced failure mechanisms in semiconductor chips. Integrated Circuits Design for Radiation Environments starts by introducing readers to semiconductors and radiation environments (including space, atmospheric, and terrestrial environments) followed by circuit design and layout. The book introduces radiation effects phenomena including single-event effects, total ionizing dose damage and displacement damage) and shows how technological solutions can address both phenomena. Describes the fundamentals of radiation environments and their effects on electronic components Teaches readers how to design, lay out and test cost-effective hardened semiconductor chips for space systems and commercial terrestrial applications Covers natural and man-made radiation environments, space systems and commercial terrestrial applications Provides up-to-date coverage of state-of-the-art of radiation hardening technology in one concise volume Includes questions and answers for the reader to test their knowledge Integrated Circuits Design for Radiation Environments will appeal to researchers and product developers in the semiconductor, space, and defense industries, as well as electronic engineers in the medical field. The book is also helpful for system, layout, process, device, reliability, applications, ESD, latchup and circuit design semiconductor engineers, along with anyone involved in micro-electronics used in harsh environments.
