Electrical and Optical Properties of Semi-insulating and Ion-implanted Gallium-arsenide and Indium-phosphide PDF Download
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Author: Jin Koo Rhee
Publisher:
ISBN:
Category :
Languages : en
Pages : 138
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Author: Jin Koo Rhee
Publisher:
ISBN:
Category :
Languages : en
Pages : 138
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Author: T. P. Pearsall
Publisher: Inst of Engineering & Technology
ISBN: 085296949X
Category : Technology & Engineering
Languages : en
Pages : 279
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Book Description
Annotation This collection of 49 papers identifies the significant advances and distills the current knowledge from the literature which has been published on indium phosphate (InP) in the last ten years. The major areas of discussion are the importance on InP properties in devices; mechanical, thermal, piezoelectric and electro-optic properties; electronic transport properties; band structure; optical properties; defects, deep levels and their detection; and processing technologies. Topics include InP-based alloys as optical amplifiers and lasers, electron and hole mobilities in InP, conduction band and valance band offsets at various InP/semiconductor interfaces, defect energy levels in irradiated or implanted InP, and etching of InP. Some of the material is reprinted from published in 1991. Distributed by INSPEC. Annotation c. Book News, Inc., Portland, OR (booknews.com)
Author:
Publisher: INSPEC
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 370
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Author: REES
Publisher: Birkhäuser
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 384
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Book Description
The study of deep levels in semiconductors has seen considerable growth in recent years. Many new techniques have become available for investigating both the electronic properties of deep levels and the chemical nature of the defects from which they arise. This increasing interest has been stimulated by the importance of the subject to device technology, in particular those microwave and opto-electronic devices made from GaAs, InP and their alloys. While previous conferences have covered specialist areas of deep level technology, the meeting described here was arranged to draw together workers from these separate fields of study. The following papers reflect the breadth of interests represented at the conference. For the sake of uniformity we have chosen the English alternative where an American expression has been used. We have also sought to improve grammar, sometimes without the approval of the author in the interests of rapid publication. The Editor wishes to thank the referees for their ready advice at all stages, Paul Jay who helped with many of the editorial duties and Muriel Howes and Lorraine Jones for rapid and accurate typing.
Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 836
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Author: Anikara Rangappan
Publisher:
ISBN:
Category :
Languages : en
Pages : 122
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Author:
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 992
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Author: Richard Dana Pashley
Publisher:
ISBN:
Category : Doped semiconductors
Languages : en
Pages : 123
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Book Description
Part I: With the advent of ion implantation, it has become possible to introduce many new dopant species into silicon. The electrical behavior of implanted species displaying deep energy levels was investigated. Part II: Ion implantation was investigated as a doping process for the fabrication of submicron n-type layers in GaAs.
Author: R D. Metcalfe
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Author: David K. Ferry
Publisher: Sams Technical Publishing
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 504
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