Electrical and Optical Characterization of Group III-nitride Alloys for Solar Energy Conversion PDF Download
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Author: Rebecca Elizabeth Jones
Publisher:
ISBN:
Category :
Languages : en
Pages : 314
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Book Description
Author: Rebecca Elizabeth Jones
Publisher:
ISBN:
Category :
Languages : en
Pages : 314
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Book Description
Author: Tao Peng
Publisher:
ISBN:
Category :
Languages : en
Pages : 86
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Book Description
Author: James H. Edgar
Publisher: Institution of Electrical Engineers
ISBN:
Category : Science
Languages : en
Pages : 328
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Book Description
The group III nitrides are playing an increasingly important role in the development of commercially viable microelectronic and optoelectronic devices. This volume provides reviews and evaluations of the group, in addition to guidance on the current reference literature.
Author: Ayse Erol
Publisher: Springer Science & Business Media
ISBN: 3540745297
Category : Technology & Engineering
Languages : en
Pages : 607
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Book Description
This book reviews the current status of research and development in dilute III-V nitrides. It covers major developments in this new class of materials within 24 chapters from prominent research groups. The book integrates materials science and applications in optics and electronics in a unique way. It is valuable both as a reference work for researchers and as a study text for graduate students.
Author: Ayse Erol
Publisher: Springer
ISBN: 9783540842996
Category : Technology & Engineering
Languages : en
Pages : 592
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Book Description
This book reviews the current status of research and development in dilute III-V nitrides. It covers major developments in this new class of materials within 24 chapters from prominent research groups. The book integrates materials science and applications in optics and electronics in a unique way. It is valuable both as a reference work for researchers and as a study text for graduate students.
Author: Mahmoud Omar Manasreh
Publisher:
ISBN:
Category : Nitrides
Languages : en
Pages :
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Book Description
Author: Hai Lu
Publisher:
ISBN:
Category :
Languages : en
Pages : 300
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Book Description
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
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Book Description
Incorporation of nitrogen in conventional III-V compound semiconductors to form III-N-V alloys leads to a splitting of the conduction band into two nonparabolic sub-bands. The splitting can be described in terms of an anticrossing interaction between a narrow band of localized nitrogen states and the extended conduction-band states of the semiconductor matrix. The downward shift of the lowersub-band edge is responsible for the N-induced reduction of the fundamental band-gap energy. The modification of the conduction-band structure profoundly affects the optical and electrical properties of the III-N-V alloys.
Author: Feng Chi
Publisher: Frontiers Media SA
ISBN: 2889742326
Category : Science
Languages : en
Pages : 202
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Book Description
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 84
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Book Description
The project focused on novel techniques in growth and characterization which may enhance group III - nitride applications. On the growth side nitride deposition on diamond templates was characterized as the most promising novel growth techniques. The continuing progress can be supported applying the novel characterization technique described below. Local inhomogeneities are a common feature in group III - nitrides. With standard characterization methods such materials cannot be properly evaluated. Multiple group III - nitride epilayers were investigated utilizing VEELS in combination with high resolution TEM in order to characterize the materials in high spatial and energy resolution. It was found that possible side effects such as sample damage due to electron irradiation or falsified results due to retardation effects can be avoided if proper sample treatment is applied. It is assumed that the occurrence of local electronic transitions in close vicinity to interfaces is due to the presence of local point or surface defects. For the first time it may become possible to investigate the impact of such defects on the performance of devices. For the InGaN alloy system nano-cluster formation which changes optical responses was investigated. It was found that the III-V compound InN exists as a composite InN:In material. InN commonly exhibits multiple optical responses including an interface and/or surface related effect, which triggered confusing scientific models in the past. The prospect of exploiting multiple energy transitions within ONE material offers completely new alternatives for novel device development.
