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Author: Zhong-lin Wang
Publisher: Springer Science & Business Media
ISBN: 1489915796
Category : Science
Languages : en
Pages : 461
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Book Description
Elastic and inelastic scattering in transmission electron microscopy (TEM) are important research subjects. For a long time, I have wished to systematically summarize various dynamic theories associated with quantitative electron micros copy and their applications in simulations of electron diffraction patterns and images. This wish now becomes reality. The aim of this book is to explore the physics in electron diffraction and imaging and related applications for materials characterizations. Particular emphasis is placed on diffraction and imaging of inelastically scattered electrons, which, I believe, have not been discussed exten sively in existing books. This book assumes that readers have some preknowledge of electron microscopy, electron diffraction, and quantum mechanics. I anticipate that this book will be a guide to approaching phenomena observed in electron microscopy from the prospects of diffraction physics. The SI units are employed throughout the book except for angstrom (A), which is used occasionally for convenience. To reduce the number of symbols used, the Fourier transform of a real-space function P'(r), for example, is denoted by the same symbol P'(u) in reciprocal space except that r is replaced by u. Upper and lower limits of an integral in the book are (-co, co) unless otherwise specified. The (-co, co) integral limits are usually omitted in a mathematical expression for simplification. I very much appreciate opportunity of working with Drs. J. M. Cowley and J. C. H. Spence (Arizona State University), J.
Author: Zhong-lin Wang
Publisher: Springer Science & Business Media
ISBN: 1489915796
Category : Science
Languages : en
Pages : 461
Get Book Here
Book Description
Elastic and inelastic scattering in transmission electron microscopy (TEM) are important research subjects. For a long time, I have wished to systematically summarize various dynamic theories associated with quantitative electron micros copy and their applications in simulations of electron diffraction patterns and images. This wish now becomes reality. The aim of this book is to explore the physics in electron diffraction and imaging and related applications for materials characterizations. Particular emphasis is placed on diffraction and imaging of inelastically scattered electrons, which, I believe, have not been discussed exten sively in existing books. This book assumes that readers have some preknowledge of electron microscopy, electron diffraction, and quantum mechanics. I anticipate that this book will be a guide to approaching phenomena observed in electron microscopy from the prospects of diffraction physics. The SI units are employed throughout the book except for angstrom (A), which is used occasionally for convenience. To reduce the number of symbols used, the Fourier transform of a real-space function P'(r), for example, is denoted by the same symbol P'(u) in reciprocal space except that r is replaced by u. Upper and lower limits of an integral in the book are (-co, co) unless otherwise specified. The (-co, co) integral limits are usually omitted in a mathematical expression for simplification. I very much appreciate opportunity of working with Drs. J. M. Cowley and J. C. H. Spence (Arizona State University), J.
Author: David B. Williams
Publisher: Springer Science & Business Media
ISBN: 1475725191
Category : Science
Languages : en
Pages : 708
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Book Description
Electron microscopy has revolutionized our understanding the extraordinary intellectual demands required of the mi of materials by completing the processing-structure-prop croscopist in order to do the job properly: crystallography, erties links down to atomistic levels. It now is even possible diffraction, image contrast, inelastic scattering events, and to tailor the microstructure (and meso structure ) of materials spectroscopy. Remember, these used to be fields in them to achieve specific sets of properties; the extraordinary abili selves. Today, one has to understand the fundamentals ties of modem transmission electron microscopy-TEM of all of these areas before one can hope to tackle signifi instruments to provide almost all of the structural, phase, cant problems in materials science. TEM is a technique of and crystallographic data allow us to accomplish this feat. characterizing materials down to the atomic limits. It must Therefore, it is obvious that any curriculum in modem mate be used with care and attention, in many cases involving rials education must include suitable courses in electron mi teams of experts from different venues. The fundamentals croscopy. It is also essential that suitable texts be available are, of course, based in physics, so aspiring materials sci for the preparation of the students and researchers who must entists would be well advised to have prior exposure to, for carry out electron microscopy properly and quantitatively.
Author: Adam J. Schwartz
Publisher: Springer Science & Business Media
ISBN: 1475732058
Category : Technology & Engineering
Languages : en
Pages : 352
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Book Description
Crystallographic texture or preferred orientation has long been known to strongly influence material properties. Historically, the means of obtaining such texture data has been though the use of x-ray or neutron diffraction for bulk texture measurements, or transmission electron microscopy or electron channeling for local crystallographic information. In recent years, we have seen the emergence of a new characterization technique for probing the microtexture of materials. This advance has come about primarily through the automated indexing of electron backscatter diffraction (EBSD) patterns. The first commercially available system was introduced in 1994, and since then of sales worldwide has been dramatic. This has accompanied widening the growth applicability in materials scienceproblems such as microtexture, phase identification, grain boundary character distribution, deformation microstructures, etc. and is evidence that this technique can, in some cases, replace more time-consuming transmission electron microscope (TEM) or x-ray diffraction investigations. The benefits lie in the fact that the spatial resolution on new field emission scanning electron microscopes (SEM) can approach 50 nm, but spatial extent can be as large a centimeter or greater with a computer controlled stage and montagingofthe images. Additional benefits include the relative ease and low costofattaching EBSD hardware to new or existing SEMs. Electron backscatter diffraction is also known as backscatter Kikuchi diffraction (BKD), or electron backscatter pattern technique (EBSP). Commercial names for the automation include Orientation Imaging Microscopy (OIMTM) and Automated Crystal Orientation Mapping (ACOM).
Author: Ludwig Reimer
Publisher: Springer
ISBN: 3540389679
Category : Science
Languages : en
Pages : 538
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Book Description
Scanning Electron Microscopy provides a description of the physics of electron-probe formation and of electron-specimen interactions. The different imaging and analytical modes using secondary and backscattered electrons, electron-beam-induced currents, X-ray and Auger electrons, electron channelling effects, and cathodoluminescence are discussed to evaluate specific contrasts and to obtain quantitative information.
Author: Brent Fultz
Publisher: Springer Science & Business Media
ISBN: 3642297609
Category : Science
Languages : en
Pages : 775
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Book Description
This book explains concepts of transmission electron microscopy (TEM) and x-ray diffractometry (XRD) that are important for the characterization of materials. The fourth edition adds important new techniques of TEM such as electron tomography, nanobeam diffraction, and geometric phase analysis. A new chapter on neutron scattering completes the trio of x-ray, electron and neutron diffraction. All chapters were updated and revised for clarity. The book explains the fundamentals of how waves and wavefunctions interact with atoms in solids, and the similarities and differences of using x-rays, electrons, or neutrons for diffraction measurements. Diffraction effects of crystalline order, defects, and disorder in materials are explained in detail. Both practical and theoretical issues are covered. The book can be used in an introductory-level or advanced-level course, since sections are identified by difficulty. Each chapter includes a set of problems to illustrate principles, and the extensive Appendix includes laboratory exercises.
Author: C. Barry Carter
Publisher: Springer
ISBN: 3319266519
Category : Technology & Engineering
Languages : en
Pages : 543
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Book Description
This text is a companion volume to Transmission Electron Microscopy: A Textbook for Materials Science by Williams and Carter. The aim is to extend the discussion of certain topics that are either rapidly changing at this time or that would benefit from more detailed discussion than space allowed in the primary text. World-renowned researchers have contributed chapters in their area of expertise, and the editors have carefully prepared these chapters to provide a uniform tone and treatment for this exciting material. The book features an unparalleled collection of color figures showcasing the quality and variety of chemical data that can be obtained from today’s instruments, as well as key pitfalls to avoid. As with the previous TEM text, each chapter contains two sets of questions, one for self assessment and a second more suitable for homework assignments. Throughout the book, the style follows that of Williams & Carter even when the subject matter becomes challenging—the aim is always to make the topic understandable by first-year graduate students and others who are working in the field of Materials Science Topics covered include sources, in-situ experiments, electron diffraction, Digital Micrograph, waves and holography, focal-series reconstruction and direct methods, STEM and tomography, energy-filtered TEM (EFTEM) imaging, and spectrum imaging. The range and depth of material makes this companion volume essential reading for the budding microscopist and a key reference for practicing researchers using these and related techniques.
Author: Marc De Graef
Publisher: Cambridge University Press
ISBN: 9780521629959
Category : Science
Languages : en
Pages : 718
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Book Description
A graduate level textbook covering the fundamentals of conventional transmission electron microscopy, first published in 2003.
Author: Peter W. Hawkes
Publisher: Academic Press
ISBN: 0323916473
Category : Technology & Engineering
Languages : en
Pages : 665
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Book Description
Principles of Electron Optics: Second Edition, Advanced Wave Optics provides a self-contained, modern account of electron optical phenomena with the Dirac or Schrödinger equation as a starting point. Knowledge of this branch of the subject is essential to understanding electron propagation in electron microscopes, electron holography and coherence. Sections in this new release include, Electron Interactions in Thin Specimens, Digital Image Processing, Acquisition, Sampling and Coding, Enhancement, Linear Restoration, Nonlinear Restoration – the Phase Problem, Three-dimensional Reconstruction, Image Analysis, Instrument Control, Vortex Beams, The Quantum Electron Microscope, and much more. - Includes authoritative coverage of many recent developments in wave electron optics - Describes the interaction of electrons with solids and the information that can be obtained from electron-beam techniques - Includes new content on multislice optics, 3D reconstruction, Wigner optics, vortex beams and the quantum electron microscope
Author: Ludwig Reimer
Publisher: SPIE Press
ISBN: 9780819412065
Category : Science
Languages : en
Pages : 162
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Book Description
While most textbooks about scanning electron microscopy (SEM) cover the high-voltage range from 5-50 keV, this volume considers the special problems in low-voltage SEM and summarizes the differences between LVSEM and conventional SEM. Chapters cover the influence of lens aberrations and design on electron-probe formation; the effect of elastic and inelastic scattering processes on electron diffusion and electron range; charging and radiation damage effects; the dependence of SE yield and the backscattering coefficient on electron energy, surface tilt, and material as well as the angular and energy distributions; and types of image contrast and the differences between LVSEM and conventional SEM modes due to the influence of electron-specimen interactions.
Author: Frances M. Ross
Publisher: Cambridge University Press
ISBN: 1107116570
Category : Science
Languages : en
Pages : 529
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Book Description
2.6.2 Electrodes for Electrochemistry
