Device Grade SiGe Heterostructures Grown by Plasma Assisted Techniques PDF Download
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Author: Matthias Kummer
Publisher:
ISBN: 9783832200244
Category : Germanium
Languages : en
Pages : 111
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Book Description
Author: Matthias Kummer
Publisher:
ISBN: 9783832200244
Category : Germanium
Languages : en
Pages : 111
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Book Description
Author: Mohamed Henini
Publisher: Elsevier
ISBN: 0128121378
Category : Science
Languages : en
Pages : 790
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Book Description
Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and 'how to' on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. - Condenses the fundamental science of MBE into a modern reference, speeding up literature review - Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research - Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community
Author:
Publisher:
ISBN:
Category : Chemistry
Languages : en
Pages : 2540
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Author: University of Illinois at Urbana-Champaign. Office of Engineering Publications
Publisher:
ISBN:
Category : Engineering
Languages : en
Pages : 380
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Author:
Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 980
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Book Description
Author: Stephen J. Pearton
Publisher: CRC Press
ISBN: 1000448428
Category : Science
Languages : en
Pages : 556
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Book Description
Presents views on current developments in heat and mass transfer research related to the modern development of heat exchangers. Devotes special attention to the different modes of heat and mass transfer mechanisms in relation to the new development of heat exchangers design. Dedicates particular attention to the future needs and demands for further development in heat and mass transfer. GaN and related materials are attracting tremendous interest for their applications to high-density optical data storage, blue/green diode lasers and LEDs, high-temperature electronics for high-power microwave applications, electronics for aerospace and automobiles, and stable passivation films for semiconductors. In addition, there is great scientific interest in the nitrides, because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. This series provides a forum for the latest research in this rapidly-changing field, offering readers a basic understanding of new developments in recent research. Series volumes feature a balance between original theoretical and experimental research in basic physics, device physics, novel materials and quantum structures, processing, and systems.
Author: NanoScience & Technology Inst
Publisher: CRC Press
ISBN: 1498721834
Category : Technology & Engineering
Languages : en
Pages : 360
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Book Description
The Cleantech conference, which runs parallel with NSTI's Nanotech, is designed to promote advancements in traditional technologies, emerging technologies, and clean business practices, covering important developments in renewable energy, clean technologies, business and policy, bio-energy, and novel technologies, as well as environme
Author: E. Kasper
Publisher: Springer Science & Business Media
ISBN: 3540263829
Category : Technology & Engineering
Languages : en
Pages : 367
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Book Description
Quantum size effects are becoming increasingly important in microelectronics, as the dimensions of the structures shrink laterally towards 100 nm and vertically towards 10 nm. Advanced device concepts will exploit these effects for integrated circuits with novel or improved properties. Keeping in mind the trend towards systems on chip, this book deals with silicon-based quantum devices and focuses on room-temperature operation. The basic physical principles, materials, technological aspects, and fundamental device operation are discussed in an interdisciplinary manner. It is shown that silicon-germanium (SiGe) heterostructure devices will play a key role in realizing silicon-based quantum electronics.
Author:
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 1224
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Book Description
Author:
Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 2240
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Book Description
