Development of N-channel and P-channel AlGaN/GaN Heterostructure Field Effect Transistors PDF Download
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Languages : en
Pages : 0
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Languages : en
Pages : 0
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Author: Momčilo Pejović
Publisher: BoD – Books on Demand
ISBN: 9535131753
Category : Technology & Engineering
Languages : en
Pages : 194
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In 1959, Atalla and Kahng at Bell Labs produced the first successful field-effect transistor (FET), which had been long anticipated by other researchers by overcoming the "surface states" that blocked electric fields from penetrating into the semiconductor material. Very quickly, they became the fundamental basis of digital electronic circuits. Up to this point, there are more than 20 different types of field-effect transistors that are incorporated in various applications found in everyday's life. Based on this fact, this book was designed to overview some of the concepts regarding FETs that are currently used as well as some concepts that are still being developed.
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Languages : en
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Author: Adi Horn
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Languages : en
Pages : 160
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Category : Chemistry
Languages : en
Pages : 2540
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Author: Bravishma Narayan
Publisher:
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Category : Field-effect transistors
Languages : en
Pages :
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This thesis describes the design, fabrication and characterization of AlGaN/GaN Heterostructure Field E ect Transistors (HFETs) grown by a Metal Organic Chemical Vapor Deposition (MOCVD) on sapphire substrates. The objective of this research is to develop AlGaN/GaN power devices with high breakdown voltage (greater than 1 kV) and low turn-on resistance. Various characteristics such as current drive (Idss), transconductance (gm) and threshold voltage (Vth) have also been measured and the results have been discussed. Two major challenges with the development of high breakdown voltage AlGaN/GaN HFETs in the past have been high material defect density and non-optimized fabrication technologies which gives rise to bu er leakage and surface leakage, respectively. In this thesis, mesa isolation, ohmic and gate metal contacts, and passivation techniques, have been discussed to improve the performance of these power transistors in terms of low contact resistance and low gate leakage. The relationship between breakdown voltage and Rds(ON)A with respect to the gate-drain length (Lgd) is also discussed. First, unit cell devices were designed (two-fingered cells with Wg = 100, 300, 400 m) and characterized, and then they were extended to form large area devices (upto Wg = 40 mm). The design goals were classied into three parts: : - High Breakdown Voltage: This was achieved by designing devices with variations in Lgd,
Author: Stephen J. Pearton
Publisher: CRC Press
ISBN: 9789056996864
Category : Science
Languages : en
Pages : 724
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The first GaN and Related Materials covered topics such as a historical survey of past research, optical electrical and microstructural characterization, theory of defects, bulk crystal growth, and performance of electronic and photonic devices. This new volume updates old research where warranted and explores new areas such as UV detectors, microwave electronics, and Er-doping. This unique follow-up features contributions from leading experts that cover the full spectrum of growth.
Author: Herwig Hahn
Publisher:
ISBN: 9783843919241
Category :
Languages : de
Pages : 182
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Category : Integrated circuits
Languages : en
Pages : 230
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Author: Wei San Tan
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Category :
Languages : en
Pages :
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