Development of Indium Arsenide Nanowire Field-Effect Transistors as Chemical Sensors PDF Download
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Author: Alex Chi-Wei Tseng
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
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Book Description
Chemical sensors based on field-effect transistors were fabricated from hundreds of aligned indium arsenide nanowires which show promise for high performance based on their high electron mobility and charge sensitivity. Sensing responses to analytes in vapour and solution phases were collected from these multi-wire devices via real-time current measurements and parameters extracted from electrical transport characterization. In the vapour phase, a linear response to acetic acid was observed in surface charge densities determined from a model for the sub-threshold behaviour. These responses distinguished between strongly chemisorptive bonding of acetic acid versus weaker bonding of methanol and 2-butanone. In the solution phase, near-Nernstian sensitivity to sodium ions of a crown ether functionalized, fluorosilicone membrane was determined from the threshold voltage and hysteresis in transport characteristics. A Nernst-Planck-Poisson model was investigated to interpret the electro-diffusive processes but did not accurately capture the electric field dependence. Suggestions to address the shortcomings are given.
Author: Alex Chi-Wei Tseng
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
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Book Description
Chemical sensors based on field-effect transistors were fabricated from hundreds of aligned indium arsenide nanowires which show promise for high performance based on their high electron mobility and charge sensitivity. Sensing responses to analytes in vapour and solution phases were collected from these multi-wire devices via real-time current measurements and parameters extracted from electrical transport characterization. In the vapour phase, a linear response to acetic acid was observed in surface charge densities determined from a model for the sub-threshold behaviour. These responses distinguished between strongly chemisorptive bonding of acetic acid versus weaker bonding of methanol and 2-butanone. In the solution phase, near-Nernstian sensitivity to sodium ions of a crown ether functionalized, fluorosilicone membrane was determined from the threshold voltage and hysteresis in transport characteristics. A Nernst-Planck-Poisson model was investigated to interpret the electro-diffusive processes but did not accurately capture the electric field dependence. Suggestions to address the shortcomings are given.
Author: Mengqi Fu
Publisher: Springer
ISBN: 9811334447
Category : Science
Languages : en
Pages : 113
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Book Description
This book explores the impacts of important material parameters on the electrical properties of indium arsenide (InAs) nanowires, which offer a promising channel material for low-power electronic devices due to their small bandgap and high electron mobility. Smaller diameter nanowires are needed in order to scale down electronic devices and improve their performance. However, to date the properties of thin InAs nanowires and their sensitivity to various factors were not known. The book presents the first study of ultrathin InAs nanowires with diameters below 10 nm are studied, for the first time, establishing the channel in field-effect transistors (FETs) and the correlation between nanowire diameter and device performance. Moreover, it develops a novel method for directly correlating the atomic-level structure with the properties of individual nanowires and their device performance. Using this method, the electronic properties of InAs nanowires and the performance of the FETs they are used in are found to change with the crystal phases (wurtzite, zinc-blend or a mix phase), the axis direction and the growth method. These findings deepen our understanding of InAs nanowires and provide a potential way to tailor device performance by controlling the relevant parameters of the nanowires and devices.
Author: Dae Mann Kim
Publisher: Springer Science & Business Media
ISBN: 1461481244
Category : Technology & Engineering
Languages : en
Pages : 292
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Book Description
“Nanowire Field Effect Transistor: Basic Principles and Applications” places an emphasis on the application aspects of nanowire field effect transistors (NWFET). Device physics and electronics are discussed in a compact manner, together with the p-n junction diode and MOSFET, the former as an essential element in NWFET and the latter as a general background of the FET. During this discussion, the photo-diode, solar cell, LED, LD, DRAM, flash EEPROM and sensors are highlighted to pave the way for similar applications of NWFET. Modeling is discussed in close analogy and comparison with MOSFETs. Contributors focus on processing, electrostatic discharge (ESD) and application of NWFET. This includes coverage of solar and memory cells, biological and chemical sensors, displays and atomic scale light emitting diodes. Appropriate for scientists and engineers interested in acquiring a working knowledge of NWFET as well as graduate students specializing in this subject.
Author: Harish Narendar
Publisher:
ISBN:
Category :
Languages : en
Pages : 113
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Book Description
As device dimensions continue to shrink into the nanometer length regime, conventional complementary metal-oxide semiconductor (CMOS) technology will approach its fundamental physical limits. Further miniaturization based on conventional scaling appears neither technically nor economically feasible. New strategies, including the use of novel materials and one-dimensional device concepts, innovative device architectures, and smart integration schemes need to be explored. They are crucial to extending current capabilities and maintaining momentum beyond the end of the technology roadmap. Semiconducting nanowires are an attractive and viable option for channel structures. By virtue of their potential one-dimensionality, such nanoscale structures introduce quantum confinement effects, thus enabling new functionalities and device concepts. In this thesis we study performance limits of Indium Arsenide nanowire Field Effect Transistors (InAs NWFETs) in a Gate All Around (GAA) structure and examine its upper limits of performance. InAs in particular is an attractive candidate for NW-based electronic devices because of its very high electron mobility at room temperature of 30,000 cm2/Vs in comparison to silicon's mobility of 1480 cm2/Vs. The device simulations were carried out using MultiGate Nanowire (Nanowire MG) simulator made available at NanoHUB (www.nanohub.org) by Network for Computational Nanotechnology (NCN). The InAs NWFET was simulated for variations in channel diameter, channel length, oxide thickness and the corresponding Id -- Vg characteristics were analyzed. Short Channel Effects (SCEs) namely Drain Induced Barrier Lowering (DIBL) and threshold voltage roll off were studied. Sub-threshold slope and ON/OFF current variations were analyzed for variations in device dimensions. Finally the device characteristics of Silicon Nanowire Field Effect Transistors (Si NWFETs) were simulated for the same variations in channel diameter, channel length and oxide thickness and a comparative study of the device performance between InAs NWFET and Si NWFET was carried out to assess the effect of varying the channel material system. It was concluded that Silicon NWFET showed higher immunity towards threshold voltage roll off with scaling in channel length and exhibited better sub-threshold slopes for the same device structure in comparison to the InAs NWFET. Also it was observed that Silicon NWFET operated with lower leakage currents compared to InAs NWFET. Overall it was concluded that SiNWFET exhibited higher immunity towards short channel effects while InAs NWFET showed higher drive currents in the order of 0.10x10^(−3) A/ [mu] m compared to 8.4x10^(−6) A/ [mu] m which would translate to higher switching speeds.
Author: Rohit Dhiman
Publisher: CRC Press
ISBN: 1000778061
Category : Technology & Engineering
Languages : en
Pages : 255
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Book Description
The incessant scaling of complementary metal-oxide semiconductor (CMOS) technology has resulted in significant performance improvements in very-large-scale integration (VLSI) design techniques and system architectures. This trend is expected to continue in the future, but this requires breakthroughs in the design of nano-CMOS and post-CMOS technologies. Nanoelectronics refers to the possible future technologies beyond conventional CMOS scaling limits. This volume addresses the current state-of-the-art nanoelectronic technologies and presents potential options for next-generation integrated circuits. Nanoelectronics for Next-generation Integrated Circuits is a useful reference guide for researchers, engineers, and advanced students working on the frontier of the design and modeling of nanoelectronic devices and their integration aspects with future CMOS circuits. This comprehensive volume eloquently presents the design methodologies for spintronics memories, quantum-dot cellular automata, and post-CMOS FETs, including applications in emerging integrated circuit technologies.
Author: Jianye Li
Publisher: Bentham Science Publishers
ISBN: 1608050521
Category : Technology & Engineering
Languages : en
Pages : 186
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"Semiconductor nanowires exhibit novel electronic and optical properties due to their unique one-dimensional structure and quantum confinement effects. In particular, III-V semiconductor nanowires have been of great scientific and technological interest fo"
Author: D. Wake
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Languages : en
Pages : 0
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Languages : en
Pages : 152
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Author: Mathias Wipf
Publisher:
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Category :
Languages : en
Pages : 122
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