Development of a Fabrication Process for InP/InGaAs Based Heterojunction Bipolar Transistors PDF Download
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Author: Matthew Jon Soucek
Publisher:
ISBN:
Category :
Languages : en
Pages : 364
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Author: Matthew Jon Soucek
Publisher:
ISBN:
Category :
Languages : en
Pages : 364
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Author: Osamu Wada
Publisher: Wiley-Interscience
ISBN:
Category : Science
Languages : en
Pages : 616
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Book Description
A comprehensive guide to current techniques, applications, and trends in InP-based technologies. Introducing one of the hottest technologies in the semiconductor industry, this collection of articles by international leading experts covers the state of the art of indium phosphide (InP)-based materials and devices. From current industry practices to cutting-edge developments to promising research trends, each chapter describes a particular aspect of the technology, giving scientists and engineers the necessary information, including physical principles and technical know-how, to design, apply, and troubleshoot these high-performance, low-cost components for diverse systems-TDM and WDM optical systems or microwave and millimeter-wave systems. The advantages and challenges still to overcome of InP-based semiconductors as compared with the more mature GaAs technology are also thoroughly reviewed. Presented in an easy-to-understand tutorial style, with topics cross-referenced between chapters, InP-Based Materials and Devices features more than 1,500 references as well as 365 figures and tables. Key topics include: * Basic materials physics involved in a wide range of InP-based compounds. * Growth of high-purity bulk and heterostructure epitaxy, including MOCVD, MBE, and GS-MBE. * Hetero-interface control and dry process techniques for device fabrication. * High-performance heterojunction-FETs and HEMTs as well as HBTs for high-speed IC and MMIC applications. * Lasers, amplifiers, and modulators as well as photodiodes and receivers for high-speed and WDM networks. * Optoelectronic integration and packing for functional, low-cost modules.
Author: Daniel Timothy Pillow
Publisher:
ISBN:
Category : Bipolar transistors
Languages : en
Pages : 65
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Author: Wai Lee
Publisher:
ISBN:
Category :
Languages : en
Pages : 316
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Author: Hong Yang
Publisher:
ISBN:
Category : Bipolar transistors
Languages : en
Pages : 133
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Author: M. F. Chang
Publisher: World Scientific
ISBN: 9789810220976
Category : Technology & Engineering
Languages : en
Pages : 448
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Book Description
Recent advances in communication, digital signal processing and computational systems demand very high performance electronic circuits. Heterojunction Bipolar Transistors (HBTs) have the potential of providing a more efficient solution to many key system requirements through intrinsic device advantages. This book reviews the present status of GaAs, InP and silicon-based HBT technologies and their applications to digital, analog, microwave and mixed-signal circuits and systems. It represents the first major effort to cover the complete scope of the HBT technology development in the past decade, starting from the fundamental device physics, material growth, device reliability, scaling, processing, modeling to advanced HBT integrated circuit design for various system applications.
Author: Donald James Sawdai
Publisher:
ISBN:
Category :
Languages : en
Pages : 602
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Author: James C. Vlcek
Publisher:
ISBN:
Category :
Languages : en
Pages : 380
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Author: Sung-Jin Ho
Publisher:
ISBN:
Category :
Languages : en
Pages : 170
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Author: Suman Datta
Publisher:
ISBN:
Category :
Languages : en
Pages : 552
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