Author: Maria Alexandrova
Publisher:
ISBN:
Category :
Languages : en
Pages :

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Author: Benjamin Chu-Kung
Publisher:
ISBN:
Category :
Languages : en
Pages : 56

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Author: Wei Quan
Publisher:
ISBN:
Category :
Languages : en
Pages :

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Author: Nick Gengming Tao
Publisher:
ISBN:
Category : Bipolar transisitors
Languages : en
Pages : 318

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In recent years, GaAsSb/InP double heterojunction bipolar transistors (DHBTs) have been demonstrated to be promising alternatives to InP/InGaAs HBTs, for next generation microwave/millimeter wave applications and optoelectronic integrated circuits (OEICs). However, GaAsSb-based DHBTs featuring the novel base material and type-II band alignment have not been well studied. This thesis investigated type-II GaAsSb DHBTs in the following aspects: periphery surface recombination current, Kirk effect, two dimensional (2D) simulation and device optimization. The present work provided insights into device operation, and guidances for further device development. A series of physical models and parameters was implemented in 2D device simulations using ISE TCAD. Band gap narrowing (BGN) in the bases was characterized by comparing experimental and simulated results. Excellent agreements between the measured and simulated DC and RF results were achieved. Emitter size effects associated with the surface recombination current were experimentally characterized for emitter sizes of 0.5 by 6 to 80 by 80 square micrometer. The 2D simulations by implementing surface state models revealed the mechanism for the surface recombination current. Two device structures were proposed to diminish surface recombination current. Numerical simulations for type-II GaAsSb-InP base-collector (BC) junctions showed that conventional base "push-out" does not occur at high injection levels, and instead the electric field at the BC junction is reversed and an electron barrier at the base side evolves. The electron barrier was found to play an important role in the Kirk effect, and the electron tunnelling through the barrier delays the onset of the Kirk effect. This novel mechanism was supported by the measurement for GaAsSb/InP DHBTs with two base doping levels. The study also showed that the magnitude of the electric field at the BC junction at zero collector current directly affects onset of the Kirk effect. Finally, optimizations for the emitter, base and collector were carried out through 2D simulations. A thin InAlAs emitter, an (Al)GaAsSb compositionally graded base with band gap variance of 0.1eV, and a high n-type delta doping in the collector were proposed to simultaneously achieve high frequency performance, high Kirk current density and high breakdown voltage.

Author: Urs Hammer
Publisher:
ISBN: 9783866283015
Category : Bipolar transistors
Languages : en
Pages : 265

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Author: Martin W. Dvorak
Publisher:
ISBN:
Category : Bipolar transistors
Languages : en
Pages : 356

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Author: Steven Sontung Bui
Publisher:
ISBN:
Category :
Languages : en
Pages : 128

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Author: Rickard Lövblom
Publisher:
ISBN:
Category :
Languages : en
Pages :

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Author: M F Chang
Publisher: World Scientific
ISBN: 9814501069
Category : Technology & Engineering
Languages : en
Pages : 437

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Recent advances in communication, digital signal processing and computational systems demand very high performance electronic circuits. Heterojunction Bipolar Transistors (HBTs) have the potential of providing a more efficient solution to many key system requirements through intrinsic device advantages. This book reviews the present status of GaAs, InP and silicon-based HBT technologies and their applications to digital, analog, microwave and mixed-signal circuits and systems. It represents the first major effort to cover the complete scope of the HBT technology development in the past decade, starting from the fundamental device physics, material growth, device reliability, scaling, processing, modeling to advanced HBT integrated circuit design for various system applications.

Author: Tomas Krämer
Publisher:
ISBN: 9783869553931
Category :
Languages : en
Pages : 131

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