Developing Physics-based Models for 4H-SiC High Voltage Power Switches - MOSFET, IGBT and GTO PDF Download
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Author: Meng-Chia Lee
Publisher:
ISBN:
Category :
Languages : en
Pages : 148
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Book Description
Author: Meng-Chia Lee
Publisher:
ISBN:
Category :
Languages : en
Pages : 148
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Book Description
Author: Lei Lin
Publisher:
ISBN:
Category : Electronics
Languages : en
Pages : 106
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Book Description
Author: Massimo Rudan
Publisher: Springer Nature
ISBN: 3030798275
Category : Technology & Engineering
Languages : en
Pages : 1680
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Book Description
This Springer Handbook comprehensively covers the topic of semiconductor devices, embracing all aspects from theoretical background to fabrication, modeling, and applications. Nearly 100 leading scientists from industry and academia were selected to write the handbook's chapters, which were conceived for professionals and practitioners, material scientists, physicists and electrical engineers working at universities, industrial R&D, and manufacturers. Starting from the description of the relevant technological aspects and fabrication steps, the handbook proceeds with a section fully devoted to the main conventional semiconductor devices like, e.g., bipolar transistors and MOS capacitors and transistors, used in the production of the standard integrated circuits, and the corresponding physical models. In the subsequent chapters, the scaling issues of the semiconductor-device technology are addressed, followed by the description of novel concept-based semiconductor devices. The last section illustrates the numerical simulation methods ranging from the fabrication processes to the device performances. Each chapter is self-contained, and refers to related topics treated in other chapters when necessary, so that the reader interested in a specific subject can easily identify a personal reading path through the vast contents of the handbook.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 441
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Book Description
In this work we developed the technology for 20 kV insulated gate bipolar transistors (IGBTs) in 4H-SiC. The p-channel IGBT is formed on a 175-micron p-type epilayer on an n+ substrate. The n-IGBT is formed on the C-face of a 200-micron n-type free-standing epilayer. When operated at 300 W/cm2, the p- and n-IGBTs carry 30 and 27 A/cm2 respectively, independent of temperature from 23 deg C to 175 deg C. These results were made possible by advances in epigrowth of thick SiC epilayers with low doping, high carrier lifetime, and minimal basal plane dislocations. Ambipolar lifetimes as high as 1.7 microns and BPD densities as low as 2.6 cm-2 were achieved. The work was further supported by research on the MOS interface on both C-face and Si-face SiC, including studies of threshold voltage and long-term reliability. Oxides on the C-face have comparable mobility to those on the Si-face, but lower breakdown fields and reduced long-term reliability.
Author:
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 578
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Book Description
Author: Wladyslaw Grabinski
Publisher: Springer Science & Business Media
ISBN: 9048130468
Category : Technology & Engineering
Languages : en
Pages : 210
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Book Description
Semiconductor power electronics plays a dominant role due its increased efficiency and high reliability in various domains including the medium and high electrical drives, automotive and aircraft applications, electrical power conversion, etc. Power/HVMOS Devices Compact Modeling will cover very extensive range of topics related to the development and characterization power/high voltage (HV) semiconductor technologies as well as modeling and simulations of the power/HV devices and smart power integrated circuits (ICs). Emphasis is placed on the practical applications of the advanced semiconductor technologies and the device level compact/spice modeling. This book is intended to provide reference information by selected, leading authorities in their domain of expertise. They are representing both academia and industry. All of them have been chosen because of their intimate knowledge of their subjects as well as their ability to present them in an easily understandable manner.
Author:
Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 2240
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Book Description
Author: B. Jayant Baliga
Publisher: World Scientific
ISBN: 9812774521
Category : Technology & Engineering
Languages : en
Pages : 526
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Book Description
Power semiconductor devices are widely used for the control and management of electrical energy. The improving performance of power devices has enabled cost reductions and efficiency increases resulting in lower fossil fuel usage and less environmental pollution. This book provides the first cohesive treatment of the physics and design of silicon carbide power devices with an emphasis on unipolar structures. It uses the results of extensive numerical simulations to elucidate the operating principles of these important devices. Sample Chapter(s). Chapter 1: Introduction (72 KB). Contents: Material Properties and Technology; Breakdown Voltage; PiN Rectifiers; Schottky Rectifiers; Shielded Schottky Rectifiers; Metal-Semiconductor Field Effect Transistors; The Baliga-Pair Configuration; Planar Power MOSFETs; Shielded Planar MOSFETs; Trench-Gate Power MOSFETs; Shielded Trendch-Gate MOSFETs; Charge Coupled Structures; Integral Diodes; Lateral High Voltage FETs; Synopsis. Readership: For practising engineers working on power devices, and as a supplementary textbook for a graduate level course on power devices.
Author: Matteo Meneghini
Publisher: Springer
ISBN: 3319431994
Category : Technology & Engineering
Languages : en
Pages : 383
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Book Description
This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.
Author: Vinod Kumar Khanna
Publisher: John Wiley & Sons
ISBN: 047166099X
Category : Technology & Engineering
Languages : en
Pages : 648
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Book Description
A comprehensive and "state-of-the-art" coverage of the design and fabrication of IGBT. All-in-one resource Explains the fundamentals of MOS and bipolar physics. Covers IGBT operation, device and process design, power modules, and new IGBT structures.
