Design of Variation-tolerant Circuits for Nanometer CMOS Technology PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download Design of Variation-tolerant Circuits for Nanometer CMOS Technology PDF full book. Access full book title Design of Variation-tolerant Circuits for Nanometer CMOS Technology by Mohamed Hassan Abu-Rahma. Download full books in PDF and EPUB format.
Author: Mohamed Hassan Abu-Rahma
Publisher:
ISBN:
Category :
Languages : en
Pages : 156
Get Book Here
Book Description
Aggressive scaling of CMOS technology in sub-90nm nodes has created huge challenges. Variations due to fundamental physical limits, such as random dopants fluctuation (RDF) and line edge roughness (LER) are increasing significantly with technology scaling. In addition, manufacturing tolerances in process technology are not scaling at the same pace as transistor's channel length due to process control limitations (e.g., sub-wavelength lithography). Therefore, within-die process variations worsen with successive technology generations. These variations have a strong impact on the maximum clock frequency and leakage power for any digital circuit, and can also result in functional yield losses in variation-sensitive digital circuits (such as SRAM). Moreover, in nanometer technologies, digital circuits show an increased sensitivity to process variations due to low-voltage operation requirements, which are aggravated by the strong demand for lower power consumption and cost while achieving higher performance and density. It is therefore not surprising that the International Technology Roadmap for Semiconductors (ITRS) lists variability as one of the most challenging obstacles for IC design in nanometer regime. To facilitate variation-tolerant design, we study the impact of random variations on the delay variability of a logic gate and derive simple and scalable statistical models to evaluate delay variations in the presence of within-die variations. This work provides new design insight and highlights the importance of accounting for the effect of input slew on delay variations, especially at lower supply voltages.
Author: Mohamed Hassan Abu-Rahma
Publisher:
ISBN:
Category :
Languages : en
Pages : 156
Get Book Here
Book Description
Aggressive scaling of CMOS technology in sub-90nm nodes has created huge challenges. Variations due to fundamental physical limits, such as random dopants fluctuation (RDF) and line edge roughness (LER) are increasing significantly with technology scaling. In addition, manufacturing tolerances in process technology are not scaling at the same pace as transistor's channel length due to process control limitations (e.g., sub-wavelength lithography). Therefore, within-die process variations worsen with successive technology generations. These variations have a strong impact on the maximum clock frequency and leakage power for any digital circuit, and can also result in functional yield losses in variation-sensitive digital circuits (such as SRAM). Moreover, in nanometer technologies, digital circuits show an increased sensitivity to process variations due to low-voltage operation requirements, which are aggravated by the strong demand for lower power consumption and cost while achieving higher performance and density. It is therefore not surprising that the International Technology Roadmap for Semiconductors (ITRS) lists variability as one of the most challenging obstacles for IC design in nanometer regime. To facilitate variation-tolerant design, we study the impact of random variations on the delay variability of a logic gate and derive simple and scalable statistical models to evaluate delay variations in the presence of within-die variations. This work provides new design insight and highlights the importance of accounting for the effect of input slew on delay variations, especially at lower supply voltages.
Author: Swarup Bhunia
Publisher: Springer Science & Business Media
ISBN: 1441974180
Category : Technology & Engineering
Languages : en
Pages : 444
Get Book Here
Book Description
Design considerations for low-power operations and robustness with respect to variations typically impose contradictory requirements. Low-power design techniques such as voltage scaling, dual-threshold assignment and gate sizing can have large negative impact on parametric yield under process variations. This book focuses on circuit/architectural design techniques for achieving low power operation under parameter variations. We consider both logic and memory design aspects and cover modeling and analysis, as well as design methodology to achieve simultaneously low power and variation tolerance, while minimizing design overhead. This book will discuss current industrial practices and emerging challenges at future technology nodes.
Author: Mohamed Abu Rahma
Publisher: Springer Science & Business Media
ISBN: 1461417481
Category : Technology & Engineering
Languages : en
Pages : 176
Get Book Here
Book Description
Variability is one of the most challenging obstacles for IC design in the nanometer regime. In nanometer technologies, SRAM show an increased sensitivity to process variations due to low-voltage operation requirements, which are aggravated by the strong demand for lower power consumption and cost, while achieving higher performance and density. With the drastic increase in memory densities, lower supply voltages, and higher variations, statistical simulation methodologies become imperative to estimate memory yield and optimize performance and power. This book is an invaluable reference on robust SRAM circuits and statistical design methodologies for researchers and practicing engineers in the field of memory design. It combines state of the art circuit techniques and statistical methodologies to optimize SRAM performance and yield in nanometer technologies. Provides comprehensive review of state-of-the-art, variation-tolerant SRAM circuit techniques; Discusses Impact of device related process variations and how they affect circuit and system performance, from a design point of view; Helps designers optimize memory yield, with practical statistical design methodologies and yield estimation techniques.
Author: Swarup Bhunia
Publisher:
ISBN: 9781441974198
Category :
Languages : en
Pages : 458
Get Book Here
Book Description
Author: Mohamed Atef
Publisher: Springer
ISBN: 3319273388
Category : Technology & Engineering
Languages : en
Pages : 253
Get Book Here
Book Description
This book describes the newest implementations of integrated photodiodes fabricated in nanometer standard CMOS technologies. It also includes the required fundamentals, the state-of-the-art, and the design of high-performance laser drivers, transimpedance amplifiers, equalizers, and limiting amplifiers fabricated in nanometer CMOS technologies. This book shows the newest results for the performance of integrated optical receivers, laser drivers, modulator drivers and optical sensors in nanometer standard CMOS technologies. Nanometer CMOS technologies rapidly advanced, enabling the implementation of integrated optical receivers for high data rates of several Giga-bits per second and of high-pixel count optical imagers and sensors. In particular, low cost silicon CMOS optoelectronic integrated circuits became very attractive because they can be extensively applied to short-distance optical communications, such as local area network, chip-to-chip and board-to-board interconnects as well as to imaging and medical sensors.
Author: Ethiopia Enideg Nigussie
Publisher: Springer Science & Business Media
ISBN: 1461401313
Category : Technology & Engineering
Languages : en
Pages : 177
Get Book Here
Book Description
This book presents design techniques, analysis and implementation of high performance and power efficient, variation tolerant on-chip interconnects. Given the design paradigm shift to multi-core, interconnect-centric designs and the increase in sources of variability and their impact in sub-100nm technologies, this book will be an invaluable reference for anyone concerned with the design of next generation, high-performance electronics systems.
Author: Massimo Alioto
Publisher: Springer
ISBN: 331901997X
Category : Technology & Engineering
Languages : en
Pages : 268
Get Book Here
Book Description
This book provides a unified treatment of Flip-Flop design and selection in nanometer CMOS VLSI systems. The design aspects related to the energy-delay tradeoff in Flip-Flops are discussed, including their energy-optimal selection according to the targeted application, and the detailed circuit design in nanometer CMOS VLSI systems. Design strategies are derived in a coherent framework that includes explicitly nanometer effects, including leakage, layout parasitics and process/voltage/temperature variations, as main advances over the existing body of work in the field. The related design tradeoffs are explored in a wide range of applications and the related energy-performance targets. A wide range of existing and recently proposed Flip-Flop topologies are discussed. Theoretical foundations are provided to set the stage for the derivation of design guidelines, and emphasis is given on practical aspects and consequences of the presented results. Analytical models and derivations are introduced when needed to gain an insight into the inter-dependence of design parameters under practical constraints. This book serves as a valuable reference for practicing engineers working in the VLSI design area, and as text book for senior undergraduate, graduate and postgraduate students (already familiar with digital circuits and timing).
Author: Harry J.M. Veendrick
Publisher: Springer
ISBN: 3319475975
Category : Technology & Engineering
Languages : en
Pages : 639
Get Book Here
Book Description
This textbook provides a comprehensive, fully-updated introduction to the essentials of nanometer CMOS integrated circuits. It includes aspects of scaling to even beyond 12nm CMOS technologies and designs. It clearly describes the fundamental CMOS operating principles and presents substantial insight into the various aspects of design implementation and application. Coverage includes all associated disciplines of nanometer CMOS ICs, including physics, lithography, technology, design, memories, VLSI, power consumption, variability, reliability and signal integrity, testing, yield, failure analysis, packaging, scaling trends and road blocks. The text is based upon in-house Philips, NXP Semiconductors, Applied Materials, ASML, IMEC, ST-Ericsson, TSMC, etc., courseware, which, to date, has been completed by more than 4500 engineers working in a large variety of related disciplines: architecture, design, test, fabrication process, packaging, failure analysis and software.
Author: Siva G. Narendra
Publisher: Springer Science & Business Media
ISBN: 9780387281339
Category : Technology & Engineering
Languages : en
Pages : 308
Get Book Here
Book Description
Covers in detail promising solutions at the device, circuit, and architecture levels of abstraction after first explaining the sensitivity of the various MOS leakage sources to these conditions from the first principles. Also treated are the resulting effects so the reader understands the effectiveness of leakage power reduction solutions under these different conditions. Case studies supply real-world examples that reap the benefits of leakage power reduction solutions as the book highlights different device design choices that exist to mitigate increases in the leakage components as technology scales.
Author: Elie Maricau
Publisher: Springer Science & Business Media
ISBN: 1461461634
Category : Technology & Engineering
Languages : en
Pages : 208
Get Book Here
Book Description
This book focuses on modeling, simulation and analysis of analog circuit aging. First, all important nanometer CMOS physical effects resulting in circuit unreliability are reviewed. Then, transistor aging compact models for circuit simulation are discussed and several methods for efficient circuit reliability simulation are explained and compared. Ultimately, the impact of transistor aging on analog circuits is studied. Aging-resilient and aging-immune circuits are identified and the impact of technology scaling is discussed. The models and simulation techniques described in the book are intended as an aid for device engineers, circuit designers and the EDA community to understand and to mitigate the impact of aging effects on nanometer CMOS ICs.
